Mavica ( Magnetic Video Camera ) is a discontinued brand of Sony cameras which use removable disks as the main recording medium. On August 25, 1981, Sony unveiled a prototype of the Sony Mavica as the world's first electronic still video camera .
107-519: As with all Mavica cameras until the early 1990s (including later models sold commercially) this first model was not digital. Its CCD sensor produced an analog video signal in the NTSC format at a resolution of 570 × 490 pixels. Mavipak 2.0" disks (later adopted industry-wide as the Video Floppy and labelled "VF") were used to write 50 still frames onto tracks on disk. The pictures could be shown on
214-423: A charge amplifier , which converts the charge into a voltage . By repeating this process, the controlling circuit converts the entire contents of the array in the semiconductor to a sequence of voltages. In a digital device, these voltages are then sampled, digitized, and usually stored in memory; in an analog device (such as an analog video camera), they are processed into a continuous analog signal (e.g. by feeding
321-429: A depletion layer by forcing the positively charged holes away from the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions (see doping ). If V G is high enough, a high concentration of negative charge carriers forms in an inversion layer located in a thin layer next to the interface between the semiconductor and the insulator. Conventionally,
428-481: A shift register . The essence of the design was the ability to transfer charge along the surface of a semiconductor from one storage capacitor to the next. The concept was similar in principle to the bucket-brigade device (BBD), which was developed at Philips Research Labs during the late 1960s. The first experimental device demonstrating the principle was a row of closely spaced metal squares on an oxidized silicon surface electrically accessed by wire bonds. It
535-485: A CCD is the higher cost: the cell area is basically doubled, and more complex control electronics are needed. An intensified charge-coupled device (ICCD) is a CCD that is optically connected to an image intensifier that is mounted in front of the CCD. An image intensifier includes three functional elements: a photocathode , a micro-channel plate (MCP) and a phosphor screen. These three elements are mounted one close behind
642-405: A MOSFET is that it requires almost no input current to control the load current, when compared to bipolar junction transistors (BJTs). In an enhancement mode MOSFET, voltage applied to the gate terminal increases the conductivity of the device. In depletion mode transistors, voltage applied at the gate reduces the conductivity. The "metal" in the name MOSFET is sometimes a misnomer , because
749-564: A MOSFET. In the case of a p-type MOSFET, bulk inversion happens when the intrinsic energy level at the surface becomes smaller than the Fermi level at the surface. This can be seen on a band diagram. The Fermi level defines the type of semiconductor in discussion. If the Fermi level is equal to the Intrinsic level, the semiconductor is of intrinsic, or pure type. If the Fermi level lies closer to
856-535: A bipolar transistor. The subthreshold I–V curve depends exponentially upon threshold voltage, introducing a strong dependence on any manufacturing variation that affects threshold voltage; for example: variations in oxide thickness, junction depth, or body doping that change the degree of drain-induced barrier lowering. The resulting sensitivity to fabricational variations complicates optimization for leakage and performance. When V GS > V th and V DS < V GS − V th : The transistor
963-404: A buried oxide is formed below a thin semiconductor layer. If the channel region between the gate dielectric and the buried oxide region is very thin, the channel is referred to as an ultrathin channel region with the source and drain regions formed on either side in or above the thin semiconductor layer. Other semiconductor materials may be employed. When the source and drain regions are formed above
1070-669: A cooling system—using either thermoelectric cooling or liquid nitrogen—to cool the chip down to temperatures in the range of −65 to −95 °C (−85 to −139 °F). This cooling system adds additional costs to the EMCCD imaging system and may yield condensation problems in the application. However, high-end EMCCD cameras are equipped with a permanent hermetic vacuum system confining the chip to avoid condensation issues. The low-light capabilities of EMCCDs find use in astronomy and biomedical research, among other fields. In particular, their low noise at high readout speeds makes them very useful for
1177-472: A dedicated Memory Stick slot), and a new CD Mavica series—which used 8 cm (3") CD-R / CD-RW media—was released in 2000. The first CD-based Mavica (MVC-CD1000), notable also for its 10× optical zoom, could only write to CD-R discs, but it was able to use its USB interface to read images from CDs not finalized (CDs with incomplete sessions). Subsequent models are more compact, with a reduced optical zoom, and are able to write to CD-RW discs. A couple of
SECTION 10
#17327869713571284-428: A factor of 2–3 compared to the surface-channel CCD. The gate oxide, i.e. the capacitor dielectric , is grown on top of the epitaxial layer and substrate. Later in the process, polysilicon gates are deposited by chemical vapor deposition , patterned with photolithography , and etched in such a way that the separately phased gates lie perpendicular to the channels. The channels are further defined by utilization of
1391-540: A feature that made them very popular in the North American market. With the evolution of consumer digital camera resolution ( megapixels ), the advent of the USB interface and the rise of high-capacity storage media, Mavicas started to offer other alternatives for recording images: the floppy-disk (FD) Mavicas began to be Memory Stick compatible (initially through a Memory Stick Floppy Disk adapter, but ultimately through
1498-555: A few percent. That image can then be read out slowly from the storage region while a new image is integrating or exposing in the active area. Frame-transfer devices typically do not require a mechanical shutter and were a common architecture for early solid-state broadcast cameras. The downside to the frame-transfer architecture is that it requires twice the silicon real estate of an equivalent full-frame device; hence, it costs roughly twice as much. The interline architecture extends this concept one step further and masks every other column of
1605-429: A full-frame device, all of the image area is active, and there is no electronic shutter. A mechanical shutter must be added to this type of sensor or the image smears as the device is clocked or read out. With a frame-transfer CCD, half of the silicon area is covered by an opaque mask (typically aluminum). The image can be quickly transferred from the image area to the opaque area or storage region with acceptable smear of
1712-592: A gain register is placed between the shift register and the output amplifier. The gain register is split up into a large number of stages. In each stage, the electrons are multiplied by impact ionization in a similar way to an avalanche diode . The gain probability at every stage of the register is small ( P < 2%), but as the number of elements is large (N > 500), the overall gain can be very high ( g = ( 1 + P ) N {\displaystyle g=(1+P)^{N}} ), with single input electrons giving many thousands of output electrons. Reading
1819-401: A large lateral electric field from one gate to the next. This provides an additional driving force to aid in transfer of the charge packets. The CCD image sensors can be implemented in several different architectures. The most common are full-frame, frame-transfer, and interline. The distinguishing characteristic of each of these architectures is their approach to the problem of shuttering. In
1926-476: A long-channel device, there is no drain voltage dependence of the current once V DS ≫ V T {\displaystyle V_{\text{DS}}\gg V_{\text{T}}} , but as channel length is reduced drain-induced barrier lowering introduces drain voltage dependence that depends in a complex way upon the device geometry (for example, the channel doping, the junction doping and so on). Frequently, threshold voltage V th for this mode
2033-399: A non-equilibrium state called deep depletion. Then, when electron–hole pairs are generated in the depletion region, they are separated by the electric field, the electrons move toward the surface, and the holes move toward the substrate. Four pair-generation processes can be identified: The last three processes are known as dark-current generation, and add noise to the image; they can limit
2140-417: A p+ doped region underlying them, providing a further barrier to the electrons in the charge packets (this discussion of the physics of CCD devices assumes an electron transfer device, though hole transfer is possible). The clocking of the gates, alternately high and low, will forward and reverse bias the diode that is provided by the buried channel (n-doped) and the epitaxial layer (p-doped). This will cause
2247-409: A reflective material such as aluminium. When the exposure time is up, the cells are transferred very rapidly to the hidden area. Here, safe from any incoming light, cells can be read out at any speed one deems necessary to correctly measure the cells' charge. At the same time, the exposed part of the CCD is collecting light again, so no delay occurs between successive exposures. The disadvantage of such
SECTION 20
#17327869713572354-445: A signal from a CCD gives a noise background, typically a few electrons. In an EMCCD, this noise is superimposed on many thousands of electrons rather than a single electron; the devices' primary advantage is thus their negligible readout noise. The use of avalanche breakdown for amplification of photo charges had already been described in the U.S. patent 3,761,744 in 1973 by George E. Smith/Bell Telephone Laboratories. EMCCDs show
2461-480: A silicon MOS transistor in 1959 and successfully demonstrated a working MOS device with their Bell Labs team in 1960. Their team included E. E. LaBate and E. I. Povilonis who fabricated the device; M. O. Thurston, L. A. D’Asaro, and J. R. Ligenza who developed the diffusion processes, and H. K. Gummel and R. Lindner who characterized the device. This was a culmination of decades of field-effect research that began with Lilienfeld. The first MOS transistor at Bell Labs
2568-422: A similar sensitivity to intensified CCDs (ICCDs). However, as with ICCDs, the gain that is applied in the gain register is stochastic and the exact gain that has been applied to a pixel's charge is impossible to know. At high gains (> 30), this uncertainty has the same effect on the signal-to-noise ratio (SNR) as halving the quantum efficiency (QE) with respect to operation with a gain of unity. This effect
2675-416: A single slice of the image, whereas a two-dimensional array, used in video and still cameras, captures a two-dimensional picture corresponding to the scene projected onto the focal plane of the sensor. Once the array has been exposed to the image, a control circuit causes each capacitor to transfer its contents to its neighbor (operating as a shift register). The last capacitor in the array dumps its charge into
2782-522: A television screen, using a "special playback viewer unit" plugged into the television set. During the late 1990s and early 2000s, Sony reused the Mavica name for a number of digital (rather than analog) cameras that used standard 3.5" floppy disk or 8 cm CD-R media for storage. The initial prototype demonstrated in 1981 supported video capture at ten pictures per second, and hopes were expressed that this could be increased to sixty pictures per second before
2889-424: A time. During the readout phase, cells are shifted down the entire area of the CCD. While they are shifted, they continue to collect light. Thus, if the shifting is not fast enough, errors can result from light that falls on a cell holding charge during the transfer. These errors are referred to as "vertical smear" and cause a strong light source to create a vertical line above and below its exact location. In addition,
2996-464: A variety of astronomical applications involving low light sources and transient events such as lucky imaging of faint stars, high speed photon counting photometry, Fabry-Pérot spectroscopy and high-resolution spectroscopy. More recently, these types of CCDs have broken into the field of biomedical research in low-light applications including small animal imaging , single-molecule imaging , Raman spectroscopy , super resolution microscopy as well as
3103-448: A wide variety of modern fluorescence microscopy techniques thanks to greater SNR in low-light conditions in comparison with traditional CCDs and ICCDs. MOS capacitor In electronics , the metal–oxide–semiconductor field-effect transistor ( MOSFET , MOS-FET , MOS FET , or MOS transistor ) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon . It has an insulated gate,
3210-410: Is a photoactive region (an epitaxial layer of silicon), and a transmission region made out of a shift register (the CCD, properly speaking). An image is projected through a lens onto the capacitor array (the photoactive region), causing each capacitor to accumulate an electric charge proportional to the light intensity at that location. A one-dimensional array, used in line-scan cameras, captures
3317-432: Is a specialized CCD, often used in astronomy and some professional video cameras , designed for high exposure efficiency and correctness. The normal functioning of a CCD, astronomical or otherwise, can be divided into two phases: exposure and readout. During the first phase, the CCD passively collects incoming photons , storing electrons in its cells. After the exposure time is passed, the cells are read out one line at
Sony Mavica - Misplaced Pages Continue
3424-748: Is a weak-inversion current, sometimes called subthreshold leakage. In weak inversion where the source is tied to bulk, the current varies exponentially with V GS {\displaystyle V_{\text{GS}}} as given approximately by: I D ≈ I D0 e V GS − V th n V T , {\displaystyle I_{\text{D}}\approx I_{\text{D0}}e^{\frac {V_{\text{GS}}-V_{\text{th}}}{nV_{\text{T}}}},} where I D0 {\displaystyle I_{\text{D0}}} = current at V GS = V th {\displaystyle V_{\text{GS}}=V_{\text{th}}} ,
3531-402: Is an integrated circuit containing an array of linked, or coupled, capacitors . Under the control of an external circuit, each capacitor can transfer its electric charge to a neighboring capacitor. CCD sensors are a major technology used in digital imaging . In a CCD image sensor , pixels are represented by p-doped metal–oxide–semiconductor (MOS) capacitors . These MOS capacitors ,
3638-714: Is defined as the gate voltage at which a selected value of current I D0 occurs, for example, I D0 = 1 μA, which may not be the same V th -value used in the equations for the following modes. Some micropower analog circuits are designed to take advantage of subthreshold conduction. By working in the weak-inversion region, the MOSFETs in these circuits deliver the highest possible transconductance-to-current ratio, namely: g m / I D = 1 / ( n V T ) {\displaystyle g_{m}/I_{\text{D}}=1/\left(nV_{\text{T}}\right)} , almost that of
3745-415: Is equivalent to a planar capacitor , with one of the electrodes replaced by a semiconductor. When a voltage is applied across a MOS structure, it modifies the distribution of charges in the semiconductor. If we consider a p-type semiconductor (with N A the density of acceptors , p the density of holes; p = N A in neutral bulk), a positive voltage, V G , from gate to body (see figure) creates
3852-565: Is one of the major advantages of the ICCD over the EMCCD cameras. The highest performing ICCD cameras enable shutter times as short as 200 picoseconds . ICCD cameras are in general somewhat higher in price than EMCCD cameras because they need the expensive image intensifier. On the other hand, EMCCD cameras need a cooling system to cool the EMCCD chip down to temperatures around 170 K (−103 °C ). This cooling system adds additional costs to
3959-564: Is referred to as the Excess Noise Factor (ENF). However, at very low light levels (where the quantum efficiency is most important), it can be assumed that a pixel either contains an electron—or not. This removes the noise associated with the stochastic multiplication at the risk of counting multiple electrons in the same pixel as a single electron. To avoid multiple counts in one pixel due to coincident photons in this mode of operation, high frame rates are essential. The dispersion in
4066-501: Is the charge-carrier effective mobility, W {\displaystyle W} is the gate width, L {\displaystyle L} is the gate length and C ox {\displaystyle C_{\text{ox}}} is the gate oxide capacitance per unit area. The transition from the exponential subthreshold region to the triode region is not as sharp as the equations suggest. When V GS > V th and V DS ≥ (V GS – V th ): The switch
4173-512: Is the probability of getting n output electrons given m input electrons and a total mean multiplication register gain of g . For very large numbers of input electrons, this complex distribution function converges towards a Gaussian. Because of the lower costs and better resolution, EMCCDs are capable of replacing ICCDs in many applications. ICCDs still have the advantage that they can be gated very fast and thus are useful in applications like range-gated imaging . EMCCD cameras indispensably need
4280-422: Is the right choice. Consumer snap-shot cameras have used interline devices. On the other hand, for those applications that require the best possible light collection and issues of money, power and time are less important, the full-frame device is the right choice. Astronomers tend to prefer full-frame devices. The frame-transfer falls in between and was a common choice before the fill-factor issue of interline devices
4387-787: Is turned on, and a channel has been created which allows current between the drain and the source. The MOSFET operates like a resistor, controlled by the gate voltage relative to both the source and drain voltages. The current from drain to source is modeled as: I D = μ n C ox W L ( ( V GS − V t h ) V DS − V DS 2 2 ) {\displaystyle I_{\text{D}}=\mu _{n}C_{\text{ox}}{\frac {W}{L}}\left(\left(V_{\text{GS}}-V_{\rm {th}}\right)V_{\text{DS}}-{\frac {{V_{\text{DS}}}^{2}}{2}}\right)} where μ n {\displaystyle \mu _{n}}
Sony Mavica - Misplaced Pages Continue
4494-427: Is turned on, and a channel has been created, which allows current between the drain and source. Since the drain voltage is higher than the source voltage, the electrons spread out, and conduction is not through a narrow channel but through a broader, two- or three-dimensional current distribution extending away from the interface and deeper in the substrate. The onset of this region is also known as pinch-off to indicate
4601-405: Is used in the construction of interline-transfer devices. Another version of CCD is called a peristaltic CCD. In a peristaltic charge-coupled device, the charge-packet transfer operation is analogous to the peristaltic contraction and dilation of the digestive system . The peristaltic CCD has an additional implant that keeps the charge away from the silicon/ silicon dioxide interface and generates
4708-447: The 45 nanometer node. When a voltage is applied between the gate and the source, the electric field generated penetrates through the oxide and creates an inversion layer or channel at the semiconductor-insulator interface. The inversion layer provides a channel through which current can pass between source and drain terminals. Varying the voltage between the gate and body modulates the conductivity of this layer and thereby controls
4815-681: The Kodak Apparatus Division, invented a digital still camera using this same Fairchild 100 × 100 CCD in 1975. The interline transfer (ILT) CCD device was proposed by L. Walsh and R. Dyck at Fairchild in 1973 to reduce smear and eliminate a mechanical shutter . To further reduce smear from bright light sources, the frame-interline-transfer (FIT) CCD architecture was developed by K. Horii, T. Kuroda and T. Kunii at Matsushita (now Panasonic) in 1981. The first KH-11 KENNEN reconnaissance satellite equipped with charge-coupled device array ( 800 × 800 pixels) technology for imaging
4922-566: The LOCOS process to produce the channel stop region. Channel stops are thermally grown oxides that serve to isolate the charge packets in one column from those in another. These channel stops are produced before the polysilicon gates are, as the LOCOS process utilizes a high-temperature step that would destroy the gate material. The channel stops are parallel to, and exclusive of, the channel, or "charge carrying", regions. Channel stops often have
5029-473: The photodiode to the CCD. This led to their invention of the pinned photodiode, a photodetector structure with low lag, low noise , high quantum efficiency and low dark current . It was first publicly reported by Teranishi and Ishihara with A. Kohono, E. Oda and K. Arai in 1982, with the addition of an anti-blooming structure. The new photodetector structure invented at NEC was given the name "pinned photodiode" (PPD) by B.C. Burkey at Kodak in 1984. In 1987,
5136-399: The CCD cannot be used to collect light while it is being read out. A faster shifting requires a faster readout, and a faster readout can introduce errors in the cell charge measurement, leading to a higher noise level. A frame transfer CCD solves both problems: it has a shielded, not light sensitive, area containing as many cells as the area exposed to light. Typically, this area is covered by
5243-402: The CCD concept. Michael Tompsett was awarded the 2010 National Medal of Technology and Innovation , for pioneering work and electronic technologies including the design and development of the first CCD imagers. He was also awarded the 2012 IEEE Edison Medal for "pioneering contributions to imaging devices including CCD Imagers, cameras and thermal imagers". In a CCD for capturing images, there
5350-545: The CCD to deplete, near the p–n junction and will collect and move the charge packets beneath the gates—and within the channels—of the device. CCD manufacturing and operation can be optimized for different uses. The above process describes a frame transfer CCD. While CCDs may be manufactured on a heavily doped p++ wafer it is also possible to manufacture a device inside p-wells that have been placed on an n-wafer. This second method, reportedly, reduces smear, dark current , and infrared and red response. This method of manufacture
5457-477: The CCD-G5, was released by Sony in 1983, based on a prototype developed by Yoshiaki Hagiwara in 1981. Early CCD sensors suffered from shutter lag . This was largely resolved with the invention of the pinned photodiode (PPD). It was invented by Nobukazu Teranishi , Hiromitsu Shiraki and Yasuo Ishihara at NEC in 1980. They recognized that lag can be eliminated if the signal carriers could be transferred from
SECTION 50
#17327869713575564-404: The EMCCD camera and often yields heavy condensation problems in the application. ICCDs are used in night vision devices and in various scientific applications. An electron-multiplying CCD (EMCCD, also known as an L3Vision CCD, a product commercialized by e2v Ltd., GB, L3CCD or Impactron CCD, a now-discontinued product offered in the past by Texas Instruments) is a charge-coupled device in which
5671-432: The Fermi level and when the voltage reaches the threshold voltage, the intrinsic level does cross the Fermi level, and that is what is known as inversion. At that point, the surface of the semiconductor is inverted from p-type into n-type. If the Fermi level lies above the intrinsic level, the semiconductor is of n-type, therefore at inversion, when the intrinsic level reaches and crosses the Fermi level (which lies closer to
5778-638: The Mavigraph, employing cyan, magenta, yellow and black dye-transfer sheets and capable of producing prints of up to 120mm x 160mm on A5 paper, made up of the 480 lines from the captured images, in a five-minute process. The unreleased original MAVICA as well as the later ProMavica MVC-5000 and MVC-7000 were designed as single-lens reflex systems with interchangeable lenses. At least the ProMavica MVC-7000 also featured lens mount adapters for Nikon and Canon lenses. The VF format soon evolved into
5885-610: The PPD began to be incorporated into most CCD devices, becoming a fixture in consumer electronic video cameras and then digital still cameras . Since then, the PPD has been used in nearly all CCD sensors and then CMOS sensors . In January 2006, Boyle and Smith were awarded the National Academy of Engineering Charles Stark Draper Prize , and in 2009 they were awarded the Nobel Prize for Physics for their invention of
5992-463: The addition of n-type source and drain regions. The MOS capacitor structure is the heart of the MOSFET. Consider a MOS capacitor where the silicon base is of p-type. If a positive voltage is applied at the gate, holes which are at the surface of the p-type substrate will be repelled by the electric field generated by the voltage applied. At first, the holes will simply be repelled and what will remain on
6099-451: The array's dark current , improving the sensitivity of the CCD to low light intensities, even for ultraviolet and visible wavelengths. Professional observatories often cool their detectors with liquid nitrogen to reduce the dark current, and therefore the thermal noise , to negligible levels. The frame transfer CCD imager was the first imaging structure proposed for CCD Imaging by Michael Tompsett at Bell Laboratories. A frame transfer CCD
6206-467: The backward-compatible Hi-VF format, supported by the ProMavica MVC-7000 and the Hi-Band Mavica models. From the late 1990s on, Sony released a number of cameras based on digital (rather than analog) technology under the "Digital Mavica", "FD Mavica" and "CD Mavica" brands. The earliest of these digital models recorded onto 3.5" 1.4 MiB 2HD floppy disks in computer-readable DOS FAT12 format,
6313-692: The basic building blocks of a CCD, are biased above the threshold for inversion when image acquisition begins, allowing the conversion of incoming photons into electron charges at the semiconductor-oxide interface; the CCD is then used to read out these charges. Although CCDs are not the only technology to allow for light detection, CCD image sensors are widely used in professional, medical, and scientific applications where high-quality image data are required. In applications with less exacting quality demands, such as consumer and professional digital cameras , active pixel sensors , also known as CMOS sensors (complementary MOS sensors), are generally used. However,
6420-448: The body) are highly doped as signified by a "+" sign after the type of doping. If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that flow through
6527-426: The channel in which the photogenerated charge packets will travel. Simon Sze details the advantages of a buried-channel device: This thin layer (= 0.2–0.3 micron) is fully depleted and the accumulated photogenerated charge is kept away from the surface. This structure has the advantages of higher transfer efficiency and lower dark current, from reduced surface recombination. The penalty is smaller charge capacity, by
SECTION 60
#17327869713576634-406: The channel in whole or in part, they are referred to as raised source/drain regions. The operation of a MOSFET can be separated into three different modes, depending on the voltages at the terminals. In the following discussion, a simplified algebraic model is used. Modern MOSFET characteristics are more complex than the algebraic model presented here. For an enhancement-mode, n-channel MOSFET ,
6741-408: The channel; similarly, the drain is where the charge carriers leave the channel. The occupancy of the energy bands in a semiconductor is set by the position of the Fermi level relative to the semiconductor energy-band edges. With sufficient gate voltage, the valence band edge is driven far from the Fermi level, and holes from the body are driven away from the gate. At larger gate bias still, near
6848-451: The charge could be stepped along from one to the next. This led to the invention of the charge-coupled device by Boyle and Smith in 1969. They conceived of the design of what they termed, in their notebook, "Charge 'Bubble' Devices". The initial paper describing the concept in April 1970 listed possible uses as memory , a delay line, and an imaging device. The device could also be used as
6955-414: The conduction band (valence band) then the semiconductor type will be of n-type (p-type). When the gate voltage is increased in a positive sense (for the given example), this will shift the intrinsic energy level band so that it will curve downwards towards the valence band. If the Fermi level lies closer to the valence band (for p-type), there will be a point when the Intrinsic level will start to cross
7062-422: The current flow between drain and source. This is known as enhancement mode. The traditional metal–oxide–semiconductor (MOS) structure is obtained by growing a layer of silicon dioxide ( SiO 2 ) on top of a silicon substrate, commonly by thermal oxidation and depositing a layer of metal or polycrystalline silicon (the latter is commonly used). As silicon dioxide is a dielectric material, its structure
7169-731: The depletion layer and C ox {\displaystyle C_{\text{ox}}} = capacitance of the oxide layer. This equation is generally used, but is only an adequate approximation for the source tied to the bulk. For the source not tied to the bulk, the subthreshold equation for drain current in saturation is I D ≈ I D0 e V G − V th n V T e − V S V T . {\displaystyle I_{\text{D}}\approx I_{\text{D0}}e^{\frac {V_{\text{G}}-V_{\text{th}}}{nV_{\text{T}}}}e^{-{\frac {V_{\text{S}}}{V_{\text{T}}}}}.} In
7276-467: The device may be referred to as a metal-insulator-semiconductor FET (MISFET). Compared to the MOS capacitor, the MOSFET includes two additional terminals ( source and drain ), each connected to individual highly doped regions that are separated by the body region. These regions can be either p or n type, but they must both be of the same type, and of opposite type to the body region. The source and drain (unlike
7383-468: The effect of thermal energy on the Fermi–Dirac distribution of electron energies which allow some of the more energetic electrons at the source to enter the channel and flow to the drain. This results in a subthreshold current that is an exponential function of gate-source voltage. While the current between drain and source should ideally be zero when the transistor is being used as a turned-off switch, there
7490-424: The electron is now fixed onto the atom and immobile. As the voltage at the gate increases, there will be a point at which the surface above the depletion region will be converted from p-type into n-type, as electrons from the bulk area will start to get attracted by the larger electric field. This is known as inversion . The threshold voltage at which this conversion happens is one of the most important parameters in
7597-477: The first planar transistors, in which drain and source were adjacent at the same surface. They showed that silicon dioxide insulated, protected silicon wafers and prevented dopants from diffusing into the wafer. At Bell Labs, the importance of Frosch and Derick technique and transistors was immediately realized. Results of their work circulated around Bell Labs in the form of BTL memos before being published in 1957. At Shockley Semiconductor , Shockley had circulated
7704-485: The form of CMOS logic . The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925. In 1934, inventor Oskar Heil independently patented a similar device in Europe. In the 1940s, Bell Labs scientists William Shockley , John Bardeen and Walter Houser Brattain attempted to build a field-effect device, which led to their discovery of the transistor effect. However,
7811-819: The gain is shown in the graph on the right. For multiplication registers with many elements and large gains it is well modelled by the equation: P ( n ) = ( n − m + 1 ) m − 1 ( m − 1 ) ! ( g − 1 + 1 m ) m exp ( − n − m + 1 g − 1 + 1 m ) if n ≥ m {\displaystyle P\left(n\right)={\frac {\left(n-m+1\right)^{m-1}}{\left(m-1\right)!\left(g-1+{\frac {1}{m}}\right)^{m}}}\exp \left(-{\frac {n-m+1}{g-1+{\frac {1}{m}}}}\right)\quad {\text{ if }}n\geq m} where P
7918-413: The gate leads to a higher electron density in the inversion layer and therefore increases the current flow between the source and drain. For gate voltages below the threshold value, the channel is lightly populated, and only a very small subthreshold leakage current can flow between the source and the drain. When a negative gate-source voltage (positive source-gate) is applied, it creates a p-channel at
8025-569: The gate material can be a layer of polysilicon (polycrystalline silicon). Similarly, "oxide" in the name can also be a misnomer, as different dielectric materials are used with the aim of obtaining strong channels with smaller applied voltages. The MOSFET is by far the most common transistor in digital circuits, as billions may be included in a memory chip or microprocessor. Since MOSFETs can be made with either p-type or n-type semiconductors, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in
8132-408: The gate voltage at which the volume density of electrons in the inversion layer is the same as the volume density of holes in the body is called the threshold voltage . When the voltage between transistor gate and source ( V G ) exceeds the threshold voltage ( V th ), the difference is known as overdrive voltage . This structure with p-type body is the basis of the n-type MOSFET, which requires
8239-506: The image sensor for storage. In this device, only one pixel shift has to occur to transfer from image area to storage area; thus, shutter times can be less than a microsecond and smear is essentially eliminated. The advantage is not free, however, as the imaging area is now covered by opaque strips dropping the fill factor to approximately 50 percent and the effective quantum efficiency by an equivalent amount. Modern designs have addressed this deleterious characteristic by adding microlenses on
8346-497: The incident light. Most common types of CCDs are sensitive to near-infrared light, which allows infrared photography , night-vision devices, and zero lux (or near zero lux) video-recording/photography. For normal silicon-based detectors, the sensitivity is limited to 1.1 μm. One other consequence of their sensitivity to infrared is that infrared from remote controls often appears on CCD-based digital cameras or camcorders if they do not have infrared blockers. Cooling reduces
8453-417: The increase in power consumption due to gate current leakage, a high-κ dielectric is used instead of silicon dioxide for the gate insulator, while polysilicon is replaced by metal gates (e.g. Intel , 2009). The gate is separated from the channel by a thin insulating layer, traditionally of silicon dioxide and later of silicon oxynitride . Some companies use a high-κ dielectric and metal gate combination in
8560-467: The invention and began development programs. Fairchild's effort, led by ex-Bell researcher Gil Amelio, was the first with commercial devices, and by 1974 had a linear 500-element device and a 2D 100 × 100 pixel device. Peter Dillon, a scientist at Kodak Research Labs, invented the first color CCD image sensor by overlaying a color filter array on this Fairchild 100 x 100 pixel Interline CCD starting in 1974. Steven Sasson , an electrical engineer working for
8667-818: The lack of channel region near the drain. Although the channel does not extend the full length of the device, the electric field between the drain and the channel is very high, and conduction continues. The drain current is now weakly dependent upon drain voltage and controlled primarily by the gate-source voltage, and modeled approximately as: I D = μ n C ox 2 W L [ V GS − V th ] 2 [ 1 + λ V DS ] . {\displaystyle I_{\text{D}}={\frac {\mu _{n}C_{\text{ox}}}{2}}{\frac {W}{L}}\left[V_{\text{GS}}-V_{\text{th}}\right]^{2}\left[1+\lambda V_{\text{DS}}\right].} The additional factor involving λ,
8774-431: The large quality advantage CCDs enjoyed early on has narrowed over time and since the late 2010s CMOS sensors are the dominant technology, having largely if not completely replaced CCD image sensors. The basis for the CCD is the metal–oxide–semiconductor (MOS) structure, with MOS capacitors being the basic building blocks of a CCD, and a depleted MOS structure used as the photodetector in early CCD devices. In
8881-411: The late 1960s, Willard Boyle and George E. Smith at Bell Labs were researching MOS technology while working on semiconductor bubble memory . They realized that an electric charge was the analogy of the magnetic bubble and that it could be stored on a tiny MOS capacitor. As it was fairly straightforward to fabricate a series of MOS capacitors in a row, they connected a suitable voltage to them so that
8988-573: The models were formed with a single lens reflex component combined with an interchangeable lens. And to give them flexibility, one or two versions also had lens mount adapters. The Mavica line has been discontinued. Sony continues to produce digital cameras in the Cyber-shot and Alpha series, which use Memory Stick and other flash card technologies for storage. There were other digital cameras that used disk storage as memory media: Charge-coupled device A charge-coupled device ( CCD )
9095-467: The multiplied electrons back to photons which are guided to the CCD by a fiber optic or a lens. An image intensifier inherently includes a shutter functionality: If the control voltage between the photocathode and the MCP is reversed, the emitted photoelectrons are not accelerated towards the MCP but return to the photocathode. Thus, no electrons are multiplied and emitted by the MCP, no electrons are going to
9202-413: The other in the mentioned sequence. The photons which are coming from the light source fall onto the photocathode, thereby generating photoelectrons. The photoelectrons are accelerated towards the MCP by an electrical control voltage, applied between photocathode and MCP. The electrons are multiplied inside of the MCP and thereafter accelerated towards the phosphor screen. The phosphor screen finally converts
9309-491: The output of the CCD, and this must be taken into consideration in satellites using CCDs. The photoactive region of a CCD is, generally, an epitaxial layer of silicon . It is lightly p doped (usually with boron ) and is grown upon a substrate material, often p++. In buried-channel devices, the type of design utilized in most modern CCDs, certain areas of the surface of the silicon are ion implanted with phosphorus , giving them an n-doped designation. This region defines
9416-401: The output of the charge amplifier into a low-pass filter), which is then processed and fed out to other circuits for transmission, recording, or other processing. Before the MOS capacitors are exposed to light, they are biased into the depletion region; in n-channel CCDs, the silicon under the bias gate is slightly p -doped or intrinsic. The gate is then biased at a positive potential, above
9523-407: The phosphor screen and no light is emitted from the image intensifier. In this case no light falls onto the CCD, which means that the shutter is closed. The process of reversing the control voltage at the photocathode is called gating and therefore ICCDs are also called gateable CCD cameras. Besides the extremely high sensitivity of ICCD cameras, which enable single photon detection, the gateability
9630-495: The preprint of their article in December 1956 to all his senior staff, including Jean Hoerni , who would later invent the planar process in 1959 while at Fairchild Semiconductor . After this, J.R. Ligenza and W.G. Spitzer studied the mechanism of thermally grown oxides, fabricated a high quality Si/ SiO 2 stack and published their results in 1960. Following this research, Mohamed Atalla and Dawon Kahng proposed
9737-410: The product was launched. Despite the lower image quality compared to traditional film, Japanese news professionals had reportedly been "plaguing the firm with requests for the camera" according to Sony, anticipating the potential convenience of handling pictures in a form that would be readily compatible with computing and telecommunications devices. Sony also demonstrated a thermal transfer printer called
9844-399: The semiconductor surface the conduction band edge is brought close to the Fermi level, populating the surface with electrons in an inversion layer or n-channel at the interface between the p region and the oxide. This conducting channel extends between the source and the drain, and current is conducted through it when a voltage is applied between the two electrodes. Increasing the voltage on
9951-601: The structure failed to show the anticipated effects, due to the problem of surface states : traps on the semiconductor surface that hold electrons immobile. With no surface passivation , they were only able to build the BJT and thyristor transistors. In 1955, Carl Frosch and Lincoln Derick accidentally grew a layer of silicon dioxide over the silicon wafer, for which they observed surface passivation effects. By 1957 Frosch and Derick, using masking and predeposition, were able to manufacture silicon dioxide field effect transistors;
10058-406: The surface of the device to direct light away from the opaque regions and on the active area. Microlenses can bring the fill factor back up to 90 percent or more depending on pixel size and the overall system's optical design. The choice of architecture comes down to one of utility. If the application cannot tolerate an expensive, failure-prone, power-intensive mechanical shutter, an interline device
10165-418: The surface of the n region, analogous to the n-channel case, but with opposite polarities of charges and voltages. When a voltage less negative than the threshold value (a negative voltage for the p-channel) is applied between gate and source, the channel disappears and only a very small subthreshold current can flow between the source and the drain. The device may comprise a silicon on insulator device in which
10272-410: The surface will be immobile (negative) atoms of the acceptor type, which creates a depletion region on the surface. A hole is created by an acceptor atom, e.g., boron, which has one less electron than a silicon atom. Holes are not actually repelled, being non-entities; electrons are attracted by the positive field, and fill these holes. This creates a depletion region where no charge carriers exist because
10379-417: The thermal voltage V T = k T / q {\displaystyle V_{\text{T}}=kT/q} and the slope factor n is given by: n = 1 + C dep C ox , {\displaystyle n=1+{\frac {C_{\text{dep}}}{C_{\text{ox}}}},} with C dep {\displaystyle C_{\text{dep}}} = capacitance of
10486-443: The three operational modes are: When V GS < V th : where V GS {\displaystyle V_{\text{GS}}} is gate-to-source bias and V th {\displaystyle V_{\text{th}}} is the threshold voltage of the device. According to the basic threshold model, the transistor is turned off, and there is no conduction between drain and source. A more accurate model considers
10593-407: The threshold for strong inversion, which will eventually result in the creation of an n channel below the gate as in a MOSFET . However, it takes time to reach this thermal equilibrium: up to hours in high-end scientific cameras cooled at low temperature. Initially after biasing, the holes are pushed far into the substrate, and no mobile electrons are at or near the surface; the CCD thus operates in
10700-456: The total usable integration time. The accumulation of electrons at or near the surface can proceed either until image integration is over and charge begins to be transferred, or thermal equilibrium is reached. In this case, the well is said to be full. The maximum capacity of each well is known as the well depth, typically about 10 electrons per pixel. CCDs are normally susceptible to ionizing radiation and energetic particles which causes noise in
10807-421: The valence band), the semiconductor type changes at the surface as dictated by the relative positions of the Fermi and Intrinsic energy levels. A MOSFET is based on the modulation of charge concentration by a MOS capacitance between a body electrode and a gate electrode located above the body and insulated from all other device regions by a gate dielectric layer. If dielectrics other than an oxide are employed,
10914-408: The voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals . The term metal–insulator–semiconductor field-effect transistor ( MISFET ) is almost synonymous with MOSFET . Another near-synonym is insulated-gate field-effect transistor ( IGFET ). The main advantage of
11021-554: Was a simple 8-bit shift register, reported by Tompsett, Amelio and Smith in August 1970. This device had input and output circuits and was used to demonstrate its use as a shift register and as a crude eight pixel linear imaging device. Development of the device progressed at a rapid rate. By 1971, Bell researchers led by Michael Tompsett were able to capture images with simple linear devices. Several companies, including Fairchild Semiconductor , RCA and Texas Instruments , picked up on
11128-748: Was about 100 times slower than contemporary bipolar transistors and was initially seen as inferior. Nevertheless, Kahng pointed out several advantages of the device, notably ease of fabrication and its application in integrated circuits . Usually the semiconductor of choice is silicon . Some chip manufacturers, most notably IBM and Intel , use an alloy of silicon and germanium ( SiGe ) in MOSFET channels. Many semiconductors with better electrical properties than silicon, such as gallium arsenide , do not form good semiconductor-to-insulator interfaces, and thus are not suitable for MOSFETs. Research continues on creating insulators with acceptable electrical characteristics on other semiconductor materials. To overcome
11235-479: Was addressed. Today, frame-transfer is usually chosen when an interline architecture is not available, such as in a back-illuminated device. CCDs containing grids of pixels are used in digital cameras , optical scanners , and video cameras as light-sensing devices. They commonly respond to 70 percent of the incident light (meaning a quantum efficiency of about 70 percent) making them far more efficient than photographic film , which captures only about 2 percent of
11342-450: Was demonstrated by Gil Amelio , Michael Francis Tompsett and George Smith in April 1970. This was the first experimental application of the CCD in image sensor technology, and used a depleted MOS structure as the photodetector. The first patent ( U.S. patent 4,085,456 ) on the application of CCDs to imaging was assigned to Tompsett, who filed the application in 1971. The first working CCD made with integrated circuit technology
11449-415: Was launched in December 1976. Under the leadership of Kazuo Iwama , Sony started a large development effort on CCDs involving a significant investment. Eventually, Sony managed to mass-produce CCDs for their camcorders . Before this happened, Iwama died in August 1982. Subsequently, a CCD chip was placed on his tombstone to acknowledge his contribution. The first mass-produced consumer CCD video camera ,
#356643