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116-655: The Modular Server Chassis comes in two versions; the MFSYS25 and MFSYS35. The key difference between these two versions is that the MFSYS25's integrated hard disk drive (HDD) bay accommodates fourteen 2.5" HDDs, while the MFSYS35's integrated HDD bay accommodates six 3.5" HDDs. Both versions have two Main Fan Modules, six Compute Blade bays, five Service Module slots, and up to four power supply units in an N+1 configuration . There are three types of Service Modules used in

232-684: A spindle that holds flat circular disks, called platters , which hold the recorded data. The platters are made from a non-magnetic material, usually aluminum alloy , glass , or ceramic . They are coated with a shallow layer of magnetic material typically 10–20 nm in depth, with an outer layer of carbon for protection. For reference, a standard piece of copy paper is 0.07–0.18 mm (70,000–180,000 nm) thick. The platters in contemporary HDDs are spun at speeds varying from 4200  rpm in energy-efficient portable devices, to 15,000 rpm for high-performance servers. The first HDDs spun at 1,200 rpm and, for many years, 3,600 rpm

348-522: A stepper motor . Early hard disk drives wrote data at some constant bits per second, resulting in all tracks having the same amount of data per track, but modern drives (since the 1990s) use zone bit recording , increasing the write speed from inner to outer zone and thereby storing more data per track in the outer zones. In modern drives, the small size of the magnetic regions creates the danger that their magnetic state might be lost because of thermal effects ⁠ ⁠— thermally induced magnetic instability which

464-416: A "stopgap" technology between PMR and Seagate's intended successor heat-assisted magnetic recording (HAMR). SMR utilises overlapping tracks for increased data density, at the cost of design complexity and lower data access speeds (particularly write speeds and random access 4k speeds). By contrast, HGST (now part of Western Digital ) focused on developing ways to seal helium -filled drives instead of

580-640: A 1024   GB flash chip, with eight stacked 96-layer V-NAND chips and with QLC technology. Flash memory stores information in an array of memory cells made from floating-gate transistors . In single-level cell (SLC) devices, each cell stores only one bit of information. Multi-level cell (MLC) devices, including triple-level cell (TLC) devices, can store more than one bit per cell. The floating gate may be conductive (typically polysilicon in most kinds of flash memory) or non-conductive (as in SONOS flash memory). In flash memory, each memory cell resembles

696-489: A 16   GB flash memory chip that was manufactured with 24 stacked NAND flash chips using a wafer bonding process. Toshiba also used an eight-layer 3D IC for their 32   GB THGBM flash chip in 2008. In 2010, Toshiba used a 16-layer 3D IC for their 128   GB THGBM2 flash chip, which was manufactured with 16 stacked 8   GB chips. In the 2010s, 3D ICs came into widespread commercial use for NAND flash memory in mobile devices . In 2016, Micron and Intel introduced

812-433: A 64   MB NOR flash memory chip. In 2009, Toshiba and SanDisk introduced NAND flash chips with QLC technology storing 4 bits per cell and holding a capacity of 64   Gbit. Samsung Electronics introduced triple-level cell (TLC) technology storing 3-bits per cell, and began mass-producing NAND chips with TLC technology in 2010. Charge trap flash (CTF) technology replaces the polysilicon floating gate, which

928-582: A Field Generation Layer (FGL) and a Spin Injection Layer (SIL), and the FGL produces a magnetic field using spin-polarised electrons originating in the SIL, which is a form of spin torque energy. A typical HDD has two electric motors: a spindle motor that spins the disks and an actuator (motor) that positions the read/write head assembly across the spinning disks. The disk motor has an external rotor attached to

1044-418: A bit cell comprising about 18 magnetic grains (11 by 1.6 grains). Since the mid-2000s, areal density progress has been challenged by a superparamagnetic trilemma involving grain size, grain magnetic strength and ability of the head to write. In order to maintain acceptable signal-to-noise, smaller grains are required; smaller grains may self-reverse ( electrothermal instability ) unless their magnetic strength

1160-489: A breather port, unlike their air-filled counterparts. Other recording technologies are either under research or have been commercially implemented to increase areal density, including Seagate's heat-assisted magnetic recording (HAMR). HAMR requires a different architecture with redesigned media and read/write heads, new lasers, and new near-field optical transducers. HAMR is expected to ship commercially in late 2024, after technical issues delayed its introduction by more than

1276-548: A certain number of faults (NOR flash, as is used for a BIOS  ROM, is expected to be fault-free). Manufacturers try to maximize the amount of usable storage by shrinking the size of the transistors or cells, however the industry can avoid this and achieve higher storage densities per die by using 3D NAND, which stacks cells on top of each other. NAND flash cells are read by analysing their response to various voltages. NAND flash uses tunnel injection for writing and tunnel release for erasing. NAND flash memory forms

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1392-517: A charge-trapping mechanism for NOR flash memory cells. CTF was later commercialized by AMD and Fujitsu in 2002. 3D V-NAND (vertical NAND) technology stacks NAND flash memory cells vertically within a chip using 3D charge trap flash (CTP) technology. 3D V-NAND technology was first announced by Toshiba in 2007, and the first device, with 24 layers, was first commercialized by Samsung Electronics in 2013. 3D integrated circuit (3D IC) technology stacks integrated circuit (IC) chips vertically into

1508-449: A component of the IBM 305 RAMAC system. It was approximately the size of two large refrigerators and stored five million six-bit characters (3.75 megabytes ) on a stack of 52 disks (100 surfaces used). The 350 had a single arm with two read/write heads, one facing up and the other down, that moved both horizontally between a pair of adjacent platters and vertically from one pair of platters to

1624-1087: A decade, from earlier projections as early as 2009. HAMR's planned successor, bit-patterned recording (BPR), has been removed from the roadmaps of Western Digital and Seagate. Western Digital's microwave-assisted magnetic recording (MAMR), also referred to as energy-assisted magnetic recording (EAMR), was sampled in 2020, with the first EAMR drive, the Ultrastar HC550, shipping in late 2020. Two-dimensional magnetic recording (TDMR) and "current perpendicular to plane" giant magnetoresistance (CPP/GMR) heads have appeared in research papers. Some drives have adopted dual independent actuator arms to increase read/write speeds and compete with SSDs. A 3D-actuated vacuum drive (3DHD) concept and 3D magnetic recording have been proposed. Depending upon assumptions on feasibility and timing of these technologies, Seagate forecasts that areal density will grow 20% per year during 2020–2034. The highest-capacity HDDs shipping commercially in 2024 are 32 TB. The capacity of

1740-586: A hard disk drive, as reported by an operating system to the end user, is smaller than the amount stated by the manufacturer for several reasons, e.g. the operating system using some space, use of some space for data redundancy, space use for file system structures. Confusion of decimal prefixes and binary prefixes can also lead to errors. Flash memory Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash , are named for

1856-425: A more typical 10,000 or 100,000 erase cycles, up to 1,000,000 erase cycles. NOR-based flash was the basis of early flash-based removable media; CompactFlash was originally based on it, though later cards moved to less expensive NAND flash. NAND flash has reduced erase and write times, and requires less chip area per cell, thus allowing greater storage density and lower cost per bit than NOR flash. However,

1972-422: A moving actuator arm, which read and write data to the platter surfaces. Data is accessed in a random-access manner, meaning that individual blocks of data can be stored and retrieved in any order. HDDs are a type of non-volatile storage , retaining stored data when powered off. Modern HDDs are typically in the form of a small rectangular box . Hard disk drives were introduced by IBM in 1956, and were

2088-518: A planar charge trap cell into a cylindrical form. As of 2020, 3D NAND flash memories by Micron and Intel instead use floating gates, however, Micron 128 layer and above 3D NAND memories use a conventional charge trap structure, due to the dissolution of the partnership between Micron and Intel. Charge trap 3D NAND flash is thinner than floating gate 3D NAND. In floating gate 3D NAND, the memory cells are completely separated from one another, whereas in charge trap 3D NAND, vertical groups of memory cells share

2204-475: A removable disk module, which included both the disk pack and the head assembly, leaving the actuator motor in the drive upon removal. Later "Winchester" drives abandoned the removable media concept and returned to non-removable platters. In 1974, IBM introduced the swinging arm actuator, made feasible because the Winchester recording heads function well when skewed to the recorded tracks. The simple design of

2320-538: A second set. Variants of the IBM 350 were the IBM 355 , IBM 7300 and IBM 1405 . In 1961, IBM announced, and in 1962 shipped, the IBM ;1301 disk storage unit, which superseded the IBM 350 and similar drives. The 1301 consisted of one (for Model 1) or two (for model 2) modules, each containing 25 platters, each platter about 1 ⁄ 8 -inch (3.2 mm) thick and 24 inches (610 mm) in diameter. While

2436-463: A separate flash memory controller chip. The NAND type is found mainly in memory cards , USB flash drives , solid-state drives (those produced since 2009), feature phones , smartphones , and similar products, for general storage and transfer of data. NAND or NOR flash memory is also often used to store configuration data in digital products, a task previously made possible by EEPROM or battery-powered static RAM . A key disadvantage of flash memory

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2552-421: A separate die inside the package. The origins of flash memory can be traced back to the development of the floating-gate MOSFET (FGMOS) , also known as the floating-gate transistor. The original MOSFET was invented at Bell Labs between 1955 and 1960, after Frosch and Derick discovered surface passivation and used their discovery to create the first planar transistors. Dawon Kahng went on to develop

2668-489: A single 3D IC chip package. Toshiba introduced 3D IC technology to NAND flash memory in April 2007, when they debuted a 16   GB eMMC compliant (product number THGAM0G7D8DBAI6, often abbreviated THGAM on consumer websites) embedded NAND flash memory chip, which was manufactured with eight stacked 2   GB NAND flash chips. In September 2007, Hynix Semiconductor (now SK Hynix ) introduced 24-layer 3D IC technology, with

2784-424: A single memory product. A single-level NOR flash cell in its default state is logically equivalent to a binary "1" value, because current will flow through the channel under application of an appropriate voltage to the control gate, so that the bitline voltage is pulled down. A NOR flash cell can be programmed, or set to a binary "0" value, by the following procedure: To erase a NOR flash cell (resetting it to

2900-409: A single supply voltage and produce the high voltages that are required using on-chip charge pumps . Over half the energy used by a 1.8 V-NAND flash chip is lost in the charge pump itself. Since boost converters are inherently more efficient than charge pumps, researchers developing low-power SSDs have proposed returning to the dual Vcc/Vpp supply voltages used on all early flash chips, driving

3016-488: A standard metal–oxide–semiconductor field-effect transistor (MOSFET) except that the transistor has two gates instead of one. The cells can be seen as an electrical switch in which current flows between two terminals (source and drain) and is controlled by a floating gate (FG) and a control gate (CG). The CG is similar to the gate in other MOS transistors, but below this, there is the FG insulated all around by an oxide layer. The FG

3132-616: A swing arm drive, the IBM 0680 (Piccolo), with eight inch platters, exploring the possibility that smaller platters might offer advantages. Other eight inch drives followed, then 5 + 1 ⁄ 4  in (130 mm) drives, sized to replace the contemporary floppy disk drives . The latter were primarily intended for the then fledgling personal computer (PC) market. Over time, as recording densities were greatly increased, further reductions in disk diameter to 3.5" and 2.5" were found to be optimum. Powerful rare earth magnet materials became affordable during this period, and were complementary to

3248-482: A technology known as CMOS Under the Array/CMOS Under Array (CUA), Core over Periphery (COP), Periphery Under Cell (PUA), or Xtacking, in which the control circuitry for the flash memory is placed under or above the flash memory cell array. This has allowed for an increase in the number of planes or sections a flash memory chip has, increasing from 2 planes to 4, without increasing the area dedicated to

3364-423: A thin film of ferromagnetic material on both sides of a disk. Sequential changes in the direction of magnetization represent binary data bits . The data is read from the disk by detecting the transitions in magnetization. User data is encoded using an encoding scheme, such as run-length limited encoding, which determines how the data is represented by the magnetic transitions. A typical HDD design consists of

3480-843: A time. NAND flash also uses floating-gate transistors , but they are connected in a way that resembles a NAND gate : several transistors are connected in series, and the bit line is pulled low only if all the word lines are pulled high (above the transistors' V T ). These groups are then connected via some additional transistors to a NOR-style bit line array in the same way that single transistors are linked in NOR ;flash. Compared to NOR flash, replacing single transistors with serial-linked groups adds an extra level of addressing. Whereas NOR flash might address memory by page then word, NAND flash might address it by page, word and bit. Bit-level addressing suits bit-serial applications (such as hard disk emulation), which access only one bit at

3596-453: A time. Execute-in-place applications, on the other hand, require every bit in a word to be accessed simultaneously. This requires word-level addressing. In any case, both bit and word addressing modes are possible with either NOR or NAND flash. To read data, first the desired group is selected (in the same way that a single transistor is selected from a NOR array). Next, most of the word lines are pulled up above V T2 , while one of them

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3712-499: A tiny fraction of the detected errors end up as not correctable. Examples of specified uncorrected bit read error rates include: Within a given manufacturers model the uncorrected bit error rate is typically the same regardless of capacity of the drive. The worst type of errors are silent data corruptions which are errors undetected by the disk firmware or the host operating system; some of these errors may be caused by hard disk drive malfunctions while others originate elsewhere in

3828-506: A type of flash memory with a charge trap method. In 1998, Boaz Eitan of Saifun Semiconductors (later acquired by Spansion ) patented a flash memory technology named NROM that took advantage of a charge trapping layer to replace the conventional floating gate used in conventional flash memory designs. In 2000, an Advanced Micro Devices (AMD) research team led by Richard M. Fastow, Egyptian engineer Khaled Z. Ahmed and Jordanian engineer Sameer Haddad (who later joined Spansion) demonstrated

3944-450: A variation, the floating-gate MOSFET, with Taiwanese-American engineer Simon Min Sze at Bell Labs in 1967. They proposed that it could be used as floating-gate memory cells for storing a form of programmable read-only memory ( PROM ) that is both non-volatile and re-programmable. Early types of floating-gate memory included EPROM (erasable PROM) and EEPROM (electrically erasable PROM) in

4060-444: Is an electrically insulating tunnel oxide layer between the floating gate and the silicon, so the gate "floats" above the silicon. The oxide keeps the electrons confined to the floating gate. Degradation or wear (and the limited endurance of floating gate Flash memory) occurs due to the extremely high electric field (10 million volts per centimeter) experienced by the oxide. Such high voltage densities can break atomic bonds over time in

4176-446: Is capable of scheduling reads and writes efficiently on the platter surfaces and remapping sectors of the media that have failed. Modern drives make extensive use of error correction codes (ECCs), particularly Reed–Solomon error correction . These techniques store extra bits, determined by mathematical formulas, for each block of data; the extra bits allow many errors to be corrected invisibly. The extra bits themselves take up space on

4292-590: Is commonly known as the " superparamagnetic limit ". To counter this, the platters are coated with two parallel magnetic layers, separated by a three-atom layer of the non-magnetic element ruthenium , and the two layers are magnetized in opposite orientation, thus reinforcing each other. Another technology used to overcome thermal effects to allow greater recording densities is perpendicular recording (PMR), first shipped in 2005, and as of 2007 , used in certain HDDs. Perpendicular recording may be accompanied by changes in

4408-669: Is improving faster than HDDs. NAND has a higher price elasticity of demand than HDDs, and this drives market growth. During the late 2000s and 2010s, the product life cycle of HDDs entered a mature phase, and slowing sales may indicate the onset of the declining phase. The 2011 Thailand floods damaged the manufacturing plants and impacted hard disk drive cost adversely between 2011 and 2013. In 2019, Western Digital closed its last Malaysian HDD factory due to decreasing demand, to focus on SSD production. All three remaining HDD manufacturers have had decreasing demand for their HDDs since 2014. A modern HDD records data by magnetizing

4524-418: Is increased, but known write head materials are unable to generate a strong enough magnetic field sufficient to write the medium in the increasingly smaller space taken by grains. Magnetic storage technologies are being developed to address this trilemma, and compete with flash memory –based solid-state drives (SSDs). In 2013, Seagate introduced shingled magnetic recording (SMR), intended as something of

4640-525: Is interposed between the CG and the MOSFET channel. Because the FG is electrically isolated by its insulating layer, electrons placed on it are trapped. When the FG is charged with electrons, this charge screens the electric field from the CG, thus, increasing the threshold voltage (V T ) of the cell. This means that the V T of the cell can be changed between the uncharged FG threshold voltage (V T1 ) and

4756-556: Is often employed in scenarios where cost-effective, high-capacity storage is crucial, such as in USB drives, memory cards, and solid-state drives ( SSDs ). The primary differentiator lies in their use cases and internal structures. NOR flash is optimal for applications requiring quick access to individual bytes, like in embedded systems for program execution. NAND flash, on the other hand, shines in scenarios demanding cost-effective, high-capacity storage with sequential data access. Flash memory

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4872-636: Is programmed in blocks while EEPROM is programmed in bytes. According to Toshiba, the name "flash" was suggested by Masuoka's colleague, Shōji Ariizumi, because the erasure process of the memory contents reminded him of the flash of a camera . Masuoka and colleagues presented the invention of NOR flash in 1984, and then NAND flash at the IEEE 1987 International Electron Devices Meeting (IEDM) held in San Francisco. Toshiba commercially launched NAND flash memory in 1987. Intel Corporation introduced

4988-422: Is pulled up to V I . The series group will conduct (and pull the bit line low) if the selected bit has not been programmed. Despite the additional transistors, the reduction in ground wires and bit lines allows a denser layout and greater storage capacity per chip. (The ground wires and bit lines are actually much wider than the lines in the diagrams.) In addition, NAND flash is typically permitted to contain

5104-484: Is sandwiched between a blocking gate oxide above and a tunneling oxide below it, with an electrically insulating silicon nitride layer; the silicon nitride layer traps electrons. In theory, CTF is less prone to electron leakage, providing improved data retention. Because CTF replaces the polysilicon with an electrically insulating nitride, it allows for smaller cells and higher endurance (lower degradation or wear). However, electrons can become trapped and accumulate in

5220-460: Is shaped rather like an arrowhead and is made of doubly coated copper magnet wire . The inner layer is insulation, and the outer is thermoplastic, which bonds the coil together after it is wound on a form, making it self-supporting. The portions of the coil along the two sides of the arrowhead (which point to the center of the actuator bearing) then interact with the magnetic field of the fixed magnet. Current flowing radially outward along one side of

5336-588: Is specified in unit prefixes corresponding to powers of 1000: a 1- terabyte (TB) drive has a capacity of 1,000 gigabytes , where 1 gigabyte = 1 000 megabytes = 1 000 000 kilobytes (1 million) = 1 000 000 000 bytes (1 billion). Typically, some of an HDD's capacity is unavailable to the user because it is used by the file system and the computer operating system , and possibly inbuilt redundancy for error correction and recovery. There can be confusion regarding storage capacity, since capacities are stated in decimal gigabytes (powers of 1000) by HDD manufacturers, whereas

5452-543: Is supported only with 8 GB or smaller DIMMs). The diskless nature of the Compute Blades means personnel can quickly swap out a failed unit, and have reassign the failed Compute Blade's volumes to the replacement. This can facilitate increased uptime in a production environment. The integrated SAN consists of the HDD module (which accommodates up to fourteen 2.5" HDDs in the MFSYS25 chassis, and up to six 3.5" HDDs in

5568-510: Is that it can endure only a relatively small number of write cycles in a specific block. NOR flash is known for its direct random access capabilities, making it apt for executing code directly. Its architecture allows for individual byte access, facilitating faster read speeds compared to NAND flash. NAND flash memory operates with a different architecture, relying on a serial access approach. This makes NAND suitable for high-density data storage but less efficient for random access tasks. NAND flash

5684-513: Is thus highly suitable for use in mass-storage devices, such as memory cards and solid-state drives (SSD). For example, SSDs store data using multiple NAND flash memory chips. The first NAND-based removable memory card format was SmartMedia , released in 1995. Many others followed, including MultiMediaCard , Secure Digital , Memory Stick , and xD-Picture Card . A new generation of memory card formats, including RS-MMC , miniSD and microSD , feature extremely small form factors. For example,

5800-485: Is used in computers , PDAs , digital audio players , digital cameras , mobile phones , synthesizers , video games , scientific instrumentation , industrial robotics , and medical electronics . Flash memory has a fast read access time but it is not as fast as static RAM or ROM. In portable devices, it is preferred to use flash memory because of its mechanical shock resistance since mechanical drives are more prone to mechanical damage. Because erase cycles are slow,

5916-579: Is used to manage the Intel Modular Server Chassis' integrated SAN, the other two to four Service Modules, and the Compute Blades. The Storage Control Module supports Intel Matrix RAID , and manages the RAID partitioning of the HDDs in the integrated HDD bay; as well as the creation, assignment, replication and destruction of volumes on the HDDs' partitions. The Ethernet Switch Module is a managed Gigabit Ethernet switch that provides

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6032-645: The Apple Macintosh . Many Macintosh computers made between 1986 and 1998 featured a SCSI port on the back, making external expansion simple. Older compact Macintosh computers did not have user-accessible hard drive bays (indeed, the Macintosh 128K , Macintosh 512K , and Macintosh Plus did not feature a hard drive bay at all), so on those models, external SCSI disks were the only reasonable option for expanding upon any internal storage. HDD improvements have been driven by increasing areal density , listed in

6148-554: The NOR and NAND logic gates . Both use the same cell design, consisting of floating-gate MOSFETs . They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate. Flash memory, a type of floating-gate memory,

6264-572: The Shannon limit and thus provide the highest storage density available. Typical hard disk drives attempt to "remap" the data in a physical sector that is failing to a spare physical sector provided by the drive's "spare sector pool" (also called "reserve pool"), while relying on the ECC to recover stored data while the number of errors in a bad sector is still low enough. The S.M.A.R.T ( Self-Monitoring, Analysis and Reporting Technology ) feature counts

6380-502: The "1" state), a large voltage of the opposite polarity is applied between the CG and source terminal, pulling the electrons off the FG through Fowler–Nordheim tunneling (FN tunneling). This is known as Negative gate source source erase. Newer NOR memories can erase using negative gate channel erase, which biases the wordline on a NOR memory cell block and the P-well of the memory cell block to allow FN tunneling to be carried out, erasing

6496-712: The 1970s. However, early floating-gate memory required engineers to build a memory cell for each bit of data, which proved to be cumbersome, slow, and expensive, restricting floating-gate memory to niche applications in the 1970s, such as military equipment and the earliest experimental mobile phones . Modern EEPROM based on Fowler-Nordheim tunnelling to erase data was invented by Bernward and patented by Siemens in 1974. And further developed between 1976 and 1978 by Eliyahou Harari at Hughes Aircraft Company and George Perlegos and others at Intel. This led to Masuoka's invention of flash memory at Toshiba in 1980. The improvement between EEPROM and flash being that flash

6612-438: The FG is charged. The binary value of the cell is sensed by determining whether there is current flowing through the transistor when V I is asserted on the CG. In a multi-level cell device, which stores more than one bit per cell, the amount of current flow is sensed (rather than simply its presence or absence), in order to determine more precisely the level of charge on the FG. Floating gate MOSFETs are so named because there

6728-477: The HDD, but allow higher recording densities to be employed without causing uncorrectable errors, resulting in much larger storage capacity. For example, a typical 1  TB hard disk with 512-byte sectors provides additional capacity of about 93  GB for the ECC data. In the newest drives, as of 2009 , low-density parity-check codes (LDPC) were supplanting Reed–Solomon; LDPC codes enable performance close to

6844-540: The I/O interface of NAND flash does not provide a random-access external address bus. Rather, data must be read on a block-wise basis, with typical block sizes of hundreds to thousands of bits. This makes NAND flash unsuitable as a drop-in replacement for program ROM, since most microprocessors and microcontrollers require byte-level random access. In this regard, NAND flash is similar to other secondary data storage devices , such as hard disks and optical media , and

6960-481: The IBM GV (Gulliver) drive, invented at IBM's UK Hursley Labs, became IBM's most licensed electro-mechanical invention of all time, the actuator and filtration system being adopted in the 1980s eventually for all HDDs, and still universal nearly 40 years and 10 billion arms later. Like the first removable pack drive, the first "Winchester" drives used platters 14 inches (360 mm) in diameter. In 1978, IBM introduced

7076-739: The Intel Modular Server System; the Storage Control Module, the Ethernet Switch Module, and the Chassis Management Module. An Intel Modular Server Chassis accommodates one Chassis Management Module, up to two Storage Control Modules, and up to two Ethernet Switch Modules. The addition of a second Ethernet Switch Module and/or Storage Control Module permits high availability and load balancing. The Chassis Management Module

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7192-639: The MFSYS35 chassis) and the Storage Control Module(s). Each Compute Blade accesses volumes, which are assigned to it by connecting to the Storage Control Module(s) through its integrated SAS HBA. Hard disk drive A hard disk drive ( HDD ), hard disk , hard drive , or fixed disk is an electro-mechanical data storage device that stores and retrieves digital data using magnetic storage with one or more rigid rapidly rotating platters coated with magnetic material. The platters are paired with magnetic heads , usually arranged on

7308-443: The arrowhead and radially inward on the other produces the tangential force . If the magnetic field were uniform, each side would generate opposing forces that would cancel each other out. Therefore, the surface of the magnet is half north pole and half south pole, with the radial dividing line in the middle, causing the two sides of the coil to see opposite magnetic fields and produce forces that add instead of canceling. Currents along

7424-450: The case of embedded servo, otherwise known as sector servo technology). The servo feedback optimizes the signal-to-noise ratio of the GMR sensors by adjusting the voice coil motor to rotate the arm. A more modern servo system also employs milli and/or micro actuators to more accurately position the read/write heads. The spinning of the disks uses fluid-bearing spindle motors. Modern disk firmware

7540-466: The cell block. Older memories used source erase, in which a high voltage was applied to the source and then electrons from the FG were moved to the source. Modern NOR flash memory chips are divided into erase segments (often called blocks or sectors). The erase operation can be performed only on a block-wise basis; all the cells in an erase segment must be erased together. Programming of NOR cells, however, generally can be performed one byte or word at

7656-502: The cell by increasing the MOSFET's threshold voltage. This, in turn, changes the drain-source current that flows through the transistor for a given gate voltage, which is ultimately used to encode a binary value. The Fowler-Nordheim tunneling effect is reversible, so electrons can be added to or removed from the floating gate, processes traditionally known as writing and erasing. Despite the need for relatively high programming and erasing voltages, virtually all flash chips today require only

7772-402: The cells are logically set to 1. Data can only be programmed in one pass to a page in a block that was erased. The programming process is set one or more cells from 1 to 0. Any cells that have been set to 0 by programming can only be reset to 1 by erasing the entire block. This means that before new data can be programmed into a page that already contains data, the current contents of the page plus

7888-441: The connection between the drive and the host. The rate of areal density advancement was similar to Moore's law (doubling every two years) through 2010: 60% per year during 1988–1996, 100% during 1996–2003 and 30% during 2003–2010. Speaking in 1997, Gordon Moore called the increase "flabbergasting", while observing later that growth cannot continue forever. Price improvement decelerated to −12% per year during 2010–2017, as

8004-584: The control or periphery circuitry. This increases the number of IO operations per flash chip or die, but it also introduces challenges when building capacitors for charge pumps used to write to the flash memory. Some flash dies have as many as 6 planes. As of August 2017, microSD cards with a capacity up to 400 GB (400 billion bytes) are available. The same year, Samsung combined 3D IC chip stacking with its 3D V-NAND and TLC technologies to manufacture its 512   GB KLUFG8R1EM flash memory chip with eight stacked 64-layer V-NAND chips. In 2019, Samsung produced

8120-404: The core of the removable USB storage devices known as USB flash drives , as well as most memory card formats and solid-state drives available today. The hierarchical structure of NAND flash starts at a cell level which establishes strings, then pages, blocks, planes and ultimately a die. A string is a series of connected NAND cells in which the source of one cell is connected to the drain of

8236-449: The disks; the stator windings are fixed in place. Opposite the actuator at the end of the head support arm is the read-write head; thin printed-circuit cables connect the read-write heads to amplifier electronics mounted at the pivot of the actuator. The head support arm is very light, but also stiff; in modern drives, acceleration at the head reaches 550 g . The actuator is a permanent magnet and moving coil motor that swings

8352-522: The dominant secondary storage device for general-purpose computers beginning in the early 1960s. HDDs maintained this position into the modern era of servers and personal computers , though personal computing devices produced in large volume, like mobile phones and tablets , rely on flash memory storage devices. More than 224 companies have produced HDDs historically , though after extensive industry consolidation, most units are manufactured by Seagate , Toshiba , and Western Digital . HDDs dominate

8468-467: The earlier IBM disk drives used only two read/write heads per arm, the 1301 used an array of 48 heads (comb), each array moving horizontally as a single unit, one head per surface used. Cylinder-mode read/write operations were supported, and the heads flew about 250 micro-inches (about 6 μm) above the platter surface. Motion of the head array depended upon a binary adder system of hydraulic actuators which assured repeatable positioning. The 1301 cabinet

8584-497: The first commercial NOR type flash chip in 1988. NOR-based flash has long erase and write times, but provides full address and data buses , allowing random access to any memory location . This makes it a suitable replacement for older read-only memory (ROM) chips, which are used to store program code that rarely needs to be updated, such as a computer's BIOS or the firmware of set-top boxes . Its endurance may be from as little as 100 erase cycles for an on-chip flash memory, to

8700-462: The flash storage device (such as SSD ), the data actually written to the flash memory may be 0011 1100. Vertical NAND (V-NAND) or 3D NAND memory stacks memory cells vertically and uses a charge trap flash architecture. The vertical layers allow larger areal bit densities without requiring smaller individual cells. It is also sold under the trademark BiCS Flash , which is a trademark of Kioxia Corporation (formerly Toshiba Memory Corporation). 3D NAND

8816-418: The floating gate. This is why data retention goes down and the risk of data loss increases with increasing degradation. The silicon oxide in a cell degrades with every erase operation. The degradation increases the amount of negative charge in the cell over time due to trapped electrons in the oxide and negates some of the control gate voltage, this over time also makes erasing the cell slower, so to maintain

8932-443: The growth of areal density slowed. The rate of advancement for areal density slowed to 10% per year during 2010–2016, and there was difficulty in migrating from perpendicular recording to newer technologies. As bit cell size decreases, more data can be put onto a single drive platter. In 2013, a production desktop 3 TB HDD (with four platters) would have had an areal density of about 500 Gbit/in which would have amounted to

9048-416: The heads to the desired position. A metal plate supports a squat neodymium–iron–boron (NIB) high-flux magnet . Beneath this plate is the moving coil, often referred to as the voice coil by analogy to the coil in loudspeakers , which is attached to the actuator hub, and beneath that is a second NIB magnet, mounted on the bottom plate of the motor (some drives have only one magnet). The voice coil itself

9164-435: The high Vpp voltage for all flash chips in an SSD with a single shared external boost converter. In spacecraft and other high-radiation environments, the on-chip charge pump is the first part of the flash chip to fail, although flash memories will continue to work – in read-only mode – at much higher radiation levels. In NOR flash, each cell has one end connected directly to ground, and

9280-415: The higher charged FG threshold voltage (V T2 ) by changing the FG charge. In order to read a value from the cell, an intermediate voltage (V I ) between V T1 and V T2 is applied to the CG. If the channel conducts at V I , the FG must be uncharged (if it were charged, there would not be conduction because V I is less than V T2 ). If the channel does not conduct at the V I , it indicates that

9396-1133: The installed Compute Blades with connectivity to each other and to external Ethernet networks. Two types of Compute Blade can be used, in any combination, in the Intel Modular Server Enclosure; the MFS5000SI and the MFS5520VI. Both Compute Modules are dual-socket systems, which each have an integrated SAS HBA (for accessing volumes on the integrated SAN), an integrated Gigabit Ethernet port, and integrated graphics. The Compute Blades are referred to as "Compute Modules" in Intel literature. The MFS5000SI Compute Blade uses up to two Intel Xeon 5100, 5200, 5300 or 5400 processors; and supports up to 32 GB of RAM, running at either 1066 MHz or 1333 MHz. The MFS5520VI Compute Blade uses up to two Intel Xeon 5500 or 5600 processors; and supports up to 192 GB of RAM running at 800 MHz, 1066 MHz or 1333 MHz (note that 1333 MHz

9512-813: The large block sizes used in flash memory erasing give it a significant speed advantage over non-flash EEPROM when writing large amounts of data. As of 2019, flash memory costs greatly less than byte-programmable EEPROM and had become the dominant memory type wherever a system required a significant amount of non-volatile solid-state storage . EEPROMs, however, are still used in applications that require only small amounts of storage, e.g. in SPD implementations on computer memory modules. Flash memory packages can use die stacking with through-silicon vias and several dozen layers of 3D TLC NAND cells (per die) simultaneously to achieve capacities of up to 1 tebibyte per package using 16 stacked dies and an integrated flash controller as

9628-427: The largest hard drive had a capacity of 15 TB, while the largest capacity SSD had a capacity of 100 TB. As of 2018 , HDDs were forecast to reach 100 TB capacities around 2025, but as of 2019 , the expected pace of improvement was pared back to 50 TB by 2026. Smaller form factors, 1.8-inches and below, were discontinued around 2010. The cost of solid-state storage (NAND), represented by Moore's law ,

9744-444: The magnetization of the material passing immediately under it. In modern drives, there is one head for each magnetic platter surface on the spindle, mounted on a common arm. An actuator arm (or access arm) moves the heads on an arc (roughly radially) across the platters as they spin, allowing each head to access almost the entire surface of the platter as it spins. The arm is moved using a voice coil actuator or, in some older designs,

9860-422: The manufacturing of the read/write heads to increase the strength of the magnetic field created by the heads. In 2004, a higher-density recording media was introduced, consisting of coupled soft and hard magnetic layers. So-called exchange spring media magnetic storage technology, also known as exchange coupled composite media , allows good writability due to the write-assist nature of the soft layer. However,

9976-659: The microSD card has an area of just over 1.5 cm , with a thickness of less than 1 mm. NAND flash has achieved significant levels of memory density as a result of several major technologies that were commercialized during the late 2000s to early 2010s. NOR flash was the most common type of Flash memory sold until 2005, when NAND flash overtook NOR flash in sales. Multi-level cell (MLC) technology stores more than one bit in each memory cell . NEC demonstrated multi-level cell (MLC) technology in 1998, with an 80   Mb flash memory chip storing 2 bits per cell. STMicroelectronics also demonstrated MLC in 2000, with

10092-420: The most commonly used operating systems report capacities in powers of 1024, which results in a smaller number than advertised. Performance is specified as the time required to move the heads to a track or cylinder (average access time), the time it takes for the desired sector to move under the head (average latency , which is a function of the physical rotational speed in revolutions per minute ), and finally,

10208-422: The new data must be copied to a new, erased page. If a suitable erased page is available, the data can be written to it immediately. If no erased page is available, a block must be erased before copying the data to a page in that block. The old page is then marked as invalid and is available for erasing and reuse. This is different from operating system LBA view, for example, if operating system writes 1100 0011 to

10324-414: The next one. Depending on the NAND technology, a string typically consists of 32 to 128 NAND cells. Strings are organised into pages which are then organised into blocks in which each string is connected to a separate line called a bitline. All cells with the same position in the string are connected through the control gates by a wordline. A plane contains a certain number of blocks that are connected through

10440-474: The nitride, leading to degradation. Leakage is exacerbated at high temperatures since electrons become more excited with increasing temperatures. CTF technology however still uses a tunneling oxide and blocking layer which are the weak points of the technology, since they can still be damaged in the usual ways (the tunnel oxide can be degraded due to extremely high electric fields and the blocking layer due to Anode Hot Hole Injection (AHHI). Degradation or wear of

10556-559: The norm in most computer installations and reached capacities of 300 megabytes by the early 1980s. Non-removable HDDs were called "fixed disk" drives. In 1963, IBM introduced the 1302, with twice the track capacity and twice as many tracks per cylinder as the 1301. The 1302 had one (for Model 1) or two (for Model 2) modules, each containing a separate comb for the first 250 tracks and the last 250 tracks. Some high-performance HDDs were manufactured with one head per track, e.g. , Burroughs B-475 in 1964, IBM 2305 in 1970, so that no time

10672-413: The number of bits increases, the number of possible states also increases and thus the cell is less tolerant of adjustments to programming voltages, because there is less space between the voltage levels that define each state in a cell. The process of moving electrons from the control gate and into the floating gate is called Fowler–Nordheim tunneling , and it fundamentally changes the characteristics of

10788-516: The other end connected directly to a bit line. This arrangement is called "NOR flash" because it acts like a NOR gate: when one of the word lines (connected to the cell's CG) is brought high, the corresponding storage transistor acts to pull the output bit line low. NOR flash continues to be the technology of choice for embedded applications requiring a discrete non-volatile memory device. The low read latencies characteristic of NOR devices allow for both direct code execution and data storage in

10904-435: The oxides is the reason why flash memory has limited endurance, and data retention goes down (the potential for data loss increases) with increasing degradation, since the oxides lose their electrically insulating characteristics as they degrade. The oxides must insulate against electrons to prevent them from leaking which would cause data loss. In 1991, NEC researchers including N. Kodama, K. Oyama and Hiroki Shirai described

11020-413: The performance and reliability of the NAND chip, the cell must be retired from use. Endurance also decreases with the number of bits in a cell. With more bits in a cell, the number of possible states (each represented by a different voltage level) in a cell increases and is more sensitive to the voltages used for programming. Voltages may be adjusted to compensate for degradation of the silicon oxide, and as

11136-534: The platters, increasing areal density. Normally hard drive recording heads have a pole called a main pole that is used for writing to the platters, and adjacent to this pole is an air gap and a shield. The write coil of the head surrounds the pole. The STO device is placed in the air gap between the pole and the shield to increase the strength of the magnetic field created by the pole; FC-MAMR technically doesn't use microwaves, but uses technology employed in MAMR. The STO has

11252-459: The relatively thin oxide, gradually degrading its electrically insulating properties and allowing electrons to be trapped in and pass through freely (leak) from the floating gate into the oxide, increasing the likelihood of data loss since the electrons (the quantity of which is used to represent different charge levels, each assigned to a different combination of bits in MLC Flash) are normally in

11368-416: The revenue of hard disk drives as of 2017 . Though SSDs have four to nine times higher cost per bit, they are replacing HDDs in applications where speed, power consumption, small size, high capacity and durability are important. As of 2019 , the cost per bit of SSDs is falling, and the price premium over HDDs has narrowed. The primary characteristics of an HDD are its capacity and performance . Capacity

11484-410: The same bitline. A flash die consists of one or more planes, and the peripheral circuitry that is needed to perform all the read, write, and erase operations. The architecture of NAND flash means that data can be read and programmed (written) in pages, typically between 4 KiB and 16 KiB in size, but can only be erased at the level of entire blocks consisting of multiple pages. When a block is erased, all

11600-407: The same silicon nitride material. An individual memory cell is made up of one planar polysilicon layer containing a hole filled by multiple concentric vertical cylinders. The hole's polysilicon surface acts as the gate electrode. The outermost silicon dioxide cylinder acts as the gate dielectric, enclosing a silicon nitride cylinder that stores charge, in turn enclosing a silicon dioxide cylinder as

11716-427: The speed at which the data is transmitted (data rate). The two most common form factors for modern HDDs are 3.5-inch, for desktop computers, and 2.5-inch, primarily for laptops. HDDs are connected to systems by standard interface cables such as SATA (Serial ATA), USB , SAS ( Serial Attached SCSI ), or PATA (Parallel ATA) cables. The first production IBM hard disk drive, the 350 disk storage , shipped in 1957 as

11832-438: The stack of disk platters when the drive was powered down. Instead, the heads were allowed to "land" on a special area of the disk surface upon spin-down, "taking off" again when the disk was later powered on. This greatly reduced the cost of the head actuator mechanism, but precluded removing just the disks from the drive as was done with the disk packs of the day. Instead, the first models of "Winchester technology" drives featured

11948-450: The swing arm actuator design to make possible the compact form factors of modern HDDs. As the 1980s began, HDDs were a rare and very expensive additional feature in PCs, but by the late 1980s, their cost had been reduced to the point where they were standard on all but the cheapest computers. Most HDDs in the early 1980s were sold to PC end users as an external, add-on subsystem. The subsystem

12064-439: The table above. Applications expanded through the 2000s, from the mainframe computers of the late 1950s to most mass storage applications including computers and consumer applications such as storage of entertainment content. In the 2000s and 2010s, NAND began supplanting HDDs in applications requiring portability or high performance. NAND performance is improving faster than HDDs, and applications for HDDs are eroding. In 2018,

12180-400: The thermal stability is determined only by the hardest layer and not influenced by the soft layer. Flux control MAMR (FC-MAMR) allows a hard drive to have increased recording capacity without the need for new hard disk drive platter materials. MAMR hard drives have a microwave generating spin torque generator (STO) on the read/write heads which allows physically smaller bits to be recorded to

12296-475: The top and bottom of the coil produce radial forces that do not rotate the head. The HDD's electronics controls the movement of the actuator and the rotation of the disk and transfers data to/from a disk controller . Feedback of the drive electronics is accomplished by means of special segments of the disk dedicated to servo feedback. These are either complete concentric circles (in the case of dedicated servo technology) or segments interspersed with real data (in

12412-491: The total number of errors in the entire HDD fixed by ECC (although not on all hard drives as the related S.M.A.R.T attributes "Hardware ECC Recovered" and "Soft ECC Correction" are not consistently supported), and the total number of performed sector remappings, as the occurrence of many such errors may predict an HDD failure . The "No-ID Format", developed by IBM in the mid-1990s, contains information about which sectors are bad and where remapped sectors have been located. Only

12528-418: The tunnel dielectric that surrounds a central rod of conducting polysilicon which acts as the conducting channel. Memory cells in different vertical layers do not interfere with each other, as the charges cannot move vertically through the silicon nitride storage medium, and the electric fields associated with the gates are closely confined within each layer. The vertical collection is electrically identical to

12644-433: The usual filtered air. Since turbulence and friction are reduced, higher areal densities can be achieved due to using a smaller track width, and the energy dissipated due to friction is lower as well, resulting in a lower power draw. Furthermore, more platters can be fit into the same enclosure space, although helium gas is notoriously difficult to prevent escaping. Thus, helium drives are completely sealed and do not have

12760-499: The volume of storage produced ( exabytes per year) for servers. Though production is growing slowly (by exabytes shipped ), sales revenues and unit shipments are declining, because solid-state drives (SSDs) have higher data-transfer rates, higher areal storage density, somewhat better reliability, and much lower latency and access times. The revenues for SSDs, most of which use NAND flash memory , slightly exceeded those for HDDs in 2018. Flash storage products had more than twice

12876-520: Was about the size of three large refrigerators placed side by side, storing the equivalent of about 21 million eight-bit bytes per module. Access time was about a quarter of a second. Also in 1962, IBM introduced the model 1311 disk drive, which was about the size of a washing machine and stored two million characters on a removable disk pack . Users could buy additional packs and interchange them as needed, much like reels of magnetic tape . Later models of removable pack drives, from IBM and others, became

12992-417: Was first announced by Toshiba in 2007. V-NAND was first commercially manufactured by Samsung Electronics in 2013. V-NAND uses a charge trap flash geometry (which was commercially introduced in 2002 by AMD and Fujitsu ) that stores charge on an embedded silicon nitride film. Such a film is more robust against point defects and can be made thicker to hold larger numbers of electrons. V-NAND wraps

13108-616: Was invented by Fujio Masuoka at Toshiba in 1980 and is based on EEPROM technology. Toshiba began marketing flash memory in 1987. EPROMs had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally are much smaller than the entire device. NOR flash memory allows a single machine word to be written – to an erased location – or read independently. A flash memory device typically consists of one or more flash memory chips (each holding many flash memory cells), along with

13224-427: Was lost physically moving the heads to a track and the only latency was the time for the desired block of data to rotate into position under the head. Known as fixed-head or head-per-track disk drives, they were very expensive and are no longer in production. In 1973, IBM introduced a new type of HDD code-named " Winchester ". Its primary distinguishing feature was that the disk heads were not withdrawn completely from

13340-513: Was not sold under the drive manufacturer's name but under the subsystem manufacturer's name such as Corvus Systems and Tallgrass Technologies , or under the PC system manufacturer's name such as the Apple ProFile . The IBM PC/XT in 1983 included an internal 10 MB HDD, and soon thereafter, internal HDDs proliferated on personal computers. External HDDs remained popular for much longer on

13456-408: Was the norm. As of November 2019 , the platters in most consumer-grade HDDs spin at 5,400 or 7,200 rpm. Information is written to and read from a platter as it rotates past devices called read-and-write heads that are positioned to operate very close to the magnetic surface, with their flying height often in the range of tens of nanometers. The read-and-write head is used to detect and modify

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