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88-470: The K100D features a 6-megapixel CCD sensor, coupled with an analog-to-digital converter (ADC) and a sensor-based shake reduction system within the camera body. The K110D has exactly the same features as the K100D, except it lacks built-in shake reduction. The K100D is sometimes confused with the similarly named, but more advanced, Pentax K10D . The Pentax K200D , successor to the K100D and K100D Super,

176-423: A charge amplifier , which converts the charge into a voltage . By repeating this process, the controlling circuit converts the entire contents of the array in the semiconductor to a sequence of voltages. In a digital device, these voltages are then sampled, digitized, and usually stored in memory; in an analog device (such as an analog video camera), they are processed into a continuous analog signal (e.g. by feeding

264-481: A shift register . The essence of the design was the ability to transfer charge along the surface of a semiconductor from one storage capacitor to the next. The concept was similar in principle to the bucket-brigade device (BBD), which was developed at Philips Research Labs during the late 1960s. The first experimental device demonstrating the principle was a row of closely spaced metal squares on an oxidized silicon surface electrically accessed by wire bonds. It

352-485: A CCD is the higher cost: the cell area is basically doubled, and more complex control electronics are needed. An intensified charge-coupled device (ICCD) is a CCD that is optically connected to an image intensifier that is mounted in front of the CCD. An image intensifier includes three functional elements: a photocathode , a micro-channel plate (MCP) and a phosphor screen. These three elements are mounted one close behind

440-669: A cooling system—using either thermoelectric cooling or liquid nitrogen—to cool the chip down to temperatures in the range of −65 to −95 °C (−85 to −139 °F). This cooling system adds additional costs to the EMCCD imaging system and may yield condensation problems in the application. However, high-end EMCCD cameras are equipped with a permanent hermetic vacuum system confining the chip to avoid condensation issues. The low-light capabilities of EMCCDs find use in astronomy and biomedical research, among other fields. In particular, their low noise at high readout speeds makes them very useful for

528-428: A factor of 2–3 compared to the surface-channel CCD. The gate oxide, i.e. the capacitor dielectric , is grown on top of the epitaxial layer and substrate. Later in the process, polysilicon gates are deposited by chemical vapor deposition , patterned with photolithography , and etched in such a way that the separately phased gates lie perpendicular to the channels. The channels are further defined by utilization of

616-555: A few percent. That image can then be read out slowly from the storage region while a new image is integrating or exposing in the active area. Frame-transfer devices typically do not require a mechanical shutter and were a common architecture for early solid-state broadcast cameras. The downside to the frame-transfer architecture is that it requires twice the silicon real estate of an equivalent full-frame device; hence, it costs roughly twice as much. The interline architecture extends this concept one step further and masks every other column of

704-429: A full-frame device, all of the image area is active, and there is no electronic shutter. A mechanical shutter must be added to this type of sensor or the image smears as the device is clocked or read out. With a frame-transfer CCD, half of the silicon area is covered by an opaque mask (typically aluminum). The image can be quickly transferred from the image area to the opaque area or storage region with acceptable smear of

792-592: A gain register is placed between the shift register and the output amplifier. The gain register is split up into a large number of stages. In each stage, the electrons are multiplied by impact ionization in a similar way to an avalanche diode . The gain probability at every stage of the register is small ( P < 2%), but as the number of elements is large (N > 500), the overall gain can be very high ( g = ( 1 + P ) N {\displaystyle g=(1+P)^{N}} ), with single input electrons giving many thousands of output electrons. Reading

880-415: A high speed compared to mass storage which is slower but less expensive per bit and higher in capacity. Besides storing opened programs and data being actively processed, computer memory serves as a mass storage cache and write buffer to improve both reading and writing performance. Operating systems borrow RAM capacity for caching so long as it is not needed by running software. If needed, contents of

968-401: A large lateral electric field from one gate to the next. This provides an additional driving force to aid in transfer of the charge packets. The CCD image sensors can be implemented in several different architectures. The most common are full-frame, frame-transfer, and interline. The distinguishing characteristic of each of these architectures is their approach to the problem of shuttering. In

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1056-407: A neighboring capacitor. CCD sensors are a major technology used in digital imaging . In a CCD image sensor , pixels are represented by p-doped metal–oxide–semiconductor (MOS) capacitors . These MOS capacitors , the basic building blocks of a CCD, are biased above the threshold for inversion when image acquisition begins, allowing the conversion of incoming photons into electron charges at

1144-399: A non-equilibrium state called deep depletion. Then, when electron–hole pairs are generated in the depletion region, they are separated by the electric field, the electrons move toward the surface, and the holes move toward the substrate. Four pair-generation processes can be identified: The last three processes are known as dark-current generation, and add noise to the image; they can limit

1232-417: A p+ doped region underlying them, providing a further barrier to the electrons in the charge packets (this discussion of the physics of CCD devices assumes an electron transfer device, though hole transfer is possible). The clocking of the gates, alternately high and low, will forward and reverse bias the diode that is provided by the buried channel (n-doped) and the epitaxial layer (p-doped). This will cause

1320-409: A reflective material such as aluminium. When the exposure time is up, the cells are transferred very rapidly to the hidden area. Here, safe from any incoming light, cells can be read out at any speed one deems necessary to correctly measure the cells' charge. At the same time, the exposed part of the CCD is collecting light again, so no delay occurs between successive exposures. The disadvantage of such

1408-445: A signal from a CCD gives a noise background, typically a few electrons. In an EMCCD, this noise is superimposed on many thousands of electrons rather than a single electron; the devices' primary advantage is thus their negligible readout noise. The use of avalanche breakdown for amplification of photo charges had already been described in the U.S. patent 3,761,744 in 1973 by George E. Smith/Bell Telephone Laboratories. EMCCDs show

1496-422: A similar sensitivity to intensified CCDs (ICCDs). However, as with ICCDs, the gain that is applied in the gain register is stochastic and the exact gain that has been applied to a pixel's charge is impossible to know. At high gains (> 30), this uncertainty has the same effect on the signal-to-noise ratio (SNR) as halving the quantum efficiency (QE) with respect to operation with a gain of unity. This effect

1584-416: A single slice of the image, whereas a two-dimensional array, used in video and still cameras, captures a two-dimensional picture corresponding to the scene projected onto the focal plane of the sensor. Once the array has been exposed to the image, a control circuit causes each capacitor to transfer its contents to its neighbor (operating as a shift register). The last capacitor in the array dumps its charge into

1672-424: A time. During the readout phase, cells are shifted down the entire area of the CCD. While they are shifted, they continue to collect light. Thus, if the shifting is not fast enough, errors can result from light that falls on a cell holding charge during the transfer. These errors are referred to as "vertical smear" and cause a strong light source to create a vertical line above and below its exact location. In addition,

1760-464: A variety of astronomical applications involving low light sources and transient events such as lucky imaging of faint stars, high speed photon counting photometry, Fabry-Pérot spectroscopy and high-resolution spectroscopy. More recently, these types of CCDs have broken into the field of biomedical research in low-light applications including small animal imaging , single-molecule imaging , Raman spectroscopy , super resolution microscopy as well as

1848-505: A wide variety of modern fluorescence microscopy techniques thanks to greater SNR in low-light conditions in comparison with traditional CCDs and ICCDs. Computer memory Computer memory stores information, such as data and programs, for immediate use in the computer . The term memory is often synonymous with the terms RAM , main memory , or primary storage . Archaic synonyms for main memory include core (for magnetic core memory) and store . Main memory operates at

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1936-593: Is semi-volatile . The term is used to describe a memory that has some limited non-volatile duration after power is removed, but then data is ultimately lost. A typical goal when using a semi-volatile memory is to provide the high performance and durability associated with volatile memories while providing some benefits of non-volatile memory. For example, some non-volatile memory types experience wear when written. A worn cell has increased volatility but otherwise continues to work. Data locations which are written frequently can thus be directed to use worn circuits. As long as

2024-410: Is a photoactive region (an epitaxial layer of silicon), and a transmission region made out of a shift register (the CCD, properly speaking). An image is projected through a lens onto the capacitor array (the photoactive region), causing each capacitor to accumulate an electric charge proportional to the light intensity at that location. A one-dimensional array, used in line-scan cameras, captures

2112-432: Is a specialized CCD, often used in astronomy and some professional video cameras , designed for high exposure efficiency and correctness. The normal functioning of a CCD, astronomical or otherwise, can be divided into two phases: exposure and readout. During the first phase, the CCD passively collects incoming photons , storing electrons in its cells. After the exposure time is passed, the cells are read out one line at

2200-464: Is a system where each program is given an area of memory to use and is prevented from going outside that range. If the operating system detects that a program has tried to alter memory that does not belong to it, the program is terminated (or otherwise restricted or redirected). This way, only the offending program crashes, and other programs are not affected by the misbehavior (whether accidental or intentional). Use of protected memory greatly enhances both

2288-409: Is also used to describe semi-volatile behavior constructed from other memory types, such as nvSRAM , which combines SRAM and a non-volatile memory on the same chip , where an external signal copies data from the volatile memory to the non-volatile memory, but if power is removed before the copy occurs, the data is lost. Another example is battery-backed RAM , which uses an external battery to power

2376-470: Is computer memory that requires power to maintain the stored information. Most modern semiconductor volatile memory is either static RAM (SRAM) or dynamic RAM (DRAM). DRAM dominates for desktop system memory. SRAM is used for CPU cache . SRAM is also found in small embedded systems requiring little memory. SRAM retains its contents as long as the power is connected and may use a simpler interface, but commonly uses six transistors per bit . Dynamic RAM

2464-918: Is more complicated for interfacing and control, needing regular refresh cycles to prevent losing its contents, but uses only one transistor and one capacitor per bit, allowing it to reach much higher densities and much cheaper per-bit costs. Non-volatile memory can retain the stored information even when not powered. Examples of non-volatile memory include read-only memory , flash memory , most types of magnetic computer storage devices (e.g. hard disk drives , floppy disks and magnetic tape ), optical discs , and early computer storage methods such as magnetic drum , paper tape and punched cards . Non-volatile memory technologies under development include ferroelectric RAM , programmable metallization cell , Spin-transfer torque magnetic RAM , SONOS , resistive random-access memory , racetrack memory , Nano-RAM , 3D XPoint , and millipede memory . A third category of memory

2552-565: Is one of the major advantages of the ICCD over the EMCCD cameras. The highest performing ICCD cameras enable shutter times as short as 200 picoseconds . ICCD cameras are in general somewhat higher in price than EMCCD cameras because they need the expensive image intensifier. On the other hand, EMCCD cameras need a cooling system to cool the EMCCD chip down to temperatures around 170  K (−103  °C ). This cooling system adds additional costs to

2640-411: Is organized into memory cells each storing one bit (0 or 1). Flash memory organization includes both one bit per memory cell and a multi-level cell capable of storing multiple bits per cell. The memory cells are grouped into words of fixed word length , for example, 1, 2, 4, 8, 16, 32, 64 or 128 bits. Each word can be accessed by a binary address of N bits, making it possible to store 2 words in

2728-482: Is physically stored or whether the user's computer will have enough memory. The operating system will place actively used data in RAM, which is much faster than hard disks. When the amount of RAM is not sufficient to run all the current programs, it can result in a situation where the computer spends more time moving data from RAM to disk and back than it does accomplishing tasks; this is known as thrashing . Protected memory

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2816-564: Is referred to as the Excess Noise Factor (ENF). However, at very low light levels (where the quantum efficiency is most important), it can be assumed that a pixel either contains an electron—or not. This removes the noise associated with the stochastic multiplication at the risk of counting multiple electrons in the same pixel as a single electron. To avoid multiple counts in one pixel due to coincident photons in this mode of operation, high frame rates are essential. The dispersion in

2904-512: Is the probability of getting n output electrons given m input electrons and a total mean multiplication register gain of g . For very large numbers of input electrons, this complex distribution function converges towards a Gaussian. Because of the lower costs and better resolution, EMCCDs are capable of replacing ICCDs in many applications. ICCDs still have the advantage that they can be gated very fast and thus are useful in applications like range-gated imaging . EMCCD cameras indispensably need

2992-422: Is the right choice. Consumer snap-shot cameras have used interline devices. On the other hand, for those applications that require the best possible light collection and issues of money, power and time are less important, the full-frame device is the right choice. Astronomers tend to prefer full-frame devices. The frame-transfer falls in between and was a common choice before the fill-factor issue of interline devices

3080-405: Is used in the construction of interline-transfer devices. Another version of CCD is called a peristaltic CCD. In a peristaltic charge-coupled device, the charge-packet transfer operation is analogous to the peristaltic contraction and dilation of the digestive system . The peristaltic CCD has an additional implant that keeps the charge away from the silicon/ silicon dioxide interface and generates

3168-501: The Electrotechnical Laboratory in 1972. Flash memory was invented by Fujio Masuoka at Toshiba in the early 1980s. Masuoka and colleagues presented the invention of NOR flash in 1984, and then NAND flash in 1987. Toshiba commercialized NAND flash memory in 1987. Developments in technology and economies of scale have made possible so-called very large memory (VLM) computers. Volatile memory

3256-457: The K200D and K-m . VIDEO: 720p / 1080p / 4K This photography-related article is a stub . You can help Misplaced Pages by expanding it . Charge-coupled device A charge-coupled device ( CCD ) is an integrated circuit containing an array of linked, or coupled, capacitors . Under the control of an external circuit, each capacitor can transfer its electric charge to

3344-681: The Kodak Apparatus Division, invented a digital still camera using this same Fairchild 100 × 100 CCD in 1975. The interline transfer (ILT) CCD device was proposed by L. Walsh and R. Dyck at Fairchild in 1973 to reduce smear and eliminate a mechanical shutter . To further reduce smear from bright light sources, the frame-interline-transfer (FIT) CCD architecture was developed by K. Horii, T. Kuroda and T. Kunii at Matsushita (now Panasonic) in 1981. The first KH-11 KENNEN reconnaissance satellite equipped with charge-coupled device array ( 800 × 800 pixels) technology for imaging

3432-566: The LOCOS process to produce the channel stop region. Channel stops are thermally grown oxides that serve to isolate the charge packets in one column from those in another. These channel stops are produced before the polysilicon gates are, as the LOCOS process utilizes a high-temperature step that would destroy the gate material. The channel stops are parallel to, and exclusive of, the channel, or "charge carrying", regions. Channel stops often have

3520-499: The Royal Radar Establishment proposed digital storage systems that use CMOS (complementary MOS) memory cells, in addition to MOSFET power devices for the power supply , switched cross-coupling, switches and delay-line storage . The development of silicon-gate MOS integrated circuit (MOS IC) technology by Federico Faggin at Fairchild in 1968 enabled the production of MOS memory chips . NMOS memory

3608-558: The System/360 Model 95 . Toshiba introduced bipolar DRAM memory cells for its Toscal BC-1411 electronic calculator in 1965. While it offered improved performance, bipolar DRAM could not compete with the lower price of the then dominant magnetic-core memory. MOS technology is the basis for modern DRAM. In 1966, Robert H. Dennard at the IBM Thomas J. Watson Research Center was working on MOS memory. While examining

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3696-550: The Whirlwind I computer in 1953. Magnetic-core memory was the dominant form of memory until the development of MOS semiconductor memory in the 1960s. The first semiconductor memory was implemented as a flip-flop circuit in the early 1960s using bipolar transistors . Semiconductor memory made from discrete devices was first shipped by Texas Instruments to the United States Air Force in 1961. In

3784-473: The photodiode to the CCD. This led to their invention of the pinned photodiode, a photodetector structure with low lag, low noise , high quantum efficiency and low dark current . It was first publicly reported by Teranishi and Ishihara with A. Kohono, E. Oda and K. Arai in 1982, with the addition of an anti-blooming structure. The new photodetector structure invented at NEC was given the name "pinned photodiode" (PPD) by B.C. Burkey at Kodak in 1984. In 1987,

3872-561: The Arma Division of the American Bosch Arma Corporation. In 1967, Dawon Kahng and Simon Sze of Bell Labs proposed that the floating gate of a MOS semiconductor device could be used for the cell of a reprogrammable ROM, which led to Dov Frohman of Intel inventing EPROM (erasable PROM) in 1971. EEPROM (electrically erasable PROM) was developed by Yasuo Tarui, Yutaka Hayashi and Kiyoko Naga at

3960-399: The CCD cannot be used to collect light while it is being read out. A faster shifting requires a faster readout, and a faster readout can introduce errors in the cell charge measurement, leading to a higher noise level. A frame transfer CCD solves both problems: it has a shielded, not light sensitive, area containing as many cells as the area exposed to light. Typically, this area is covered by

4048-402: The CCD concept. Michael Tompsett was awarded the 2010 National Medal of Technology and Innovation , for pioneering work and electronic technologies including the design and development of the first CCD imagers. He was also awarded the 2012 IEEE Edison Medal for "pioneering contributions to imaging devices including CCD Imagers, cameras and thermal imagers". In a CCD for capturing images, there

4136-545: The CCD to deplete, near the p–n junction and will collect and move the charge packets beneath the gates—and within the channels—of the device. CCD manufacturing and operation can be optimized for different uses. The above process describes a frame transfer CCD. While CCDs may be manufactured on a heavily doped p++ wafer it is also possible to manufacture a device inside p-wells that have been placed on an n-wafer. This second method, reportedly, reduces smear, dark current , and infrared and red response. This method of manufacture

4224-477: The CCD-G5, was released by Sony in 1983, based on a prototype developed by Yoshiaki Hagiwara in 1981. Early CCD sensors suffered from shutter lag . This was largely resolved with the invention of the pinned photodiode (PPD). It was invented by Nobukazu Teranishi , Hiromitsu Shiraki and Yasuo Ishihara at NEC in 1980. They recognized that lag can be eliminated if the signal carriers could be transferred from

4312-404: The EMCCD camera and often yields heavy condensation problems in the application. ICCDs are used in night vision devices and in various scientific applications. An electron-multiplying CCD (EMCCD, also known as an L3Vision CCD, a product commercialized by e2v Ltd., GB, L3CCD or Impactron CCD, a now-discontinued product offered in the past by Texas Instruments) is a charge-coupled device in which

4400-610: The PPD began to be incorporated into most CCD devices, becoming a fixture in consumer electronic video cameras and then digital still cameras . Since then, the PPD has been used in nearly all CCD sensors and then CMOS sensors . In January 2006, Boyle and Smith were awarded the National Academy of Engineering Charles Stark Draper Prize , and in 2009 they were awarded the Nobel Prize for Physics for their invention of

4488-451: The array's dark current , improving the sensitivity of the CCD to low light intensities, even for ultraviolet and visible wavelengths. Professional observatories often cool their detectors with liquid nitrogen to reduce the dark current, and therefore the thermal noise , to negligible levels. The frame transfer CCD imager was the first imaging structure proposed for CCD Imaging by Michael Tompsett at Bell Laboratories. A frame transfer CCD

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4576-426: The channel in which the photogenerated charge packets will travel. Simon Sze details the advantages of a buried-channel device: This thin layer (= 0.2–0.3 micron) is fully depleted and the accumulated photogenerated charge is kept away from the surface. This structure has the advantages of higher transfer efficiency and lower dark current, from reduced surface recombination. The penalty is smaller charge capacity, by

4664-490: The characteristics of MOS technology, he found it was possible to build capacitors , and that storing a charge or no charge on the MOS capacitor could represent the 1 and 0 of a bit, while the MOS transistor could control writing the charge to the capacitor. This led to his development of a single-transistor DRAM memory cell. In 1967, Dennard filed a patent for a single-transistor DRAM memory cell based on MOS technology. This led to

4752-451: The charge could be stepped along from one to the next. This led to the invention of the charge-coupled device by Boyle and Smith in 1969. They conceived of the design of what they termed, in their notebook, "Charge 'Bubble' Devices". The initial paper describing the concept in April 1970 listed possible uses as memory , a delay line, and an imaging device. The device could also be used as

4840-714: The computer memory can be transferred to storage; a common way of doing this is through a memory management technique called virtual memory . Modern computer memory is implemented as semiconductor memory , where data is stored within memory cells built from MOS transistors and other components on an integrated circuit . There are two main kinds of semiconductor memory: volatile and non-volatile . Examples of non-volatile memory are flash memory and ROM , PROM , EPROM , and EEPROM memory. Examples of volatile memory are dynamic random-access memory (DRAM) used for primary storage and static random-access memory (SRAM) used mainly for CPU cache . Most semiconductor memory

4928-597: The delay line, the Williams tube and Selectron tube , originated in 1946, both using electron beams in glass tubes as means of storage. Using cathode-ray tubes , Fred Williams invented the Williams tube, which was the first random-access computer memory . The Williams tube was able to store more information than the Selectron tube (the Selectron was limited to 256 bits, while the Williams tube could store thousands) and

5016-401: The early 1940s. Through the construction of a glass tube filled with mercury and plugged at each end with a quartz crystal, delay lines could store bits of information in the form of sound waves propagating through the mercury, with the quartz crystals acting as transducers to read and write bits. Delay-line memory was limited to a capacity of up to a few thousand bits. Two alternatives to

5104-594: The first commercial DRAM IC chip, the Intel 1103 in October 1970. Synchronous dynamic random-access memory (SDRAM) later debuted with the Samsung KM48SL2000 chip in 1992. The term memory is also often used to refer to non-volatile memory including read-only memory (ROM) through modern flash memory . Programmable read-only memory (PROM) was invented by Wen Tsing Chow in 1956, while working for

5192-518: The following types: Virtual memory is a system where physical memory is managed by the operating system typically with assistance from a memory management unit , which is part of many modern CPUs . It allows multiple types of memory to be used. For example, some data can be stored in RAM while other data is stored on a hard drive (e.g. in a swapfile ), functioning as an extension of the cache hierarchy . This offers several advantages. Computer programmers no longer need to worry about where their data

5280-819: The gain is shown in the graph on the right. For multiplication registers with many elements and large gains it is well modelled by the equation: P ( n ) = ( n − m + 1 ) m − 1 ( m − 1 ) ! ( g − 1 + 1 m ) m exp ⁡ ( − n − m + 1 g − 1 + 1 m )  if  n ≥ m {\displaystyle P\left(n\right)={\frac {\left(n-m+1\right)^{m-1}}{\left(m-1\right)!\left(g-1+{\frac {1}{m}}\right)^{m}}}\exp \left(-{\frac {n-m+1}{g-1+{\frac {1}{m}}}}\right)\quad {\text{ if }}n\geq m} where P

5368-506: The image sensor for storage. In this device, only one pixel shift has to occur to transfer from image area to storage area; thus, shutter times can be less than a microsecond and smear is essentially eliminated. The advantage is not free, however, as the imaging area is now covered by opaque strips dropping the fill factor to approximately 50 percent and the effective quantum efficiency by an equivalent amount. Modern designs have addressed this deleterious characteristic by adding microlenses on

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5456-497: The incident light. Most common types of CCDs are sensitive to near-infrared light, which allows infrared photography , night-vision devices, and zero lux (or near zero lux) video-recording/photography. For normal silicon-based detectors, the sensitivity is limited to 1.1 μm. One other consequence of their sensitivity to infrared is that infrared from remote controls often appears on CCD-based digital cameras or camcorders if they do not have infrared blockers. Cooling reduces

5544-467: The invention and began development programs. Fairchild's effort, led by ex-Bell researcher Gil Amelio, was the first with commercial devices, and by 1974 had a linear 500-element device and a 2D 100 × 100 pixel device. Peter Dillon, a scientist at Kodak Research Labs, invented the first color CCD image sensor by overlaying a color filter array on this Fairchild 100 x 100 pixel Interline CCD starting in 1974. Steven Sasson , an electrical engineer working for

5632-431: The large quality advantage CCDs enjoyed early on has narrowed over time and since the late 2010s CMOS sensors are the dominant technology, having largely if not completely replaced CCD image sensors. The basis for the CCD is the metal–oxide–semiconductor (MOS) structure, with MOS capacitors being the basic building blocks of a CCD, and a depleted MOS structure used as the photodetector in early CCD devices. In

5720-411: The late 1960s, Willard Boyle and George E. Smith at Bell Labs were researching MOS technology while working on semiconductor bubble memory . They realized that an electric charge was the analogy of the magnetic bubble and that it could be stored on a tiny MOS capacitor. As it was fairly straightforward to fabricate a series of MOS capacitors in a row, they connected a suitable voltage to them so that

5808-449: The late 1960s. The invention of the metal–oxide–semiconductor field-effect transistor ( MOSFET ) enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements. MOS memory was developed by John Schmidt at Fairchild Semiconductor in 1964. In addition to higher performance, MOS semiconductor memory was cheaper and consumed less power than magnetic core memory. In 1965, J. Wood and R. Ball of

5896-447: The location is updated within some known retention time, the data stays valid. After a period of time without update, the value is copied to a less-worn circuit with longer retention. Writing first to the worn area allows a high write rate while avoiding wear on the not-worn circuits. As a second example, an STT-RAM can be made non-volatile by building large cells, but doing so raises the cost per bit and power requirements and reduces

5984-457: The memory device in case of external power loss. If power is off for an extended period of time, the battery may run out, resulting in data loss. Proper management of memory is vital for a computer system to operate properly. Modern operating systems have complex systems to properly manage memory. Failure to do so can lead to bugs or slow performance. Improper management of memory is a common cause of bugs and security vulnerabilities, including

6072-478: The memory. In the early 1940s, memory technology often permitted a capacity of a few bytes. The first electronic programmable digital computer , the ENIAC , using thousands of vacuum tubes , could perform simple calculations involving 20 numbers of ten decimal digits stored in the vacuum tubes. The next significant advance in computer memory came with acoustic delay-line memory , developed by J. Presper Eckert in

6160-467: The multiplied electrons back to photons which are guided to the CCD by a fiber optic or a lens. An image intensifier inherently includes a shutter functionality: If the control voltage between the photocathode and the MCP is reversed, the emitted photoelectrons are not accelerated towards the MCP but return to the photocathode. Thus, no electrons are multiplied and emitted by the MCP, no electrons are going to

6248-413: The other in the mentioned sequence. The photons which are coming from the light source fall onto the photocathode, thereby generating photoelectrons. The photoelectrons are accelerated towards the MCP by an electrical control voltage, applied between photocathode and MCP. The electrons are multiplied inside of the MCP and thereafter accelerated towards the phosphor screen. The phosphor screen finally converts

6336-491: The output of the CCD, and this must be taken into consideration in satellites using CCDs. The photoactive region of a CCD is, generally, an epitaxial layer of silicon . It is lightly p doped (usually with boron ) and is grown upon a substrate material, often p++. In buried-channel devices, the type of design utilized in most modern CCDs, certain areas of the surface of the silicon are ion implanted with phosphorus , giving them an n-doped designation. This region defines

6424-401: The output of the charge amplifier into a low-pass filter), which is then processed and fed out to other circuits for transmission, recording, or other processing. Before the MOS capacitors are exposed to light, they are biased into the depletion region; in n-channel CCDs, the silicon under the bias gate is slightly p -doped or intrinsic. The gate is then biased at a positive potential, above

6512-407: The phosphor screen and no light is emitted from the image intensifier. In this case no light falls onto the CCD, which means that the shutter is closed. The process of reversing the control voltage at the photocathode is called gating and therefore ICCDs are also called gateable CCD cameras. Besides the extremely high sensitivity of ICCD cameras, which enable single photon detection, the gateability

6600-409: The reliability and security of a computer system. Without protected memory, it is possible that a bug in one program will alter the memory used by another program. This will cause that other program to run off of corrupted memory with unpredictable results. If the operating system's memory is corrupted, the entire computer system may crash and need to be rebooted . At times programs intentionally alter

6688-479: The same year, the concept of solid-state memory on an integrated circuit (IC) chip was proposed by applications engineer Bob Norman at Fairchild Semiconductor . The first bipolar semiconductor memory IC chip was the SP95 introduced by IBM in 1965. While semiconductor memory offered improved performance over magnetic-core memory, it remained larger and more expensive and did not displace magnetic-core memory until

6776-508: The semiconductor-oxide interface; the CCD is then used to read out these charges. Although CCDs are not the only technology to allow for light detection, CCD image sensors are widely used in professional, medical, and scientific applications where high-quality image data are required. In applications with less exacting quality demands, such as consumer and professional digital cameras , active pixel sensors , also known as CMOS sensors (complementary MOS sensors), are generally used. However,

6864-406: The surface of the device to direct light away from the opaque regions and on the active area. Microlenses can bring the fill factor back up to 90 percent or more depending on pixel size and the overall system's optical design. The choice of architecture comes down to one of utility. If the application cannot tolerate an expensive, failure-prone, power-intensive mechanical shutter, an interline device

6952-407: The threshold for strong inversion, which will eventually result in the creation of an n channel below the gate as in a MOSFET . However, it takes time to reach this thermal equilibrium: up to hours in high-end scientific cameras cooled at low temperature. Initially after biasing, the holes are pushed far into the substrate, and no mobile electrons are at or near the surface; the CCD thus operates in

7040-456: The total usable integration time. The accumulation of electrons at or near the surface can proceed either until image integration is over and charge begins to be transferred, or thermal equilibrium is reached. In this case, the well is said to be full. The maximum capacity of each well is known as the well depth, typically about 10 electrons per pixel. CCDs are normally susceptible to ionizing radiation and energetic particles which causes noise in

7128-434: The write speed. Using small cells improves cost, power, and speed, but leads to semi-volatile behavior. In some applications, the increased volatility can be managed to provide many benefits of a non-volatile memory, for example by removing power but forcing a wake-up before data is lost; or by caching read-only data and discarding the cached data if the power-off time exceeds the non-volatile threshold. The term semi-volatile

7216-554: Was a simple 8-bit shift register, reported by Tompsett, Amelio and Smith in August 1970. This device had input and output circuits and was used to demonstrate its use as a shift register and as a crude eight pixel linear imaging device. Development of the device progressed at a rapid rate. By 1971, Bell researchers led by Michael Tompsett were able to capture images with simple linear devices. Several companies, including Fairchild Semiconductor , RCA and Texas Instruments , picked up on

7304-479: Was addressed. Today, frame-transfer is usually chosen when an interline architecture is not available, such as in a back-illuminated device. CCDs containing grids of pixels are used in digital cameras , optical scanners , and video cameras as light-sensing devices. They commonly respond to 70 percent of the incident light (meaning a quantum efficiency of about 70 percent) making them far more efficient than photographic film , which captures only about 2 percent of

7392-638: Was commercialized by IBM in the early 1970s. MOS memory overtook magnetic core memory as the dominant memory technology in the early 1970s. The two main types of volatile random-access memory (RAM) are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Bipolar SRAM was invented by Robert Norman at Fairchild Semiconductor in 1963, followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964. SRAM became an alternative to magnetic-core memory, but requires six transistors for each bit of data. Commercial use of SRAM began in 1965, when IBM introduced their SP95 SRAM chip for

7480-450: Was demonstrated by Gil Amelio , Michael Francis Tompsett and George Smith in April 1970. This was the first experimental application of the CCD in image sensor technology, and used a depleted MOS structure as the photodetector. The first patent ( U.S. patent 4,085,456 ) on the application of CCDs to imaging was assigned to Tompsett, who filed the application in 1971. The first working CCD made with integrated circuit technology

7568-471: Was launched in December 1976. Under the leadership of Kazuo Iwama , Sony started a large development effort on CCDs involving a significant investment. Eventually, Sony managed to mass-produce CCDs for their camcorders . Before this happened, Iwama died in August 1982. Subsequently, a CCD chip was placed on his tombstone to acknowledge his contribution. The first mass-produced consumer CCD video camera ,

7656-421: Was less expensive. The Williams tube was nevertheless frustratingly sensitive to environmental disturbances. Efforts began in the late 1940s to find non-volatile memory . Magnetic-core memory allowed for memory recall after power loss. It was developed by Frederick W. Viehe and An Wang in the late 1940s, and improved by Jay Forrester and Jan A. Rajchman in the early 1950s, before being commercialized with

7744-648: Was officially announced on January 23, 2008. On June 27, 2007, Pentax announced the K100D Super . It retains the features and the 6.1-megapixel image sensor of the K100D, while adding support for Supersonic Drive Motor(SDM) lenses and dust-reduction technology. Although K100D Super was announced in June, it seems that camera was in production since January 2007 (manufacture date found in Exif data of shots). The K100D, K100D Super and K110D were discontinued in favor of

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