Aluminium gallium arsenide (also gallium aluminium arsenide ) ( Al x Ga 1−x As ) is a semiconductor material with very nearly the same lattice constant as GaAs , but a larger bandgap . The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs .
3-622: The chemical formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio. The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the bandgap is direct . The refractive index is related with the bandgap via the Kramers–Kronig relations and varies between 2.9 (x = 1) and 3.5 (x = 0). This allows the construction of Bragg mirrors used in VCSELs , RCLEDs , and substrate-transferred crystalline coatings. Aluminium gallium arsenide
6-487: Is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium gallium arsenide sources (such as trimethylgallium and arsine ) and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review. Electron volt Too Many Requests If you report this error to the Wikimedia System Administrators, please include
9-521: Is used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a gallium arsenide region. An example of such a device is a quantum well infrared photodetector ( QWIP ). It is commonly used in GaAs -based red - and near- infra-red -emitting (700–1100 nm) double-hetero-structure laser diodes . The toxicology of AlGaAs has not been fully investigated. The dust
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