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90-445: Strictly speaking, read-only memory refers to hard-wired memory, such as diode matrix or a mask ROM integrated circuit (IC), that cannot be electronically changed after manufacture. Although discrete circuits can be altered in principle, through the addition of bodge wires and the removal or replacement of components, ICs cannot. Correction of errors, or updates to the software, require new devices to be manufactured and to replace

180-429: A depletion layer by forcing the positively charged holes away from the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions (see doping ). If V G is high enough, a high concentration of negative charge carriers forms in an inversion layer located in a thin layer next to the interface between the semiconductor and the insulator. Conventionally,

270-405: A MOSFET is that it requires almost no input current to control the load current, when compared to bipolar junction transistors (BJTs). In an enhancement mode MOSFET, voltage applied to the gate terminal increases the conductivity of the device. In depletion mode transistors, voltage applied at the gate reduces the conductivity. The "metal" in the name MOSFET is sometimes a misnomer , because

360-564: A MOSFET. In the case of a p-type MOSFET, bulk inversion happens when the intrinsic energy level at the surface becomes smaller than the Fermi level at the surface. This can be seen on a band diagram. The Fermi level defines the type of semiconductor in discussion. If the Fermi level is equal to the Intrinsic level, the semiconductor is of intrinsic, or pure type. If the Fermi level lies closer to

450-632: A PC for firmware updates; for example, a digital audio player might be updated to support a new file format . Some hobbyists have taken advantage of this flexibility to reprogram consumer products for new purposes; for example, the iPodLinux and OpenWrt projects have enabled users to run full-featured Linux distributions on their MP3 players and wireless routers, respectively. ROM is also useful for binary storage of cryptographic data, as it makes them difficult to replace, which may be desirable in order to enhance information security . Since ROM (at least in hard-wired mask form) cannot be modified, it

540-535: A bipolar transistor. The subthreshold I–V curve depends exponentially upon threshold voltage, introducing a strong dependence on any manufacturing variation that affects threshold voltage; for example: variations in oxide thickness, junction depth, or body doping that change the degree of drain-induced barrier lowering. The resulting sensitivity to fabricational variations complicates optimization for leakage and performance. When V GS > V th and V DS < V GS  − V th : The transistor

630-511: A bit line to a word line. Consequently, ROM could be implemented at a lower cost-per- bit than RAM for many years. Most home computers of the 1980s stored a BASIC interpreter or operating system in ROM as other forms of non-volatile storage such as magnetic disk drives were too costly. For example, the Commodore 64 included 64 KB of RAM and 20 KB of ROM containing a BASIC interpreter and

720-404: A buried oxide is formed below a thin semiconductor layer. If the channel region between the gate dielectric and the buried oxide region is very thin, the channel is referred to as an ultrathin channel region with the source and drain regions formed on either side in or above the thin semiconductor layer. Other semiconductor materials may be employed. When the source and drain regions are formed above

810-522: A company can simply order a large batch of fresh PROM chips and program them with the desired contents at its designers' convenience. The advent of the metal–oxide–semiconductor field-effect transistor (MOSFET), invented at Bell Labs in 1959, enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements in semiconductor memory , a function previously served by magnetic cores in computer memory . In 1967, Dawon Kahng and Simon Sze of Bell Labs proposed that

900-405: A diode (or transistor) at every intersection. A person would microprogram the control store on these computers by destroying the unwanted connections at selected intersections. Some modern microprocessors and ASICs use a diode matrix or transistor matrix control store. Typically a blank grid is designed with a diode (or transistor) at every intersection, and then a mask is prepared that leaves out

990-405: A fast control store is an important part of a fast computer. For a while the control store was many times faster than program memory, allowing a long, complicated sequence of steps through the control store per instruction fetch, leading to what is now called complex instruction set computing . Later techniques for fast instruction cache sped that cache up to the point that the control store was only

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1080-460: A few times faster than the instruction cache, leading to fewer and eventually only one step through the control store per instruction fetch in reduced instruction set computing . Metal%E2%80%93oxide%E2%80%93semiconductor field-effect transistor In electronics , the metal–oxide–semiconductor field-effect transistor ( MOSFET , MOS-FET , MOS FET , or MOS transistor ) is a type of field-effect transistor (FET), most commonly fabricated by

1170-476: A long-channel device, there is no drain voltage dependence of the current once V DS ≫ V T {\displaystyle V_{\text{DS}}\gg V_{\text{T}}} , but as channel length is reduced drain-induced barrier lowering introduces drain voltage dependence that depends in a complex way upon the device geometry (for example, the channel doping, the junction doping and so on). Frequently, threshold voltage V th for this mode

1260-411: A new role as a medium for mass storage or secondary storage of files. Mask ROM is a read-only memory whose contents are programmed by the integrated circuit manufacturer (rather than by the user). The desired memory contents are furnished by the customer to the device manufacturer. The desired data is converted into a custom photomask /mask layer for the final metallization of interconnections on

1350-480: A silicon MOS transistor in 1959 and successfully demonstrated a working MOS device with their Bell Labs team in 1960. Their team included E. E. LaBate and E. I. Povilonis who fabricated the device; M. O. Thurston, L. A. D’Asaro, and J. R. Ligenza who developed the diffusion processes, and H. K. Gummel and R. Lindner who characterized the device. This was a culmination of decades of field-effect research that began with Lilienfeld. The first MOS transistor at Bell Labs

1440-509: A specific part of the device, instead of the entire device. This can be done at high speed, hence the name "flash". All of these technologies improved the flexibility of ROM, but at a significant cost-per-chip, so that in large quantities mask ROM would remain an economical choice for many years. (Decreasing cost of reprogrammable devices had almost eliminated the market for mask ROM by the year 2000.) Rewriteable technologies were envisioned as replacements for mask ROM. The most recent development

1530-416: A technical level the gains have been achieved by increasing parallelism both in controller design and of storage, the use of large DRAM read/write caches and the implementation of memory cells which can store more than one bit (DLC, TLC and MLC). The latter approach is more failure prone but this has been largely mitigated by overprovisioning (the inclusion of spare capacity in a product which is visible only to

1620-406: A variety of other devices. In particular, many microprocessors have mask ROM to store their microcode . Some microcontrollers have mask ROM to store the bootloader or all of their firmware . Classic mask-programmed ROM chips are integrated circuits that physically encode the data to be stored, and thus it is impossible to change their contents after fabrication. It is also possible to write

1710-434: Is NAND flash , also invented at Toshiba. Its designers explicitly broke from past practice, stating plainly that "the aim of NAND flash is to replace hard disks ," rather than the traditional use of ROM as a form of non-volatile primary storage . As of 2021, NAND has nearly completely achieved this goal by offering throughput higher than hard disks, lower latency, higher tolerance of physical shock, extreme miniaturization (in

1800-423: Is a thriving community engaged in the distribution and trading of such software for preservation/sharing purposes. Diode matrix A diode matrix is a two-dimensional grid of wires: each "intersection" wherein one-row crosses over another has either a diode connecting them, or the wires are isolated from each other. It is one of the popular techniques for implementing a read-only memory . A diode matrix

1890-748: Is a weak-inversion current, sometimes called subthreshold leakage. In weak inversion where the source is tied to bulk, the current varies exponentially with V GS {\displaystyle V_{\text{GS}}} as given approximately by: I D ≈ I D0 e V GS − V th n V T , {\displaystyle I_{\text{D}}\approx I_{\text{D0}}e^{\frac {V_{\text{GS}}-V_{\text{th}}}{nV_{\text{T}}}},} where I D0 {\displaystyle I_{\text{D0}}} = current at V GS = V th {\displaystyle V_{\text{GS}}=V_{\text{th}}} ,

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1980-407: Is common practice to use rewritable non-volatile memory – such as UV- EPROM or EEPROM – for the development phase of a project, and to switch to mask ROM when the code has been finalized. For example, Atmel microcontrollers come in both EEPROM and mask ROM formats. The main advantage of mask ROM is its cost. Per bit, mask ROM was more compact than any other kind of semiconductor memory . Since

2070-714: Is defined as the gate voltage at which a selected value of current I D0 occurs, for example, I D0 = 1   μA, which may not be the same V th -value used in the equations for the following modes. Some micropower analog circuits are designed to take advantage of subthreshold conduction. By working in the weak-inversion region, the MOSFETs in these circuits deliver the highest possible transconductance-to-current ratio, namely: g m / I D = 1 / ( n V T ) {\displaystyle g_{m}/I_{\text{D}}=1/\left(nV_{\text{T}}\right)} , almost that of

2160-415: Is equivalent to a planar capacitor , with one of the electrodes replaced by a semiconductor. When a voltage is applied across a MOS structure, it modifies the distribution of charges in the semiconductor. If we consider a p-type semiconductor (with N A the density of acceptors , p the density of holes; p = N A in neutral bulk), a positive voltage, V G , from gate to body (see figure) creates

2250-413: Is only suitable for storing data which is not expected to need modification for the life of the device. To that end, ROM has been used in many computers to store look-up tables for the evaluation of mathematical and logical functions (for example, a floating-point unit might tabulate the sine function in order to facilitate faster computation). This was especially effective when CPUs were slow and ROM

2340-469: Is sometimes used to refer to a ROM device containing specific software or a file with software to be stored in a writable ROM device. For example, users modifying or replacing the Android operating system describe files containing a modified or replacement operating system as " custom ROMs " after the type of storage the file used to be written to, and they may distinguish between ROM (where software and data

2430-415: Is still applied to images of newer games distributed on CD-ROMs or other optical media. ROM images of commercial games, firmware, etc. usually contain copyrighted software. The unauthorized copying and distribution of copyrighted software is a violation of copyright laws in many jurisdictions, although duplication for backup purposes may be considered fair use depending on location. In any case, there

2520-451: Is stored, usually Flash memory ) and RAM. ROM and RAM are essential components of a computer, each serving distinct roles. RAM, or Random Access Memory, is a temporary, volatile storage medium that loses data when the system powers down. In contrast, ROM, being non-volatile, preserves its data even after the computer is switched off. IBM used capacitor read-only storage (CROS) and transformer read-only storage (TROS) to store microcode for

2610-501: Is the charge-carrier effective mobility, W {\displaystyle W} is the gate width, L {\displaystyle L} is the gate length and C ox {\displaystyle C_{\text{ox}}} is the gate oxide capacitance per unit area. The transition from the exponential subthreshold region to the triode region is not as sharp as the equations suggest. When V GS > V th and V DS ≥ (V GS  – V th ): The switch

2700-787: Is turned on, and a channel has been created which allows current between the drain and the source. The MOSFET operates like a resistor, controlled by the gate voltage relative to both the source and drain voltages. The current from drain to source is modeled as: I D = μ n C ox W L ( ( V GS − V t h ) V DS − V DS 2 2 ) {\displaystyle I_{\text{D}}=\mu _{n}C_{\text{ox}}{\frac {W}{L}}\left(\left(V_{\text{GS}}-V_{\rm {th}}\right)V_{\text{DS}}-{\frac {{V_{\text{DS}}}^{2}}{2}}\right)} where μ n {\displaystyle \mu _{n}}

2790-427: Is turned on, and a channel has been created, which allows current between the drain and source. Since the drain voltage is higher than the source voltage, the electrons spread out, and conduction is not through a narrow channel but through a broader, two- or three-dimensional current distribution extending away from the interface and deeper in the substrate. The onset of this region is also known as pinch-off to indicate

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2880-512: Is used as the control store or microprogram in many early computers. A logically equivalent transistor matrix is still used as the control store or microprogram or 'decode ROM' in many modern microprocessors. A single row of the diode matrix (or transistor matrix) is activated at any one instant. Charge flows through each diode connected to that row. That activates the column corresponding to each row. The only activated control signals during that instant were those whose corresponding column wire

2970-511: Is used to store the basic bootstrapping firmware for the processor, as well as the various firmware needed to internally control self-contained devices such as graphic cards , hard disk drives , solid-state drives , optical disc drives , TFT screens , etc., in the system. Today, many of these "read-only" memories – especially the BIOS / UEFI – are often replaced with EEPROM or Flash memory (see below), to permit in-place reprogramming should

3060-447: The 45 nanometer node. When a voltage is applied between the gate and the source, the electric field generated penetrates through the oxide and creates an inversion layer or channel at the semiconductor-insulator interface. The inversion layer provides a channel through which current can pass between source and drain terminals. Varying the voltage between the gate and body modulates the conductivity of this layer and thereby controls

3150-650: The Electrotechnical Laboratory in 1972, went a long way to solving problem 4, since an EEPROM can be programmed in-place if the containing device provides a means to receive the program contents from an external source (for example, a personal computer via a serial cable ). Flash memory , invented by Fujio Masuoka at Toshiba in the early 1980s and commercialized in the late 1980s, is a form of EEPROM that makes very efficient use of chip area and can be erased and reprogrammed thousands of times without damage. It permits erasure and programming of only

3240-632: The KERNAL operating system. Later home or office computers such as the IBM PC XT often included magnetic disk drives, and larger amounts of RAM, allowing them to load their operating systems from disk into RAM, with only a minimal hardware initialization core and bootloader remaining in ROM (known as the BIOS in IBM-compatible computers). This arrangement allowed for a more complex and easily upgradeable operating system. In modern PCs, "ROM"

3330-475: The controlled oxidation of silicon . It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals . The term metal–insulator–semiconductor field-effect transistor ( MISFET ) is almost synonymous with MOSFET . Another near-synonym is insulated-gate field-effect transistor ( IGFET ). The main advantage of

3420-510: The floating gate of a MOS semiconductor device could be used for the cell of a reprogrammable ROM, which led to Dov Frohman of Intel inventing erasable programmable read-only memory (EPROM) in 1971. The 1971 invention of EPROM essentially solved problem 3, since EPROM (unlike PROM) can be repeatedly reset to its unprogrammed state by exposure to strong ultraviolet light. Electrically erasable programmable read-only memory (EEPROM), developed by Yasuo Tarui, Yutaka Hayashi and Kiyoko Naga at

3510-418: The 1960s, both ROM and its mutable counterpart static RAM were implemented as arrays of transistors in silicon chips; however, a ROM memory cell could be implemented using fewer transistors than an SRAM memory cell, since the latter needs a latch (comprising 5-20 transistors) to retain its contents, while a ROM cell might consist of the absence (logical 0) or presence (logical 1) of one transistor connecting

3600-432: The Fermi level and when the voltage reaches the threshold voltage, the intrinsic level does cross the Fermi level, and that is what is known as inversion. At that point, the surface of the semiconductor is inverted from p-type into n-type. If the Fermi level lies above the intrinsic level, the semiconductor is of n-type, therefore at inversion, when the intrinsic level reaches and crosses the Fermi level (which lies closer to

3690-465: The ROM chips, and the presence or absence of these features will represent either a 1 or a 0 bit, depending on the ROM design. Thus by design, any attempts to electronically change the data will fail, since the data is defined by the presence or absence of physical features or structures that cannot be electronically changed. For every software program, even for revisions of the same program, the entire mask must be changed, which can be costly. In mask ROM,

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3780-463: The addition of n-type source and drain regions. The MOS capacitor structure is the heart of the MOSFET. Consider a MOS capacitor where the silicon base is of p-type. If a positive voltage is applied at the gate, holes which are at the surface of the p-type substrate will be repelled by the electric field generated by the voltage applied. At first, the holes will simply be repelled and what will remain on

3870-448: The body) are highly doped as signified by a "+" sign after the type of doping. If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that flow through

3960-406: The channel in whole or in part, they are referred to as raised source/drain regions. The operation of a MOSFET can be separated into three different modes, depending on the voltages at the terminals. In the following discussion, a simplified algebraic model is used. Modern MOSFET characteristics are more complex than the algebraic model presented here. For an enhancement-mode, n-channel MOSFET ,

4050-408: The channel; similarly, the drain is where the charge carriers leave the channel. The occupancy of the energy bands in a semiconductor is set by the position of the Fermi level relative to the semiconductor energy-band edges. With sufficient gate voltage, the valence band edge is driven far from the Fermi level, and holes from the body are driven away from the gate. At larger gate bias still, near

4140-414: The conduction band (valence band) then the semiconductor type will be of n-type (p-type). When the gate voltage is increased in a positive sense (for the given example), this will shift the intrinsic energy level band so that it will curve downwards towards the valence band. If the Fermi level lies closer to the valence band (for p-type), there will be a point when the Intrinsic level will start to cross

4230-420: The contents of a Laser ROM by using a laser to alter the electrical properties of only some diodes on the ROM, or by using a laser to cut only some polysilicon links, instead of using a mask. By applying write protection , some types of reprogrammable ROMs may temporarily become read-only memory. There are other types of non-volatile memory which are not based on solid-state IC technology, including: Although

4320-423: The control store on such early computers by manually attaching diodes to selected intersections of the word lines and bit lines. In schematic diagrams, the word lines are usually horizontal, and the bit lines are usually vertical. The control store on some minicomputers was one or more programmable logic array chips. The "blank" PLA from the chip manufacturer came with a diode matrix or transistor matrix with

4410-656: The cost of an integrated circuit strongly depends on its size, mask ROM is significantly cheaper than any other kind of semiconductor memory. However, the one-time masking cost is high and there is a long turn-around time from design to product phase. Design errors are costly: if an error in the data or code is found, the mask ROM is useless and must be replaced in order to change the code or data. As of 2003, four companies produce most such mask ROM chips: Samsung Electronics , NEC Corporation , Oki Electric Industry , and Macronix . Some integrated circuits contain only mask ROM. Other integrated circuits contain mask ROM as well as

4500-422: The current flow between drain and source. This is known as enhancement mode. The traditional metal–oxide–semiconductor (MOS) structure is obtained by growing a layer of silicon dioxide ( SiO 2 ) on top of a silicon substrate, commonly by thermal oxidation and depositing a layer of metal or polycrystalline silicon (the latter is commonly used). As silicon dioxide is a dielectric material, its structure

4590-461: The data is physically encoded in the circuit, so it can only be programmed during fabrication. This leads to a number of serious disadvantages: Subsequent developments have addressed these shortcomings. Programmable read-only memory (PROM), invented by Wen Tsing Chow in 1956, allowed users to program its contents exactly once by physically altering its structure with the application of high-voltage pulses. This addressed problems 1 and 2 above, since

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4680-731: The depletion layer and C ox {\displaystyle C_{\text{ox}}} = capacitance of the oxide layer. This equation is generally used, but is only an adequate approximation for the source tied to the bulk. For the source not tied to the bulk, the subthreshold equation for drain current in saturation is I D ≈ I D0 e V G − V th n V T e − V S V T . {\displaystyle I_{\text{D}}\approx I_{\text{D0}}e^{\frac {V_{\text{G}}-V_{\text{th}}}{nV_{\text{T}}}}e^{-{\frac {V_{\text{S}}}{V_{\text{T}}}}}.} In

4770-467: The device may be referred to as a metal-insulator-semiconductor FET (MISFET). Compared to the MOS capacitor, the MOSFET includes two additional terminals ( source and drain ), each connected to individual highly doped regions that are separated by the body region. These regions can be either p or n type, but they must both be of the same type, and of opposite type to the body region. The source and drain (unlike

4860-433: The diode matrix in sequence, and after the last row was activated, started over again with the first row. The technique of microprogramming as first described by Maurice Wilkes in terms of a second diode matrix added to a diode matrix control store. Later computers used a variety of alternative implementations of the control store, but eventually returned to a diode matrix or transistor matrix. A person would microprogram

4950-453: The drive controller) and by increasingly sophisticated read/write algorithms in drive firmware. Because they are written by forcing electrons through a layer of electrical insulation onto a floating transistor gate , rewriteable ROMs can withstand only a limited number of write and erase cycles before the insulation is permanently damaged. In the earliest EPROMs, this might occur after as few as 1,000 write cycles, while in modern Flash EEPROM

5040-468: The effect of thermal energy on the Fermi–Dirac distribution of electron energies which allow some of the more energetic electrons at the source to enter the channel and flow to the drain. This results in a subthreshold current that is an exponential function of gate-source voltage. While the current between drain and source should ideally be zero when the transistor is being used as a turned-off switch, there

5130-424: The electron is now fixed onto the atom and immobile. As the voltage at the gate increases, there will be a point at which the surface above the depletion region will be converted from p-type into n-type, as electrons from the bulk area will start to get attracted by the larger electric field. This is known as inversion . The threshold voltage at which this conversion happens is one of the most important parameters in

5220-417: The endurance may exceed 1,000,000. The limited endurance, as well as the higher cost per bit, means that Flash-based storage is unlikely to completely supplant magnetic disk drives in the near future. The timespan over which a ROM remains accurately readable is not limited by write cycling. The data retention of EPROM, EAROM, EEPROM, and Flash may be time-limited by charge leaking from the floating gates of

5310-477: The first planar transistors, in which drain and source were adjacent at the same surface. They showed that silicon dioxide insulated, protected silicon wafers and prevented dopants from diffusing into the wafer. At Bell Labs, the importance of Frosch and Derick technique and transistors was immediately realized. Results of their work circulated around Bell Labs in the form of BTL memos before being published in 1957. At Shockley Semiconductor , Shockley had circulated

5400-485: The form of CMOS logic . The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925. In 1934, inventor Oskar Heil independently patented a similar device in Europe. In the 1940s, Bell Labs scientists William Shockley , John Bardeen and Walter Houser Brattain attempted to build a field-effect device, which led to their discovery of the transistor effect. However,

5490-720: The form of USB flash drives and tiny microSD memory cards , for example), and much lower power consumption. Many stored-program computers use a form of non-volatile storage (that is, storage that retains its data when power is removed) to store the initial program that runs when the computer is powered on or otherwise begins execution (a process known as bootstrapping , often abbreviated to " booting " or "booting up"). Likewise, every non-trivial computer needs some form of mutable memory to record changes in its state as it executes. Forms of read-only memory were employed as non-volatile storage for programs in most early stored-program computers, such as ENIAC after 1948 . (Until then it

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5580-413: The gate leads to a higher electron density in the inversion layer and therefore increases the current flow between the source and drain. For gate voltages below the threshold value, the channel is lightly populated, and only a very small subthreshold leakage current can flow between the source and the drain. When a negative gate-source voltage (positive source-gate) is applied, it creates a p-channel at

5670-569: The gate material can be a layer of polysilicon (polycrystalline silicon). Similarly, "oxide" in the name can also be a misnomer, as different dielectric materials are used with the aim of obtaining strong channels with smaller applied voltages. The MOSFET is by far the most common transistor in digital circuits, as billions may be included in a memory chip or microprocessor. Since MOSFETs can be made with either p-type or n-type semiconductors, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in

5760-408: The gate voltage at which the volume density of electrons in the inversion layer is the same as the volume density of holes in the body is called the threshold voltage . When the voltage between transistor gate and source ( V G ) exceeds the threshold voltage ( V th ), the difference is known as overdrive voltage . This structure with p-type body is the basis of the n-type MOSFET, which requires

5850-417: The increase in power consumption due to gate current leakage, a high-κ dielectric is used instead of silicon dioxide for the gate insulator, while polysilicon is replaced by metal gates (e.g. Intel , 2009). The gate is separated from the channel by a thin insulating layer, traditionally of silicon dioxide and later of silicon oxynitride . Some companies use a high-κ dielectric and metal gate combination in

5940-425: The installed device. Floating-gate ROM semiconductor memory in the form of erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM) and flash memory can be erased and re-programmed. But usually, this can only be done at relatively slow speeds, may require special equipment to achieve, and is typically only possible a certain number of times. The term "ROM"

6030-441: The integrated circuit, although fuse re-growth was once a problem in some systems. The contents of ROM chips can be extracted with special hardware devices and relevant controlling software. This practice is common for, as a main example, reading the contents of older video game console cartridges . Another example is making backups of firmware/OS ROMs from older computers or other devices - for archival purposes, as in many cases,

6120-499: The invention of the integrated circuit came mask ROM . Mask ROM consists of a grid of word lines (the address input) and bit lines (the data output), selectively joined with transistor switches, and can represent an arbitrary look-up table with a regular physical layout and predictable propagation delay . Mask ROM is programmed with photomasks in photolithography during semiconductor manufacturing . The mask defines physical features or structures that will be removed, or added in

6210-818: The lack of channel region near the drain. Although the channel does not extend the full length of the device, the electric field between the drain and the channel is very high, and conduction continues. The drain current is now weakly dependent upon drain voltage and controlled primarily by the gate-source voltage, and modeled approximately as: I D = μ n C ox 2 W L [ V GS − V th ] 2 [ 1 + λ V DS ] . {\displaystyle I_{\text{D}}={\frac {\mu _{n}C_{\text{ox}}}{2}}{\frac {W}{L}}\left[V_{\text{GS}}-V_{\text{th}}\right]^{2}\left[1+\lambda V_{\text{DS}}\right].} The additional factor involving λ,

6300-475: The memory cell transistors. Early generation EEPROM's, in the mid-1980s generally cited 5 or 6 year data retention. A review of EEPROM's offered in the year 2020 shows manufacturers citing 100 year data retention. Adverse environments will reduce the retention time (leakage is accelerated by high temperatures or radiation ). Masked ROM and fuse/antifuse PROM do not suffer from this effect, as their data retention depends on physical rather than electrical permanence of

6390-547: The memory chip (hence the name). Mask ROM can be made in several ways, all of which aim to change the electrical response of a transistor when it is addressed on a grid, such as: Mask ROM transistors can be arranged in either NOR or NAND configurations and can achieve one of the smallest cell sizes possible as each bit is represented by only one transistor. NAND offers higher storage density than NOR. OR configurations are also possible, but compared to NOR it only connects transistors to V cc instead of V ss . Mask ROMs used to be

6480-415: The most inexpensive, and are the simplest semiconductor memory devices, with only one metal layer and one polysilicon layer, making it the type of semiconductor memory with the highest manufacturing yield (the highest number of working devices per manufacturing run). ROM can be made using one of several semiconductor device fabrication technologies such as CMOS , nMOS , pMOS , and bipolar transistors . It

6570-405: The movement of jumper plugs to apply write-enable signals, and special lock/unlock command codes. Modern NAND Flash can be used to achieve the highest write speeds of any rewritable ROM technology, with speeds as high as 10 GB / s in an SSD. This has been enabled by the increased investment in both consumer and enterprise solid-state drives and flash memory products for higher end mobile devices. On

6660-858: The need for a firmware upgrade arise. However, simple and mature sub-systems (such as the keyboard or some communication controllers in the integrated circuits on the main board, for example) may employ mask ROM or OTP (one-time programmable). ROM and successor technologies such as flash are prevalent in embedded systems . These are in everything from industrial robots to home appliances and consumer electronics ( MP3 players , set-top boxes , etc.) all of which are designed for specific functions, but are based on general-purpose microprocessors . With software usually tightly coupled to hardware, program changes are rarely needed in such devices (which typically lack hard disks for reasons of cost, size, or power consumption). As of 2008, most products use Flash rather than mask ROM, and many provide some means for connecting to

6750-459: The original chips are PROMs and thus at risk of exceeding their usable data lifetime. The resultant memory dump files are known as ROM images or abbreviated ROMs , and can be used to produce duplicate ROMs - for example to produce new cartridges or as digital files for playing in console emulators . The term ROM image originated when most console games were distributed on cartridges containing ROM chips, but achieved such widespread usage that it

6840-495: The preprint of their article in December 1956 to all his senior staff, including Jean Hoerni , who would later invent the planar process in 1959 while at Fairchild Semiconductor . After this, J.R. Ligenza and W.G. Spitzer studied the mechanism of thermally grown oxides, fabricated a high quality Si/ SiO 2 stack and published their results in 1960. Following this research, Mohamed Atalla and Dawon Kahng proposed

6930-442: The relative speed of RAM vs. ROM has varied over time, as of 2007 large RAM chips can be read faster than most ROMs. For this reason (and to allow uniform access), ROM content is sometimes copied to RAM or shadowed before its first use, and subsequently read from RAM. For those types of ROM that can be electrically modified, writing speed has traditionally been much slower than reading speed, and it may need unusually high voltage,

7020-399: The semiconductor surface the conduction band edge is brought close to the Fermi level, populating the surface with electrons in an inversion layer or n-channel at the interface between the p region and the oxide. This conducting channel extends between the source and the drain, and current is conducted through it when a voltage is applied between the two electrodes. Increasing the voltage on

7110-583: The smaller System/360 models, the 360/85 , and the initial two System/370 models ( 370/155 and 370/165 ). On some models there was also a writeable control store (WCS) for additional diagnostics and emulation support. The Apollo Guidance Computer used core rope memory , programmed by threading wires through magnetic cores. The simplest type of solid-state ROM is as old as the semiconductor technology itself. Combinational logic gates can be joined manually to map n -bit address input onto arbitrary values of m -bit data output (a look-up table ). With

7200-601: The structure failed to show the anticipated effects, due to the problem of surface states : traps on the semiconductor surface that hold electrons immobile. With no surface passivation , they were only able to build the BJT and thyristor transistors. In 1955, Carl Frosch and Lincoln Derick accidentally grew a layer of silicon dioxide over the silicon wafer, for which they observed surface passivation effects. By 1957 Frosch and Derick, using masking and predeposition, were able to manufacture silicon dioxide field effect transistors;

7290-418: The surface of the n region, analogous to the n-channel case, but with opposite polarities of charges and voltages. When a voltage less negative than the threshold value (a negative voltage for the p-channel) is applied between gate and source, the channel disappears and only a very small subthreshold current can flow between the source and the drain. The device may comprise a silicon on insulator device in which

7380-410: The surface will be immobile (negative) atoms of the acceptor type, which creates a depletion region on the surface. A hole is created by an acceptor atom, e.g., boron, which has one less electron than a silicon atom. Holes are not actually repelled, being non-entities; electrons are attracted by the positive field, and fill these holes. This creates a depletion region where no charge carriers exist because

7470-417: The thermal voltage V T = k T / q {\displaystyle V_{\text{T}}=kT/q} and the slope factor n is given by: n = 1 + C dep C ox , {\displaystyle n=1+{\frac {C_{\text{dep}}}{C_{\text{ox}}}},} with C dep {\displaystyle C_{\text{dep}}} = capacitance of

7560-443: The three operational modes are: When V GS < V th : where V GS {\displaystyle V_{\text{GS}}} is gate-to-source bias and V th {\displaystyle V_{\text{th}}} is the threshold voltage of the device. According to the basic threshold model, the transistor is turned off, and there is no conduction between drain and source. A more accurate model considers

7650-432: The unwanted connections at selected intersections. When reverse engineering integrated circuits that include such a mask-programmed decode ROM, one of the key steps is to take photographs of that ROM with enough resolution to separate each intersection site and enough color depth to distinguish between the "connected" and "not connected" intersections. Since the control store is in the critical path of computer execution,

7740-421: The valence band), the semiconductor type changes at the surface as dictated by the relative positions of the Fermi and Intrinsic energy levels. A MOSFET is based on the modulation of charge concentration by a MOS capacitance between a body electrode and a gate electrode located above the body and insulated from all other device regions by a gate dielectric layer. If dielectrics other than an oxide are employed,

7830-748: Was about 100 times slower than contemporary bipolar transistors and was initially seen as inferior. Nevertheless, Kahng pointed out several advantages of the device, notably ease of fabrication and its application in integrated circuits . Usually the semiconductor of choice is silicon . Some chip manufacturers, most notably IBM and Intel , use an alloy of silicon and germanium ( SiGe ) in MOSFET channels. Many semiconductors with better electrical properties than silicon, such as gallium arsenide , do not form good semiconductor-to-insulator interfaces, and thus are not suitable for MOSFETs. Research continues on creating insulators with acceptable electrical characteristics on other semiconductor materials. To overcome

7920-575: Was cheap compared to RAM. Notably, the display adapters of early personal computers stored tables of bitmapped font characters in ROM. This usually meant that the text display font could not be changed interactively. This was the case for both the CGA and MDA adapters available with the IBM PC XT. The use of ROM to store such small amounts of data has disappeared almost completely in modern general-purpose computers. However, NAND Flash has taken over

8010-468: Was connected with a diode to that row. A diode matrix ROM was used in many computers in the 1960s and 70s, as well as electronic desk calculators and keyboard matrix circuits for computer terminals . A keyboard matrix circuit has a very similar grid of diodes, but is used differently. The microsequencer of many early computers, perhaps starting with the Whirlwind I , simply activated each row of

8100-408: Was not a stored-program computer as every program had to be manually wired into the machine, which could take days to weeks.) Read-only memory was simpler to implement since it needed only a mechanism to read stored values, and not to change them in-place, and thus could be implemented with very crude electromechanical devices (see historical examples below). With the advent of integrated circuits in

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