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108-434: FinFET is a type of non-planar transistor , or "3D" transistor. It is the basis for modern nanoelectronic semiconductor device fabrication . Microchips utilizing FinFET gates first became commercialized in the first half of the 2010s, and became the dominant gate design at 14 nm , 10 nm and 7 nm process nodes . It is common for a single FinFET transistor to contain several fins, arranged side by side and all covered by

216-625: A band gap of zero and thus cannot be used in transistors because of its constant conductivity, an inability to turn off. The zigzag edges of the nanoribbons introduce localized energy states in the conduction and valence bands and thus a bandgap that enables switching when fabricated as a transistor. As an example, a typical GNR of width of 10 nm has a desirable bandgap energy of 0.4 eV. ) More research will need to be performed, however, on sub-50 nm graphene layers, as its resistivity value increases and thus electron mobility decreases. In April 2005, Gordon Moore stated in an interview that

324-501: A field-effect transistor , or may have two kinds of charge carriers in bipolar junction transistor devices. Compared with the vacuum tube , transistors are generally smaller and require less power to operate. Certain vacuum tubes have advantages over transistors at very high operating frequencies or high operating voltages, such as Traveling-wave tubes and Gyrotrons . Many types of transistors are made to standardized specifications by multiple manufacturers. The thermionic triode ,

432-532: A p-n-p transistor symbol, the arrow " P oints i N P roudly". However, this does not apply to MOSFET-based transistor symbols as the arrow is typically reversed (i.e. the arrow for the n-p-n points inside). The field-effect transistor , sometimes called a unipolar transistor , uses either electrons (in n-channel FET ) or holes (in p-channel FET ) for conduction. The four terminals of the FET are named source , gate , drain , and body ( substrate ). On most FETs,

540-542: A self-fulfilling prophecy . The doubling period is often misquoted as 18 months because of a separate prediction by Moore's colleague, Intel executive David House . In 1975, House noted that Moore's revised law of doubling transistor count every 2 years in turn implied that computer chip performance would roughly double every 18 months (with no increase in power consumption). Mathematically, Moore's law predicted that transistor count would double every 2 years due to shrinking transistor dimensions and other improvements. As

648-476: A vacuum tube invented in 1907, enabled amplified radio technology and long-distance telephony . The triode, however, was a fragile device that consumed a substantial amount of power. In 1909, physicist William Eccles discovered the crystal diode oscillator . Physicist Julius Edgar Lilienfeld filed a patent for a field-effect transistor (FET) in Canada in 1925, intended as a solid-state replacement for

756-440: A 16   nm process, TSMC began production of a 16   nm FinFET process, and Samsung Electronics began production of a 10   nm process. TSMC began production of a 7 nm process in 2017, and Samsung began production of a 5 nm process in 2018. In 2019, Samsung announced plans for the commercial production of a 3   nm GAAFET process by 2021. FD-SOI (Fully Depleted Silicon On Insulator ) has been seen as

864-537: A 1980 patent describing the planar XMOS transistor. Sekigawa fabricated the XMOS transistor with Yutaka Hayashi at the ETL in 1984. They demonstrated that short-channel effects can be significantly reduced by sandwiching a fully depleted silicon-on-insulator (SOI) device between two gate electrodes connected together. The first FinFET transistor type was called a "Depleted Lean-channel Transistor" (DELTA) transistor, which

972-800: A December 2000 paper, used to describe a non-planar, double-gate transistor built on an SOI substrate. In 2006, a team of Korean researchers from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center developed a 3 nm transistor, the world's smallest nanoelectronic device, based on gate-all-around (GAA) FinFET technology. In 2011, Rice University researchers Masoud Rostami and Kartik Mohanram demonstrated that FinFETs can have two electrically independent gates, which gives circuit designers more flexibility to design with efficient, low-power gates. In 2020, Chenming Hu received

1080-479: A basic measure of value for a digital camera, demonstrating the historical linearity (on a log scale) of this market and the opportunity to predict the future trend of digital camera price, LCD and LED screens, and resolution. The great Moore's law compensator (TGMLC) , also known as Wirth's law – generally is referred to as software bloat and is the principle that successive generations of computer software increase in size and complexity, thereby offsetting

1188-459: A consequence of shrinking dimensions, Dennard scaling predicted that power consumption per unit area would remain constant. Combining these effects, David House deduced that computer chip performance would roughly double every 18 months. Also due to Dennard scaling, this increased performance would not be accompanied by increased power, i.e., the energy-efficiency of silicon -based computer chips roughly doubles every 18 months. Dennard scaling ended in

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1296-578: A device had been built. In 1934, inventor Oskar Heil patented a similar device in Europe. From November 17 to December 23, 1947, John Bardeen and Walter Brattain at AT&T 's Bell Labs in Murray Hill, New Jersey , performed experiments and observed that when two gold point contacts were applied to a crystal of germanium , a signal was produced with the output power greater than the input. Solid State Physics Group leader William Shockley saw

1404-483: A factor of two per year". Dennard scaling – This posits that power usage would decrease in proportion to area (both voltage and current being proportional to length) of transistors. Combined with Moore's law, performance per watt would grow at roughly the same rate as transistor density, doubling every 1–2 years. According to Dennard scaling transistor dimensions would be scaled by 30% (0.7×) every technology generation, thus reducing their area by 50%. This would reduce

1512-600: A few hundred milliwatts, but power and audio fidelity gradually increased as better transistors became available and amplifier architecture evolved. Modern transistor audio amplifiers of up to a few hundred watts are common and relatively inexpensive. Before transistors were developed, vacuum (electron) tubes (or in the UK "thermionic valves" or just "valves") were the main active components in electronic equipment. The key advantages that have allowed transistors to replace vacuum tubes in most applications are Transistors may have

1620-425: A field-effect transistor (FET) by trying to modulate the conductivity of a semiconductor, but was unsuccessful, mainly due to problems with the surface states , the dangling bond , and the germanium and copper compound materials. Trying to understand the mysterious reasons behind this failure led them instead to invent the bipolar point-contact and junction transistors . In 1948, the point-contact transistor

1728-891: A functional transistor. Below are several non-silicon substitutes in the fabrication of small nanometer transistors. One proposed material is indium gallium arsenide , or InGaAs. Compared to their silicon and germanium counterparts, InGaAs transistors are more promising for future high-speed, low-power logic applications. Because of intrinsic characteristics of III–V compound semiconductors , quantum well and tunnel effect transistors based on InGaAs have been proposed as alternatives to more traditional MOSFET designs. Biological computing research shows that biological material has superior information density and energy efficiency compared to silicon-based computing. Various forms of graphene are being studied for graphene electronics , e.g. graphene nanoribbon transistors have shown promise since its appearance in publications in 2008. (Bulk graphene has

1836-555: A fundamental limit. By then they'll be able to make bigger chips and have transistor budgets in the billions. In 2016 the International Technology Roadmap for Semiconductors , after using Moore's Law to drive the industry since 1998, produced its final roadmap. It no longer centered its research and development plan on Moore's law. Instead, it outlined what might be called the More than Moore strategy in which

1944-426: A log–linear relationship between device complexity (higher circuit density at reduced cost) and time. In a 2015 interview, Moore noted of the 1965 article: "... I just did a wild extrapolation saying it's going to continue to double every year for the next 10 years." One historian of the law cites Stigler's law of eponymy , to introduce the fact that the regular doubling of components was known to many working in

2052-578: A non-planar tri-gate FinFET at 22 nm in 2012 that is faster and consumes less power than a conventional planar transistor. The rate of performance improvement for single-core microprocessors has slowed significantly. Single-core performance was improving by 52% per year in 1986–2003 and 23% per year in 2003–2011, but slowed to just seven percent per year in 2011–2018. Quality adjusted price of IT equipment – The price of information technology (IT), computers and peripheral equipment, adjusted for quality and inflation, declined 16% per year on average over

2160-412: A particular type, varies depending on the collector current. In the example of a light-switch circuit, as shown, the resistor is chosen to provide enough base current to ensure the transistor is saturated. The base resistor value is calculated from the supply voltage, transistor C-E junction voltage drop, collector current, and amplification factor beta. The common-emitter amplifier is designed so that

2268-422: A physical limit, some forecasters are optimistic about the continuation of technological progress in a variety of other areas, including new chip architectures, quantum computing, and AI and machine learning. Nvidia CEO Jensen Huang declared Moore's law dead in 2022; several days later, Intel CEO Pat Gelsinger countered with the opposite claim. Digital electronics have contributed to world economic growth in

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2376-433: A potential low cost alternative to FinFETs. Commercial production of nanoelectronic FinFET semiconductor memory began in the 2010s. In 2013, SK Hynix began mass-production of 16   nm NAND flash memory, and Samsung Electronics began production of 10   nm multi-level cell (MLC) NAND flash memory. In 2017, TSMC began production of SRAM memory using a 7 nm process. Transistor A transistor

2484-467: A silicon MOS transistor in 1959 and successfully demonstrated a working MOS device with their Bell Labs team in 1960. Their team included E. E. LaBate and E. I. Povilonis who fabricated the device; M. O. Thurston, L. A. D’Asaro, and J. R. Ligenza who developed the diffusion processes, and H. K. Gummel and R. Lindner who characterized the device. With its high scalability , much lower power consumption, and higher density than bipolar junction transistors,

2592-443: A single quarter-square-inch (~  1.6 cm ) semiconductor. The complexity for minimum component costs has increased at a rate of roughly a factor of two per year. Certainly over the short term this rate can be expected to continue, if not to increase. Over the longer term, the rate of increase is a bit more uncertain, although there is no reason to believe it will not remain nearly constant for at least 10 years. Moore posited

2700-605: A small change in voltage ( V in ) changes the small current through the base of the transistor whose current amplification combined with the properties of the circuit means that small swings in V in produce large changes in V out . Various configurations of single transistor amplifiers are possible, with some providing current gain, some voltage gain, and some both. From mobile phones to televisions , vast numbers of products include amplifiers for sound reproduction , radio transmission , and signal processing . The first discrete-transistor audio amplifiers barely supplied

2808-440: A type of 3D non-planar multi-gate MOSFET, originated from the research of Digh Hisamoto and his team at Hitachi Central Research Laboratory in 1989. Because transistors are the key active components in practically all modern electronics , many people consider them one of the 20th century's greatest inventions. The invention of the first transistor at Bell Labs was named an IEEE Milestone in 2009. Other Milestones include

2916-416: A weaker input signal, acting as an amplifier . It can also be used as an electrically controlled switch , where the amount of current is determined by other circuit elements. There are two types of transistors, with slight differences in how they are used: The top image in this section represents a typical bipolar transistor in a circuit. A charge flows between emitter and collector terminals depending on

3024-461: A working bipolar NPN junction amplifying germanium transistor. Bell announced the discovery of this new "sandwich" transistor in a press release on July 4, 1951. The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating at frequencies up to 60 MHz . They were made by etching depressions into an n-type germanium base from both sides with jets of indium(III) sulfate until it

3132-585: A year 2000 computer. Library expansion – was calculated in 1945 by Fremont Rider to double in capacity every 16 years, if sufficient space were made available. He advocated replacing bulky, decaying printed works with miniaturized microform analog photographs, which could be duplicated on-demand for library patrons or other institutions. He did not foresee the digital technology that would follow decades later to replace analog microform with digital imaging, storage, and transmission media. Automated, potentially lossless digital technologies allowed vast increases in

3240-507: Is "a natural part of the history of Moore's law". The rate of improvement in physical dimensions known as Dennard scaling also ended in the mid-2000s. As a result, much of the semiconductor industry has shifted its focus to the needs of major computing applications rather than semiconductor scaling. Nevertheless, leading semiconductor manufacturers TSMC and Samsung Electronics have claimed to keep pace with Moore's law with 10 , 7 , and 5 nm nodes in mass production. As

3348-418: Is a semiconductor device used to amplify or switch electrical signals and power . It is one of the basic building blocks of modern electronics . It is composed of semiconductor material , usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because

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3456-400: Is another version, called Butters' Law of Photonics, a formulation that deliberately parallels Moore's law. Butters' law says that the amount of data coming out of an optical fiber is doubling every nine months. Thus, the cost of transmitting a bit over an optical network decreases by half every nine months. The availability of wavelength-division multiplexing (sometimes called WDM) increased

3564-496: Is called split transistor . This enables more refined control of the operation of the transistor. Indonesian engineer Effendi Leobandung, while working at the University of Minnesota , published a paper with Stephen Y. Chou at the 54th Device Research Conference in 1996 outlining the benefit of cutting a wide CMOS transistor into many channels with narrow width to improve device scaling and increase device current by increasing

3672-481: Is not observed in modern devices, for example, at the 65 nm technology node. For low noise at narrow bandwidth , the higher input resistance of the FET is advantageous. FETs are divided into two families: junction FET ( JFET ) and insulated gate FET (IGFET). The IGFET is more commonly known as a metal–oxide–semiconductor FET ( MOSFET ), reflecting its original construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs,

3780-421: Is often easier and cheaper to use a standard microcontroller and write a computer program to carry out a control function than to design an equivalent mechanical system. A transistor can use a small signal applied between one pair of its terminals to control a much larger signal at another pair of terminals, a property called gain . It can produce a stronger output signal, a voltage or current, proportional to

3888-409: Is the observation that the number of transistors in an integrated circuit (IC) doubles about every two years. Moore's law is an observation and projection of a historical trend. Rather than a law of physics , it is an empirical relationship . It is an experience-curve law , a type of law quantifying efficiency gains from experience in production. The observation is named after Gordon Moore ,

3996-572: The 22 nm feature width around 2012, and continuing at 14 nm . Pat Gelsinger, Intel CEO, stated at the end of 2023 that "we're no longer in the golden era of Moore's Law, it's much, much harder now, so we're probably doubling effectively closer to every three years now, so we've definitely seen a slowing." The physical limits to transistor scaling have been reached due to source-to-drain leakage, limited gate metals and limited options for channel material. Other approaches are being investigated, which do not rely on physical scaling. These include

4104-516: The Defense Advanced Research Projects Agency (DARPA), which in 1997 awarded a contract to a research group at the University of California, Berkeley to develop a deep sub-micron transistor based on DELTA technology. The group was led by Hisamoto along with TSMC 's Chenming Hu . The team made the following breakthroughs between 1998 and 2004. They coined the term "FinFET" (fin field-effect transistor) in

4212-627: The IEEE Medal of Honor award for his development of the FinFET, which the Institute of Electrical and Electronics Engineers (IEEE) credited with taking transistors to the third dimension and extending Moore's law . The industry's first 25 nanometer transistor operating on just 0.7 volts was demonstrated in December 2002 by TSMC . The "Omega FinFET" design, named after the similarity between

4320-483: The gate-all-around MOSFET ( GAAFET ) structure has even better gate control. Microprocessor architects report that semiconductor advancement has slowed industry-wide since around 2010, below the pace predicted by Moore's law. Brian Krzanich, the former CEO of Intel, announced, "Our cadence today is closer to two and a half years than two." Intel stated in 2015 that improvements in MOSFET devices have slowed, starting at

4428-493: The metal–oxide–semiconductor field-effect transistor (MOSFET), the MOSFET was invented at Bell Labs between 1955 and 1960. Transistors revolutionized the field of electronics and paved the way for smaller and cheaper radios , calculators , computers , and other electronic devices. Most transistors are made from very pure silicon , and some from germanium , but certain other semiconductor materials are sometimes used. A transistor may have only one kind of charge carrier in

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4536-399: The surface state barrier that prevented the external electric field from penetrating the material. In 1955, Carl Frosch and Lincoln Derick accidentally grew a layer of silicon dioxide over the silicon wafer, for which they observed surface passivation effects. By 1957 Frosch and Derick, using masking and predeposition, were able to manufacture silicon dioxide field effect transistors;

4644-468: The 2000s. Koomey later showed that a similar rate of efficiency improvement predated silicon chips and Moore's law, for technologies such as vacuum tubes. Microprocessor architects report that since around 2010, semiconductor advancement has slowed industry-wide below the pace predicted by Moore's law. Brian Krzanich , the former CEO of Intel, cited Moore's 1975 revision as a precedent for the current deceleration, which results from technical challenges and

4752-650: The Greek letter " Omega " and the shape in which the gate wraps around the source/drain structure, has a gate delay of just 0.39 picosecond (ps) for the N-type transistor and 0.88 ps for the P-type. In 2004, Samsung demonstrated a "Bulk FinFET" design, which made it possible to mass-produce FinFET devices. They demonstrated dynamic random-access memory ( DRAM ) manufactured with a 90   nm Bulk FinFET process. In 2011, Intel demonstrated tri-gate transistors , where

4860-509: The JFET gate forms a p–n diode with the channel which lies between the source and drains. Functionally, this makes the n-channel JFET the solid-state equivalent of the vacuum tube triode which, similarly, forms a diode between its grid and cathode . Also, both devices operate in the depletion-mode , they both have a high input impedance, and they both conduct current under the control of an input voltage. Moore%27s law Moore's law

4968-412: The MOSFET made it possible to build high-density integrated circuits, allowing the integration of more than 10,000 transistors in a single IC. Bardeen and Brattain's 1948 inversion layer concept forms the basis of CMOS technology today. The CMOS (complementary MOS ) was invented by Chih-Tang Sah and Frank Wanlass at Fairchild Semiconductor in 1963. The first report of a floating-gate MOSFET

5076-775: The Regency Division of Industrial Development Engineering Associates, I.D.E.A. and Texas Instruments of Dallas, Texas, the TR-1 was manufactured in Indianapolis, Indiana. It was a near pocket-sized radio with four transistors and one germanium diode. The industrial design was outsourced to the Chicago firm of Painter, Teague and Petertil. It was initially released in one of six colours: black, ivory, mandarin red, cloud grey, mahogany and olive green. Other colours shortly followed. The first production all-transistor car radio

5184-431: The basis of modern digital electronics since the late 20th century, paving the way for the digital age . The US Patent and Trademark Office calls it a "groundbreaking invention that transformed life and culture around the world". Its ability to be mass-produced by a highly automated process ( semiconductor device fabrication ), from relatively basic materials, allows astonishingly low per-transistor costs. MOSFETs are

5292-404: The body is connected to the source inside the package, and this will be assumed for the following description. In a FET, the drain-to-source current flows via a conducting channel that connects the source region to the drain region. The conductivity is varied by the electric field that is produced when a voltage is applied between the gate and source terminals, hence the current flowing between

5400-498: The breakdown is that at small sizes, current leakage poses greater challenges, and also causes the chip to heat up, which creates a threat of thermal runaway and therefore, further increases energy costs. The breakdown of Dennard scaling prompted a greater focus on multicore processors, but the gains offered by switching to more cores are lower than the gains that would be achieved had Dennard scaling continued. In another departure from Dennard scaling, Intel microprocessors adopted

5508-508: The capacity that could be placed on a single fiber by as much as a factor of 100. Optical networking and dense wavelength-division multiplexing (DWDM) is rapidly bringing down the cost of networking, and further progress seems assured. As a result, the wholesale price of data traffic collapsed in the dot-com bubble . Nielsen's Law says that the bandwidth available to users increases by 50% annually. Pixels per dollar – Similarly, Barry Hendy of Kodak Australia has plotted pixels per dollar as

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5616-832: The cause of the productivity acceleration to technological innovations in the production of semiconductors that sharply reduced the prices of such components and of the products that contain them (as well as expanding the capabilities of such products)." The primary negative implication of Moore's law is that obsolescence pushes society up against the Limits to Growth . As technologies continue to rapidly "improve", they render predecessor technologies obsolete. In situations in which security and survivability of hardware or data are paramount, or in which resources are limited, rapid obsolescence often poses obstacles to smooth or continued operations. Several measures of digital technology are improving at exponential rates related to Moore's law, including

5724-469: The co-founder of Fairchild Semiconductor and Intel (and former CEO of the latter), who in 1965 noted that the number of components per integrated circuit had been doubling every year , and projected this rate of growth would continue for at least another decade. In 1975, looking forward to the next decade, he revised the forecast to doubling every two years, a compound annual growth rate (CAGR) of 41%. Moore's empirical evidence did not directly imply that

5832-437: The collector to the emitter. If the voltage difference between the collector and emitter were zero (or near zero), the collector current would be limited only by the load resistance (light bulb) and the supply voltage. This is called saturation because the current is flowing from collector to emitter freely. When saturated, the switch is said to be on . The use of bipolar transistors for switching applications requires biasing

5940-455: The concept of a field-effect transistor (FET) in 1926, but it was not possible to construct a working device at that time. The first working device was a point-contact transistor invented in 1947 by physicists John Bardeen , Walter Brattain , and William Shockley at Bell Labs who shared the 1956 Nobel Prize in Physics for their achievement. The most widely used type of transistor is

6048-445: The concept of an inversion layer, forms the basis of CMOS and DRAM technology today. In the early years of the semiconductor industry , companies focused on the junction transistor , a relatively bulky device that was difficult to mass-produce , limiting it to several specialized applications. Field-effect transistors (FETs) were theorized as potential alternatives, but researchers could not get them to work properly, largely due to

6156-449: The controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits . Because transistors are the key active components in practically all modern electronics , many people consider them one of the 20th century's greatest inventions. Physicist Julius Edgar Lilienfeld proposed

6264-409: The cost of computer power to the consumer falls, the cost for producers to fulfill Moore's law follows an opposite trend: R&D, manufacturing, and test costs have increased steadily with each new generation of chips. The cost of the tools, principally EUVL ( Extreme ultraviolet lithography ), used to manufacture chips doubles every 4 years. Rising manufacturing costs are an important consideration for

6372-559: The current in the base. Because the base and emitter connections behave like a semiconductor diode, a voltage drop develops between them. The amount of this drop, determined by the transistor's material, is referred to as V BE . (Base Emitter Voltage) Transistors are commonly used in digital circuits as electronic switches which can be either in an "on" or "off" state, both for high-power applications such as switched-mode power supplies and for low-power applications such as logic gates . Important parameters for this application include

6480-456: The current switched, the voltage handled, and the switching speed, characterized by the rise and fall times . In a switching circuit, the goal is to simulate, as near as possible, the ideal switch having the properties of an open circuit when off, the short circuit when on, and an instantaneous transition between the two states. Parameters are chosen such that the "off" output is limited to leakage currents too small to affect connected circuitry,

6588-812: The delay by 30% (0.7×) and therefore increase operating frequency by about 40% (1.4×). Finally, to keep electric field constant, voltage would be reduced by 30%, reducing energy by 65% and power (at 1.4× frequency) by 50%. Therefore, in every technology generation transistor density would double, circuit becomes 40% faster, while power consumption (with twice the number of transistors) stays the same. Dennard scaling ended in 2005–2010, due to leakage currents. The exponential processor transistor growth predicted by Moore does not always translate into exponentially greater practical CPU performance. Since around 2005–2007, Dennard scaling has ended, so even though Moore's law continued after that, it has not yielded proportional dividends in improved performance. The primary reason cited for

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6696-450: The density of transistors at which the cost per transistor is the lowest. As more transistors are put on a chip, the cost to make each transistor decreases, but the chance that the chip will not work due to a defect increases. In 1965, Moore examined the density of transistors at which cost is minimized, and observed that, as transistors were made smaller through advances in photolithography , this number would increase at "a rate of roughly

6804-400: The disk media, thermal stability, and writability using available magnetic fields. Fiber-optic capacity – The number of bits per second that can be sent down an optical fiber increases exponentially, faster than Moore's law. Keck's law , in honor of Donald Keck . Network capacity – According to Gerald Butters, the former head of Lucent's Optical Networking Group at Bell Labs, there

6912-460: The drain and source is controlled by the voltage applied between the gate and source. As the gate–source voltage ( V GS ) is increased, the drain–source current ( I DS ) increases exponentially for V GS below threshold, and then at a roughly quadratic rate: ( I DS ∝ ( V GS − V T ) , where V T is the threshold voltage at which drain current begins) in the " space-charge-limited " region above threshold. A quadratic behavior

7020-411: The effective device width. This structure is what a modern FinFET looks like. Although some device width is sacrificed by cutting it into narrow widths, the conduction of the side wall of narrow fins more than make up for the loss, for tall fins. The device had a 35 nm channel width and 70 nm channel length. The potential of Digh Hisamoto's research on DELTA transistors drew the attention of

7128-436: The field. In 1974, Robert H. Dennard at IBM recognized the rapid MOSFET scaling technology and formulated what became known as Dennard scaling , which describes that as MOS transistors get smaller, their power density stays constant such that the power use remains in proportion with area. Evidence from the semiconductor industry shows that this inverse relationship between power density and areal density broke down in

7236-463: The first planar transistors, in which drain and source were adjacent at the same surface. They showed that silicon dioxide insulated, protected silicon wafers and prevented dopants from diffusing into the wafer. After this, J.R. Ligenza and W.G. Spitzer studied the mechanism of thermally grown oxides, fabricated a high quality Si/ SiO 2 stack and published their results in 1960. Following this research, Mohamed Atalla and Dawon Kahng proposed

7344-454: The five decades from 1959 to 2009. The pace accelerated, however, to 23% per year in 1995–1999 triggered by faster IT innovation, and later, slowed to 2% per year in 2010–2013. While quality-adjusted microprocessor price improvement continues, the rate of improvement likewise varies, and is not linear on a log scale. Microprocessor price improvement accelerated during the late 1990s, reaching 60% per year (halving every nine months) versus

7452-454: The following limitations: Transistors are categorized by Hence, a particular transistor may be described as silicon, surface-mount, BJT, NPN, low-power, high-frequency switch . Convenient mnemonic to remember the type of transistor (represented by an electrical symbol ) involves the direction of the arrow. For the BJT , on an n-p-n transistor symbol, the arrow will " N ot P oint i N" . On

7560-666: The gate surrounds the channel on three sides, allowing for increased energy efficiency and lower gate delay—and thus greater performance—over planar transistors. Commercially produced chips at 22 nm and below have generally utilised FinFET gate designs (but planar processes do exist down to 18 nm, with 12 nm in development). Intel's tri-gate variant were announced at 22 nm in 2011 for its Ivy Bridge microarchitecture . These devices shipped from 2012 onwards. From 2014 onwards, at 14 nm (or 16 nm) major foundries (TSMC, Samsung, GlobalFoundries ) utilised FinFET designs. In 2013, SK Hynix began commercial mass-production of

7668-442: The historical trend would continue, nevertheless his prediction has held since 1975 and has since become known as a "law". Moore's prediction has been used in the semiconductor industry to guide long-term planning and to set targets for research and development , thus functioning to some extent as a self-fulfilling prophecy . Advancements in digital electronics , such as the reduction in quality-adjusted microprocessor prices,

7776-450: The idea of a field-effect transistor that used an electric field as a "grid" was not new. Instead, what Bardeen, Brattain, and Shockley invented in 1947 was the first point-contact transistor . To acknowledge this accomplishment, Shockley, Bardeen and Brattain jointly received the 1956 Nobel Prize in Physics "for their researches on semiconductors and their discovery of the transistor effect". Shockley's team initially attempted to build

7884-547: The increase in memory capacity ( RAM and flash ), the improvement of sensors , and even the number and size of pixels in digital cameras , are strongly linked to Moore's law. These ongoing changes in digital electronics have been a driving force of technological and social change, productivity , and economic growth. Industry experts have not reached a consensus on exactly when Moore's law will cease to apply. Microprocessor architects report that semiconductor advancement has slowed industry-wide since around 2010, slightly below

7992-418: The inventions of the junction transistor in 1948 and the MOSFET in 1959. The MOSFET is by far the most widely used transistor, in applications ranging from computers and electronics to communications technology such as smartphones . It has been considered the most important transistor, possibly the most important invention in electronics, and the device that enabled modern electronics. It has been

8100-444: The key economic indicator of innovation." Moore's law describes a driving force of technological and social change, productivity, and economic growth. An acceleration in the rate of semiconductor progress contributed to a surge in U.S. productivity growth, which reached 3.4% per year in 1997–2004, outpacing the 1.6% per year during both 1972–1996 and 2005–2013. As economist Richard G. Anderson notes, "Numerous studies have traced

8208-469: The key technical challenges of engineering future nanoscale transistors is the design of gates. As device dimensions shrink, controlling the current flow in the thin channel becomes more difficult. Modern nanoscale transistors typically take the form of multi-gate MOSFETs , with the FinFET being the most common nanoscale transistor. The FinFET has gate dielectric on three sides of the channel. In comparison,

8316-400: The late twentieth and early twenty-first centuries. The primary driving force of economic growth is the growth of productivity , which Moore's law factors into. Moore (1995) expected that "the rate of technological progress is going to be controlled from financial realities". The reverse could and did occur around the late-1990s, however, with economists reporting that "Productivity growth is

8424-613: The mechanical encoding from punched metal cards. The first prototype pocket transistor radio was shown by INTERMETALL, a company founded by Herbert Mataré in 1952, at the Internationale Funkausstellung Düsseldorf from August 29 to September 6, 1953. The first production-model pocket transistor radio was the Regency TR-1 , released in October 1954. Produced as a joint venture between

8532-427: The mid-2000s. At the 1975 IEEE International Electron Devices Meeting , Moore revised his forecast rate, predicting semiconductor complexity would continue to double annually until about 1980, after which it would decrease to a rate of doubling approximately every two years. He outlined several contributing factors for this exponential behavior: Shortly after 1975, Caltech professor Carver Mead popularized

8640-486: The most complex chips. The graph at the top of this article shows this trend holds true today. As of 2017 , the commercially available processor possessing the highest number of transistors is the 48 core Centriq with over 18 billion transistors. Density at minimum cost per transistor – This is the formulation given in Moore's 1965 paper. It is not just about the density of transistors that can be achieved, but about

8748-927: The most numerously produced artificial objects in history, with more than 13 sextillion manufactured by 2018. Although several companies each produce over a billion individually packaged (known as discrete ) MOS transistors every year, the vast majority are produced in integrated circuits (also known as ICs , microchips, or simply chips ), along with diodes , resistors , capacitors and other electronic components , to produce complete electronic circuits. A logic gate consists of up to about 20 transistors, whereas an advanced microprocessor , as of 2022, may contain as many as 57 billion MOSFETs. Transistors are often organized into logic gates in microprocessors to perform computation. The transistor's low cost, flexibility and reliability have made it ubiquitous. Transistorized mechatronic circuits have replaced electromechanical devices in controlling appliances and machinery. It

8856-502: The needs of applications drive chip development, rather than a focus on semiconductor scaling. Application drivers range from smartphones to AI to data centers. IEEE began a road-mapping initiative in 2016, "Rebooting Computing", named the International Roadmap for Devices and Systems (IRDS). Some forecasters, including Gordon Moore, predict that Moore's law will end by around 2025. Although Moore's Law will reach

8964-511: The pace predicted by Moore's law. In September 2022, Nvidia CEO Jensen Huang considered Moore's law dead, while Intel CEO Pat Gelsinger was of the opposite view. In 1959, Douglas Engelbart studied the projected downscaling of integrated circuit (IC) size, publishing his results in the article "Microelectronics, and the Art of Similitude". Engelbart presented his findings at the 1960 International Solid-State Circuits Conference , where Moore

9072-511: The performance gains predicted by Moore's law. In a 2008 article in InfoWorld , Randall C. Kennedy, formerly of Intel, introduces this term using successive versions of Microsoft Office between the year 2000 and 2007 as his premise. Despite the gains in computational performance during this time period according to Moore's law, Office 2007 performed the same task at half the speed on a prototypical year 2007 computer as compared to Office 2000 on

9180-548: The potential in this, and over the next few months worked to greatly expand the knowledge of semiconductors . The term transistor was coined by John R. Pierce as a contraction of the term transresistance . According to Lillian Hoddeson and Vicki Daitch, Shockley proposed that Bell Labs' first patent for a transistor should be based on the field-effect and that he be named as the inventor. Having unearthed Lilienfeld's patents that went into obscurity years earlier, lawyers at Bell Labs advised against Shockley's proposal because

9288-550: The projection cannot be sustained indefinitely: "It can't continue forever. The nature of exponentials is that you push them out and eventually disaster happens." He also noted that transistors eventually would reach the limits of miniaturization at atomic levels: In terms of size [of transistors] you can see that we're approaching the size of atoms which is a fundamental barrier, but it'll be two or three generations before we get that far—but that's as far out as we've ever been able to see. We have another 10 to 20 years before we reach

9396-437: The rapid (in some cases hyperexponential) decreases in cost, and increases in performance, of a variety of technologies, including DNA sequencing, DNA synthesis, and a range of physical and computational tools used in protein expression and in determining protein structures. Eroom's law – is a pharmaceutical drug development observation that was deliberately written as Moore's Law spelled backwards in order to contrast it with

9504-506: The rapidity of information growth in an era that now sometimes is called the Information Age . Carlson curve – is a term coined by The Economist to describe the biotechnological equivalent of Moore's law, and is named after author Rob Carlson. Carlson accurately predicted that the doubling time of DNA sequencing technologies (measured by cost and performance) would be at least as fast as Moore's law. Carlson Curves illustrate

9612-405: The resistance of the transistor in the "on" state is too small to affect circuitry, and the transition between the two states is fast enough not to have a detrimental effect. In a grounded-emitter transistor circuit, such as the light-switch circuit shown, as the base voltage rises, the emitter and collector currents rise exponentially. The collector voltage drops because of reduced resistance from

9720-511: The same gate, that act electrically as one. The number of fins can be varied to adjust drive strength and performance, with drive strength increasing with a higher number of fins. The concept of a double-gate thin-film transistor (TFT) was proposed by H. R. Farrah ( Bendix Corporation ) and R. F. Steinberg in 1967. A double-gate MOSFET was later proposed by Toshihiro Sekigawa of the Electrotechnical Laboratory (ETL) in

9828-526: The semiconductor industry that on a semi-log plot approximates a straight line. I hesitate to review its origins and by doing so restrict its definition." Hard disk drive areal density – A similar prediction (sometimes called Kryder's law ) was made in 2005 for hard disk drive areal density . The prediction was later viewed as over-optimistic. Several decades of rapid progress in areal density slowed around 2010, from 30 to 100% per year to 10–15% per year, because of noise related to smaller grain size of

9936-419: The size, cost, density, and speed of components. Moore wrote only about the density of components, "a component being a transistor, resistor, diode or capacitor", at minimum cost. Transistors per integrated circuit – The most popular formulation is of the doubling of the number of transistors on ICs every two years. At the end of the 1970s, Moore's law became known as the limit for the number of transistors on

10044-461: The spin state of electron spintronics , tunnel junctions , and advanced confinement of channel materials via nano-wire geometry. Spin-based logic and memory options are being developed actively in labs. The vast majority of current transistors on ICs are composed principally of doped silicon and its alloys. As silicon is fabricated into single nanometer transistors, short-channel effects adversely change desired material properties of silicon as

10152-825: The sustaining of Moore's law. This led to the formulation of Moore's second law , also called Rock's law (named after Arthur Rock ), which is that the capital cost of a semiconductor fabrication plant also increases exponentially over time. Numerous innovations by scientists and engineers have sustained Moore's law since the beginning of the IC era. Some of the key innovations are listed below, as examples of breakthroughs that have advanced integrated circuit and semiconductor device fabrication technology, allowing transistor counts to grow by more than seven orders of magnitude in less than five decades. Computer industry technology road maps predicted in 2001 that Moore's law would continue for several generations of semiconductor chips. One of

10260-400: The term "Moore's law". Moore's law eventually came to be widely accepted as a goal for the semiconductor industry, and it was cited by competitive semiconductor manufacturers as they strove to increase processing power. Moore viewed his eponymous law as surprising and optimistic: "Moore's law is a violation of Murphy's law . Everything gets better and better." The observation was even seen as

10368-409: The transistor so that it operates between its cut-off region in the off-state and the saturation region ( on ). This requires sufficient base drive current. As the transistor provides current gain, it facilitates the switching of a relatively large current in the collector by a much smaller current into the base terminal. The ratio of these currents varies depending on the type of transistor, and even for

10476-483: The transistor, the company rushed to get its "transistron" into production for amplified use in France's telephone network, filing his first transistor patent application on August 13, 1948. The first bipolar junction transistors were invented by Bell Labs' William Shockley, who applied for patent (2,569,347) on June 26, 1948. On April 12, 1950, Bell Labs chemists Gordon Teal and Morgan Sparks successfully produced

10584-486: The triode. He filed identical patents in the United States in 1926 and 1928. However, he did not publish any research articles about his devices nor did his patents cite any specific examples of a working prototype. Because the production of high-quality semiconductor materials was still decades away, Lilienfeld's solid-state amplifier ideas would not have found practical use in the 1920s and 1930s, even if such

10692-489: The typical 30% improvement rate (halving every two years) during the years earlier and later. Laptop microprocessors in particular improved 25–35% per year in 2004–2010, and slowed to 15–25% per year in 2010–2013. The number of transistors per chip cannot explain quality-adjusted microprocessor prices fully. Moore's 1995 paper does not limit Moore's law to strict linearity or to transistor count, "The definition of 'Moore's Law' has come to refer to almost anything related to

10800-408: The widespread adoption of transistor radios. Seven million TR-63s were sold worldwide by the mid-1960s. Sony's success with transistor radios led to transistors replacing vacuum tubes as the dominant electronic technology in the late 1950s. The first working silicon transistor was developed at Bell Labs on January 26, 1954, by Morris Tanenbaum . The first production commercial silicon transistor

10908-525: Was a few ten-thousandths of an inch thick. Indium electroplated into the depressions formed the collector and emitter. AT&T first used transistors in telecommunications equipment in the No. 4A Toll Crossbar Switching System in 1953, for selecting trunk circuits from routing information encoded on translator cards. Its predecessor, the Western Electric No. 3A phototransistor , read

11016-486: Was announced by Texas Instruments in May 1954. This was the work of Gordon Teal , an expert in growing crystals of high purity, who had previously worked at Bell Labs. The basic principle of the field-effect transistor (FET) was first proposed by physicist Julius Edgar Lilienfeld when he filed a patent for a device similar to MESFET in 1926, and for an insulated-gate field-effect transistor in 1928. The FET concept

11124-521: Was developed by Chrysler and Philco corporations and was announced in the April 28, 1955, edition of The Wall Street Journal . Chrysler made the Mopar model 914HR available as an option starting in fall 1955 for its new line of 1956 Chrysler and Imperial cars, which reached dealership showrooms on October 21, 1955. The Sony TR-63, released in 1957, was the first mass-produced transistor radio, leading to

11232-543: Was first fabricated in Japan by Hitachi Central Research Laboratory 's Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto and Eiji Takeda in 1989. The gate of the transistor can cover and electrically contact the semiconductor channel fin on both the top and the sides or only on the sides. The former is called a tri-gate transistor and the latter a double-gate transistor . A double-gate transistor optionally can have each side connected to two different terminal or contacts. This variant

11340-862: Was independently invented by physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux Westinghouse , a Westinghouse subsidiary in Paris . Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II . With this knowledge, he began researching the phenomenon of "interference" in 1947. By June 1948, witnessing currents flowing through point-contacts, he produced consistent results using samples of germanium produced by Welker, similar to what Bardeen and Brattain had accomplished earlier in December 1947. Realizing that Bell Labs' scientists had already invented

11448-455: Was later also theorized by engineer Oskar Heil in the 1930s and by William Shockley in the 1940s. In 1945 JFET was patented by Heinrich Welker . Following Shockley's theoretical treatment on JFET in 1952, a working practical JFET was made in 1953 by George C. Dacey and Ian M. Ross . In 1948, Bardeen and Brattain patented the progenitor of MOSFET at Bell Labs, an insulated-gate FET (IGFET) with an inversion layer. Bardeen's patent, and

11556-521: Was made by Dawon Kahng and Simon Sze in 1967. In 1967, Bell Labs researchers Robert Kerwin, Donald Klein and John Sarace developed the self-aligned gate (silicon-gate) MOS transistor, which Fairchild Semiconductor researchers Federico Faggin and Tom Klein used to develop the first silicon-gate MOS integrated circuit . A double-gate MOSFET was first demonstrated in 1984 by Electrotechnical Laboratory researchers Toshihiro Sekigawa and Yutaka Hayashi. The FinFET (fin field-effect transistor),

11664-559: Was present in the audience. In 1965, Gordon Moore, who at the time was working as the director of research and development at Fairchild Semiconductor , was asked to contribute to the thirty-fifth anniversary issue of Electronics magazine with a prediction on the future of the semiconductor components industry over the next ten years. His response was a brief article entitled "Cramming more components onto integrated circuits". Within his editorial, he speculated that by 1975 it would be possible to contain as many as 65 000 components on

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