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140-478: Semiconductor devices can display a range of different useful properties, such as passing current more easily in one direction than the other, showing variable resistance, and having sensitivity to light or heat. Because the electrical properties of a semiconductor material can be modified by doping and by the application of electrical fields or light, devices made from semiconductors can be used for amplification, switching, and energy conversion . The term semiconductor

280-440: A current requires the flow of electrons, and semiconductors have their valence bands filled, preventing the entire flow of new electrons. Several developed techniques allow semiconducting materials to behave like conducting materials, such as doping or gating . These modifications have two outcomes: n-type and p-type . These refer to the excess or shortage of electrons, respectively. A balanced number of electrons would cause

420-438: A cut-off frequency of one cycle per second, too low for any practical applications, but an effective application of the available theory. At Bell Labs , William Shockley and A. Holden started investigating solid-state amplifiers in 1938. The first p–n junction in silicon was observed by Russell Ohl about 1941 when a specimen was found to be light-sensitive, with a sharp boundary between p-type impurity at one end and n-type at

560-515: A junction field-effect transistor ( JFET ) or by an electrode insulated from the bulk material by an oxide layer, forming a metal–oxide–semiconductor field-effect transistor ( MOSFET ). The metal-oxide-semiconductor FET (MOSFET, or MOS transistor), a solid-state device, is by far the most used widely semiconductor device today. It accounts for at least 99.9% of all transistors, and there have been an estimated 13   sextillion MOSFETs manufactured between 1960 and 2018. The gate electrode

700-444: A magnetic field . Electrons, due to their smaller mass and thus larger space-filling properties as matter waves , determine the size of atoms and molecules that possess any electrons at all. Thus, anions (negatively charged ions) are larger than the parent molecule or atom, as the excess electron(s) repel each other and add to the physical size of the ion, because its size is determined by its electron cloud . Cations are smaller than

840-527: A mass-production basis, which limited them to a number of specialised applications. Semiconductor device A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon , germanium , and gallium arsenide , as well as organic semiconductors ) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in

980-422: A clearly visible crack near the middle. However, as he moved about the room trying to test it, the detector would mysteriously work, and then stop again. After some study he found that the behavior was controlled by the light in the room – more light caused more conductance in the crystal. He invited several other people to see this crystal, and Walter Brattain immediately realized there was some sort of junction at

1120-512: A common semi-insulator is gallium arsenide . Some materials, such as titanium dioxide , can even be used as insulating materials for some applications, while being treated as wide-gap semiconductors for other applications. The partial filling of the states at the bottom of the conduction band can be understood as adding electrons to that band. The electrons do not stay indefinitely (due to the natural thermal recombination ) but they can move around for some time. The actual concentration of electrons

1260-423: A completely full valence band is inert, not conducting any current. If an electron is taken out of the valence band, then the trajectory that the electron would normally have taken is now missing its charge. For the purposes of electric current, this combination of the full valence band, minus the electron, can be converted into a picture of a completely empty band containing a positively charged particle that moves in

1400-473: A current to flow throughout the material. Homojunctions occur when two differently doped semiconducting materials are joined. For example, a configuration could consist of p-doped and n-doped germanium . This results in an exchange of electrons and holes between the differently doped semiconducting materials. The n-doped germanium would have an excess of electrons, and the p-doped germanium would have an excess of holes. The transfer occurs until an equilibrium

1540-454: A free electron and a positive ion. Ions are also created by chemical interactions, such as the dissolution of a salt in liquids, or by other means, such as passing a direct current through a conducting solution, dissolving an anode via ionization . The word ion was coined from neuter present participle of Greek ἰέναι ( ienai ), meaning "to go". A cation is something that moves down ( Greek : κάτω , kato , meaning "down") and an anion

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1680-415: A gas is extensively used for the detection of radiation such as alpha , beta , gamma , and X-rays . The original ionization event in these instruments results in the formation of an "ion pair"; a positive ion and a free electron, by ion impact by the radiation on the gas molecules. The ionization chamber is the simplest of these detectors, and collects all the charges created by direct ionization within

1820-400: A gas with less net electric charge is called the ionization potential , or ionization energy . The n th ionization energy of an atom is the energy required to detach its n th electron after the first n − 1 electrons have already been detached. Each successive ionization energy is markedly greater than the last. Particularly great increases occur after any given block of atomic orbitals

1960-411: A generic name for their new invention: "Semiconductor Triode", "Solid Triode", "Surface States Triode" [ sic ], "Crystal Triode" and "Iotatron" were all considered, but "transistor", coined by John R. Pierce , won an internal ballot. The rationale for the name is described in the following extract from the company's Technical Memoranda (May 28, 1948) [26] calling for votes: Transistor. This

2100-410: A guide to the construction of more capable and reliable devices. Alexander Graham Bell used the light-sensitive property of selenium to transmit sound over a beam of light in 1880. A working solar cell, of low efficiency, was constructed by Charles Fritts in 1883, using a metal plate coated with selenium and a thin layer of gold; the device became commercially useful in photographic light meters in

2240-435: A layer of silicon dioxide over the silicon wafer, for which they observed surface passivation effects. By 1957 Frosch and Derick, using masking and predeposition, were able to manufacture silicon dioxide field effect transistors; the first planar transistors, in which drain and source were adjacent at the same surface. They showed that silicon dioxide insulated, protected silicon wafers and prevented dopants from diffusing into

2380-443: A low-pressure chamber to create plasma . A common etch gas is chlorofluorocarbon , or more commonly known Freon . A high radio-frequency voltage between the cathode and anode is what creates the plasma in the chamber. The silicon wafer is located on the cathode, which causes it to be hit by the positively charged ions that are released from the plasma. The result is silicon that is etched anisotropically . The last process

2520-483: A minus indication "Anion (−)" indicates the negative charge. With a cation it is just the opposite: it has fewer electrons than protons, giving it a net positive charge, hence the indication "Cation (+)". Since the electric charge on a proton is equal in magnitude to the charge on an electron, the net electric charge on an ion is equal to the number of protons in the ion minus the number of electrons. An anion (−) ( / ˈ æ n ˌ aɪ . ən / ANN -eye-ən , from

2660-440: A molecule/atom with multiple charges is by drawing out the signs multiple times, this is often seen with transition metals. Chemists sometimes circle the sign; this is merely ornamental and does not alter the chemical meaning. All three representations of Fe , Fe , and Fe shown in the figure, are thus equivalent. Monatomic ions are sometimes also denoted with Roman numerals , particularly in spectroscopy ; for example,

2800-402: A neutral atom or molecule is called ionization . Atoms can be ionized by bombardment with radiation , but the more usual process of ionization encountered in chemistry is the transfer of electrons between atoms or molecules. This transfer is usually driven by the attaining of stable ("closed shell") electronic configurations . Atoms will gain or lose electrons depending on which action takes

2940-420: A new branch of quantum mechanics , which became known as surface physics , to account for the behavior. The electrons in any one piece of the crystal would migrate about due to nearby charges. Electrons in the emitters, or the "holes" in the collectors, would cluster at the surface of the crystal where they could find their opposite charge "floating around" in the air (or water). Yet they could be pushed away from

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3080-624: A non-equilibrium situation. This introduces electrons and holes to the system, which interact via a process called ambipolar diffusion . Whenever thermal equilibrium is disturbed in a semiconducting material, the number of holes and electrons changes. Such disruptions can occur as a result of a temperature difference or photons , which can enter the system and create electrons and holes. The processes that create or annihilate electrons and holes are called generation and recombination, respectively. In certain semiconductors, excited electrons can relax by emitting light instead of producing heat. Controlling

3220-403: A p-type and an n-type semiconductor , there forms a depletion region where current conduction is inhibited by the lack of mobile charge carriers. When the device is forward biased (connected with the p-side, having a higher electric potential than the n-side), this depletion region is diminished, allowing for significant conduction. Contrariwise, only a very small current can be achieved when

3360-516: A pair is completed. Such carrier traps are sometimes purposely added to reduce the time needed to reach the steady-state. The conductivity of semiconductors may easily be modified by introducing impurities into their crystal lattice . The process of adding controlled impurities to a semiconductor is known as doping . The amount of impurity, or dopant, added to an intrinsic (pure) semiconductor varies its level of conductivity. Doped semiconductors are referred to as extrinsic . By adding impurity to

3500-592: A positive charge, forming the ion NH + 3 . However, this ion is unstable, because it has an incomplete valence shell around the nitrogen atom, making it a very reactive radical ion. Due to the instability of radical ions, polyatomic and molecular ions are usually formed by gaining or losing elemental ions such as H , rather than gaining or losing electrons. This allows the molecule to preserve its stable electronic configuration while acquiring an electrical charge. The energy required to detach an electron in its lowest energy state from an atom or molecule of

3640-411: A precise ionic gradient across membranes , the disruption of this gradient contributes to cell death. This is a common mechanism exploited by natural and artificial biocides , including the ion channels gramicidin and amphotericin (a fungicide ). Inorganic dissolved ions are a component of total dissolved solids , a widely known indicator of water quality . The ionizing effect of radiation on

3780-475: A semiconductor occurs due to mobile or "free" electrons and electron holes , collectively known as charge carriers . Doping a semiconductor with a small proportion of an atomic impurity, such as phosphorus or boron , greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes, it is called a p-type semiconductor ( p for positive electric charge ); when it contains excess free electrons, it

3920-500: A silicon atom in the crystal, a vacant state (an electron "hole") is created, which can move around the lattice and function as a charge carrier. Group V elements have five valence electrons, which allows them to act as a donor; substitution of these atoms for silicon creates an extra free electron. Therefore, a silicon crystal doped with boron creates a p-type semiconductor whereas one doped with phosphorus results in an n-type material. During manufacture , dopants can be diffused into

4060-549: A single larger surface would serve. The electron-emitting and collecting leads would both be placed very close together on the top, with the control lead placed on the base of the crystal. When current flowed through this "base" lead, the electrons or holes would be pushed out, across the block of the semiconductor, and collect on the far surface. As long as the emitter and collector were very close together, this should allow enough electrons or holes between them to allow conduction to start. The Bell team made many attempts to build such

4200-414: A stable configuration. This property is known as electropositivity . Non-metals, on the other hand, are characterized by having an electron configuration just a few electrons short of a stable configuration. As such, they have the tendency to gain more electrons in order to achieve a stable configuration. This tendency is known as electronegativity . When a highly electropositive metal is combined with

4340-563: A subset of devices follow those. For discrete devices , for example, there are three standards: JEDEC JESD370B in the United States, Pro Electron in Europe, and Japanese Industrial Standards (JIS). Semiconductor device fabrication is the process used to manufacture semiconductor devices , typically integrated circuits (ICs) such as computer processors , microcontrollers , and memory chips (such as RAM and Flash memory ). It

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4480-440: A substrate). Semiconductor materials are useful because their behavior can be easily manipulated by the deliberate addition of impurities, known as doping . Semiconductor conductivity can be controlled by the introduction of an electric or magnetic field, by exposure to light or heat, or by the mechanical deformation of a doped monocrystalline silicon grid; thus, semiconductors can make excellent sensors. Current conduction in

4620-449: A system with various tools but generally failed. Setups, where the contacts were close enough, were invariably as fragile as the original cat's whisker detectors had been, and would work briefly, if at all. Eventually, they had a practical breakthrough. A piece of gold foil was glued to the edge of a plastic wedge, and then the foil was sliced with a razor at the tip of the triangle. The result was two very closely spaced contacts of gold. When

4760-783: A theory of solid-state physics , which developed greatly in the first half of the 20th century. In 1878 Edwin Herbert Hall demonstrated the deflection of flowing charge carriers by an applied magnetic field, the Hall effect . The discovery of the electron by J.J. Thomson in 1897 prompted theories of electron-based conduction in solids. Karl Baedeker , by observing a Hall effect with the reverse sign to that in metals, theorized that copper iodide had positive charge carriers. Johan Koenigsberger  [ de ] classified solid materials like metals, insulators, and "variable conductors" in 1914 although his student Josef Weiss already introduced

4900-475: A vacuum, though with a different effective mass . Because the electrons behave like an ideal gas, one may also think about conduction in very simplistic terms such as the Drude model , and introduce concepts such as electron mobility . For partial filling at the top of the valence band, it is helpful to introduce the concept of an electron hole . Although the electrons in the valence band are always moving around,

5040-567: A variety of proportions. These compounds share with better-known semiconductors the properties of intermediate conductivity and a rapid variation of conductivity with temperature, as well as occasional negative resistance . Such disordered materials lack the rigid crystalline structure of conventional semiconductors such as silicon. They are generally used in thin film structures, which do not require material of higher electronic quality, being relatively insensitive to impurities and radiation damage. Almost all of today's electronic technology involves

5180-401: A −2 charge is known as a dianion and an ion with a +2 charge is known as a dication . A zwitterion is a neutral molecule with positive and negative charges at different locations within that molecule. Cations and anions are measured by their ionic radius and they differ in relative size: "Cations are small, most of them less than 10 m (10 cm) in radius. But most anions are large, as is

5320-415: Is a combination of processes that are used to prepare semiconducting materials for ICs. One process is called thermal oxidation , which forms silicon dioxide on the surface of the silicon . This is used as a gate insulator and field oxide . Other processes are called photomasks and photolithography . This process is what creates the patterns on the circuit in the integrated circuit. Ultraviolet light

5460-472: Is a function of the temperature, as the probability of getting enough thermal energy to produce a pair increases with temperature, being approximately exp(− E G / kT ) , where k is the Boltzmann constant , T is the absolute temperature and E G is bandgap. The probability of meeting is increased by carrier traps – impurities or dislocations which can trap an electron or hole and hold it until

5600-429: Is a multiple-step photolithographic and physico-chemical process (with steps such as thermal oxidation , thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer , typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. The fabrication process

5740-416: Is a negatively charged ion with more electrons than protons. (e.g. Cl (chloride ion) and OH (hydroxide ion)). Opposite electric charges are pulled towards one another by electrostatic force , so cations and anions attract each other and readily form ionic compounds . If only a + or - is present, it indicates a +1 or -1 charge. To indicate a more severe charge, the number of additional or missing atoms

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5880-578: Is also gaining popularity in power ICs and has found some application as the raw material for blue LEDs and is being investigated for use in semiconductor devices that could withstand very high operating temperatures and environments with the presence of significant levels of ionizing radiation . IMPATT diodes have also been fabricated from SiC. Various indium compounds ( indium arsenide , indium antimonide , and indium phosphide ) are also being used in LEDs and solid-state laser diodes . Selenium sulfide

6020-425: Is also used to describe materials used in high capacity, medium- to high-voltage cables as part of their insulation, and these materials are often plastic XLPE ( Cross-linked polyethylene ) with carbon black. The conductivity of silicon is increased by adding a small amount (of the order of 1 in 10) of pentavalent ( antimony , phosphorus , or arsenic ) or trivalent ( boron , gallium , indium ) atoms. This process

6160-484: Is an atom or molecule with a net electrical charge . The charge of an electron is considered to be negative by convention and this charge is equal and opposite to the charge of a proton , which is considered to be positive by convention. The net charge of an ion is not zero because its total number of electrons is unequal to its total number of protons. A cation is a positively charged ion with fewer electrons than protons (e.g. K (potassium ion)) while an anion

6300-491: Is an abbreviated combination of the words "transconductance" or "transfer", and "varistor". The device logically belongs in the varistor family, and has the transconductance or transfer impedance of a device having gain, so that this combination is descriptive. Shockley was upset about the device being credited to Brattain and Bardeen, who he felt had built it "behind his back" to take the glory. Matters became worse when Bell Labs lawyers found that some of Shockley's own writings on

6440-453: Is being studied in the manufacture of photovoltaic solar cells . The most common use for organic semiconductors is organic light-emitting diodes . All transistor types can be used as the building blocks of logic gates , which are fundamental in the design of digital circuits . In digital circuits like microprocessors , transistors act as on-off switches; in the MOSFET , for instance,

6580-404: Is called diffusion . This is the process that gives the semiconducting material its desired semiconducting properties. It is also known as doping . The process introduces an impure atom to the system, which creates the p–n junction . To get the impure atoms embedded in the silicon wafer, the wafer is first put in a 1,100 degree Celsius chamber. The atoms are injected in and eventually diffuse with

6720-452: Is called an n-type semiconductor ( n for a negative electric charge). A majority of mobile charge carriers have negative charges. The manufacture of semiconductors controls precisely the location and concentration of p- and n-type dopants. The connection of n-type and p-type semiconductors form p–n junctions . The most common semiconductor device in the world is the MOSFET (metal–oxide–semiconductor field-effect transistor ), also called

6860-555: Is charged to produce an electric field that controls the conductivity of a "channel" between two terminals, called the source and drain . Depending on the type of carrier in the channel, the device may be an n-channel (for electrons) or a p-channel (for holes) MOSFET. Although the MOSFET is named in part for its "metal" gate, in modern devices polysilicon is typically used instead. Two-terminal devices: Three-terminal devices: Four-terminal devices: By far, silicon (Si)

7000-429: Is exhausted of electrons. For this reason, ions tend to form in ways that leave them with full orbital blocks. For example, sodium has one valence electron in its outermost shell, so in ionized form it is commonly found with one lost electron, as Na . On the other side of the periodic table, chlorine has seven valence electrons, so in ionized form it is commonly found with one gained electron, as Cl . Caesium has

7140-615: Is in the breakdown of adenosine triphosphate ( ATP ), which provides the energy for many reactions in biological systems. Ions can be non-chemically prepared using various ion sources , usually involving high voltage or temperature. These are used in a multitude of devices such as mass spectrometers , optical emission spectrometers , particle accelerators , ion implanters , and ion engines . As reactive charged particles, they are also used in air purification by disrupting microbes, and in household items such as smoke detectors . As signalling and metabolism in organisms are controlled by

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7280-780: Is inert, blocking the passage of other electrons via that state. The energies of these quantum states are critical since a state is partially filled only if its energy is near the Fermi level (see Fermi–Dirac statistics ). High conductivity in material comes from it having many partially filled states and much state delocalization. Metals are good electrical conductors and have many partially filled states with energies near their Fermi level. Insulators , by contrast, have few partially filled states, their Fermi levels sit within band gaps with few energy states to occupy. Importantly, an insulator can be made to conduct by increasing its temperature: heating provides energy to promote some electrons across

7420-417: Is known as doping, and the resulting semiconductors are known as doped or extrinsic semiconductors . Apart from doping, the conductivity of a semiconductor can be improved by increasing its temperature. This is contrary to the behavior of a metal, in which conductivity decreases with an increase in temperature. The modern understanding of the properties of a semiconductor relies on quantum physics to explain

7560-845: Is neither a very good insulator nor a very good conductor. However, one important feature of semiconductors (and some insulators, known as semi-insulators ) is that their conductivity can be increased and controlled by doping with impurities and gating with electric fields. Doping and gating move either the conduction or valence band much closer to the Fermi level and greatly increase the number of partially filled states. Some wider-bandgap semiconductor materials are sometimes referred to as semi-insulators . When undoped, these have electrical conductivity nearer to that of electrical insulators, however they can be doped (making them as useful as semiconductors). Semi-insulators find niche applications in micro-electronics, such as substrates for HEMT . An example of

7700-607: Is one short of the stable, filled shell with 8 electrons. Thus, a chlorine atom tends to gain an extra electron and attain a stable 8- electron configuration , becoming a chloride anion in the process: This driving force is what causes sodium and chlorine to undergo a chemical reaction, wherein the "extra" electron is transferred from sodium to chlorine, forming sodium cations and chloride anions. Being oppositely charged, these cations and anions form ionic bonds and combine to form sodium chloride , NaCl, more commonly known as table salt. Polyatomic and molecular ions are often formed by

7840-446: Is performed in highly specialized semiconductor fabrication plants , also called foundries or "fabs", with the central part being the " clean room ". In more advanced semiconductor devices, such as modern 14 / 10 / 7 nm nodes, fabrication can take up to 15 weeks, with 11–13 weeks being the industry average. Production in advanced fabrication facilities is completely automated, with automated material handling systems taking care of

7980-451: Is possible to mix the notations for the individual metal centre with a polyatomic complex, as shown by the uranyl ion example. If an ion contains unpaired electrons , it is called a radical ion. Just like uncharged radicals, radical ions are very reactive. Polyatomic ions containing oxygen, such as carbonate and sulfate, are called oxyanions . Molecular ions that contain at least one carbon to hydrogen bond are called organic ions . If

8120-401: Is reached by a process called recombination , which causes the migrating electrons from the n-type to come in contact with the migrating holes from the p-type. The result of this process is a narrow strip of immobile ions , which causes an electric field across the junction. A difference in electric potential on a semiconducting material would cause it to leave thermal equilibrium and create

8260-473: Is something that moves up ( Greek : ἄνω , ano , meaning "up"). They are so called because ions move toward the electrode of opposite charge. This term was introduced (after a suggestion by the English polymath William Whewell ) by English physicist and chemist Michael Faraday in 1834 for the then-unknown species that goes from one electrode to the other through an aqueous medium. Faraday did not know

8400-415: Is supplied, as seen in O 2 (negative charge, peroxide ) and He (positive charge, alpha particle ). Ions consisting of only a single atom are termed atomic or monatomic ions , while two or more atoms form molecular ions or polyatomic ions . In the case of physical ionization in a fluid (gas or liquid), "ion pairs" are created by spontaneous molecule collisions, where each generated pair consists of

8540-439: Is the most widely used material in semiconductor devices. Its combination of low raw material cost, relatively simple processing, and a useful temperature range makes it currently the best compromise among the various competing materials. Silicon used in semiconductor device manufacturing is currently fabricated into boules that are large enough in diameter to allow the production of 300 mm (12 in.) wafers . Germanium (Ge)

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8680-504: Is typically very dilute, and so (unlike in metals) it is possible to think of the electrons in the conduction band of a semiconductor as a sort of classical ideal gas , where the electrons fly around freely without being subject to the Pauli exclusion principle . In most semiconductors, the conduction bands have a parabolic dispersion relation , and so these electrons respond to forces (electric field, magnetic field, etc.) much as they would in

8820-401: Is used along with a photoresist layer to create a chemical change that generates the patterns for the circuit. The etching is the next process that is required. The part of the silicon that was not covered by the photoresist layer from the previous step can now be etched. The main process typically used today is called plasma etching . Plasma etching usually involves an etch gas pumped in

8960-432: Is written in superscript immediately after the chemical structure for the molecule/atom. The net charge is written with the magnitude before the sign; that is, a doubly charged cation is indicated as 2+ instead of +2 . However, the magnitude of the charge is omitted for singly charged molecules/atoms; for example, the sodium cation is indicated as Na and not Na . An alternative (and acceptable) way of showing

9100-556: The Fe (positively doubly charged) example seen above is referred to as Fe(III) , Fe or Fe III (Fe I for a neutral Fe atom, Fe II for a singly ionized Fe ion). The Roman numeral designates the formal oxidation state of an element, whereas the superscripted Indo-Arabic numerals denote the net charge. The two notations are, therefore, exchangeable for monatomic ions, but the Roman numerals cannot be applied to polyatomic ions. However, it

9240-529: The Annalen der Physik und Chemie in 1835; Rosenschöld's findings were ignored. Simon Sze stated that Braun's research was the earliest systematic study of semiconductor devices. Also in 1874, Arthur Schuster found that a copper oxide layer on wires had rectification properties that ceased when the wires are cleaned. William Grylls Adams and Richard Evans Day observed the photovoltaic effect in selenium in 1876. A unified explanation of these phenomena required

9380-428: The Pauli exclusion principle ). These states are associated with the electronic band structure of the material. Electrical conductivity arises due to the presence of electrons in states that are delocalized (extending through the material), however in order to transport electrons a state must be partially filled , containing an electron only part of the time. If the state is always occupied with an electron, then it

9520-454: The Siege of Leningrad after successful completion. In 1926, Julius Edgar Lilienfeld patented a device resembling a field-effect transistor , but it was not practical. R. Hilsch  [ de ] and R. W. Pohl  [ de ] in 1938 demonstrated a solid-state amplifier using a structure resembling the control grid of a vacuum tube; although the device displayed power gain, it had

9660-445: The band gap , be accompanied by the emission of thermal energy (in the form of phonons ) or radiation (in the form of photons ). In some states, the generation and recombination of electron–hole pairs are in equipoise. The number of electron-hole pairs in the steady state at a given temperature is determined by quantum statistical mechanics . The precise quantum mechanical mechanisms of generation and recombination are governed by

9800-470: The conservation of energy and conservation of momentum . As the probability that electrons and holes meet together is proportional to the product of their numbers, the product is in the steady-state nearly constant at a given temperature, providing that there is no significant electric field (which might "flush" carriers of both types, or move them from neighbor regions containing more of them to meet together) or externally driven pair generation. The product

9940-441: The solid state , rather than as free electrons across a vacuum (typically liberated by thermionic emission ) or as free electrons and ions through an ionized gas . Semiconductor devices are manufactured both as single discrete devices and as integrated circuits , which consist of two or more devices—which can number from the hundreds to the billions—manufactured and interconnected on a single semiconductor wafer (also called

10080-928: The voltage applied to the gate determines whether the switch is on or off. Transistors used for analog circuits do not act as on-off switches; rather, they respond to a continuous range of inputs with a continuous range of outputs. Common analog circuits include amplifiers and oscillators . Circuits that interface or translate between digital circuits and analog circuits are known as mixed-signal circuits . Power semiconductor devices are discrete devices or integrated circuits intended for high current or high voltage applications. Power integrated circuits combine IC technology with power semiconductor technology, these are sometimes referred to as "smart" power devices. Several companies specialize in manufacturing power semiconductors. The part numbers of semiconductor devices are often manufacturer specific. Nevertheless, there have been attempts at creating standards for type codes, and

10220-460: The 1930s. Point-contact microwave detector rectifiers made of lead sulfide were used by Jagadish Chandra Bose in 1904; the cat's-whisker detector using natural galena or other materials became a common device in the development of radio . However, it was somewhat unpredictable in operation and required manual adjustment for best performance. In 1906, H.J. Round observed light emission when electric current passed through silicon carbide crystals,

10360-544: The EFEM which helps reduce the amount of humidity that enters the FOUP and improves yield. Semiconductors had been used in the electronics field for some time before the invention of the transistor. Around the turn of the 20th century they were quite common as detectors in radios , used in a device called a "cat's whisker" developed by Jagadish Chandra Bose and others. These detectors were somewhat troublesome, however, requiring

10500-453: The FOUPs into the machine. Additionally many machines also handle wafers in clean nitrogen or vacuum environments to reduce contamination and improve process control. Fabrication plants need large amounts of liquid nitrogen to maintain the atmosphere inside production machinery and FOUPs, which are constantly purged with nitrogen. There can also be an air curtain or a mesh between the FOUP and

10640-541: The Greek word ἄνω ( ánō ), meaning "up" ) is an ion with more electrons than protons, giving it a net negative charge (since electrons are negatively charged and protons are positively charged). A cation (+) ( / ˈ k æ t ˌ aɪ . ən / KAT -eye-ən , from the Greek word κάτω ( kátō ), meaning "down" ) is an ion with fewer electrons than protons, giving it a positive charge. There are additional names used for ions with multiple charges. For example, an ion with

10780-461: The MOS transistor . As of 2013, billions of MOS transistors are manufactured every day. Semiconductor devices made per year have been growing by 9.1% on average since 1978, and shipments in 2018 are predicted for the first time to exceed 1 trillion, meaning that well over 7 trillion have been made to date. A semiconductor diode is a device typically made from a single p–n junction . At the junction of

10920-415: The band gap, inducing partially filled states in both the band of states beneath the band gap ( valence band ) and the band of states above the band gap ( conduction band ). An (intrinsic) semiconductor has a band gap that is smaller than that of an insulator and at room temperature, significant numbers of electrons can be excited to cross the band gap. A pure semiconductor, however, is not very useful, as it

11060-412: The base-emitter current. Another type of transistor, the field-effect transistor (FET), operates on the principle that semiconductor conductivity can be increased or decreased by the presence of an electric field . An electric field can increase the number of free electrons and holes in a semiconductor, thereby changing its conductivity. The field may be applied by a reverse-biased p–n junction, forming

11200-519: The charge in an organic ion is formally centred on a carbon, it is termed a carbocation (if positively charged) or carbanion (if negatively charged). Monatomic ions are formed by the gain or loss of electrons to the valence shell (the outer-most electron shell) in an atom. The inner shells of an atom are filled with electrons that are tightly bound to the positively charged atomic nucleus , and so do not participate in this kind of chemical interaction. The process of gaining or losing electrons from

11340-405: The concentration and regions of p- and n-type dopants. A single semiconductor device crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behavior. Using a hot-point probe , one can determine quickly whether a semiconductor sample is p- or n-type. A few of the properties of semiconductor materials were observed throughout

11480-488: The concept of band gaps had been developed. Walter H. Schottky and Nevill Francis Mott developed models of the potential barrier and of the characteristics of a metal–semiconductor junction . By 1938, Boris Davydov had developed a theory of the copper-oxide rectifier, identifying the effect of the p–n junction and the importance of minority carriers and surface states. Agreement between theoretical predictions (based on developing quantum mechanics) and experimental results

11620-409: The corresponding parent atom or molecule due to the smaller size of the electron cloud. One particular cation (that of hydrogen) contains no electrons, and thus consists of a single proton – much smaller than the parent hydrogen atom. Anion (−) and cation (+) indicate the net electric charge on an ion. An ion that has more electrons than protons, giving it a net negative charge, is named an anion, and

11760-446: The crack. Further research cleared up the remaining mystery. The crystal had cracked because either side contained very slightly different amounts of the impurities Ohl could not remove – about 0.2%. One side of the crystal had impurities that added extra electrons (the carriers of electric current) and made it a "conductor". The other had impurities that wanted to bind to these electrons, making it (what he called) an "insulator". Because

11900-424: The crystal were of any reasonable size, the number of electrons (or holes) required to be injected would have to be very large, making it less than useful as an amplifier because it would require a large injection current to start with. That said, the whole idea of the crystal diode was that the crystal itself could provide the electrons over a very small distance, the depletion region. The key appeared to be to place

12040-616: The diode is reverse biased (connected with the n-side at lower electric potential than the p-side, and thus the depletion region expanded). Exposing a semiconductor to light can generate electron–hole pairs , which increases the number of free carriers and thereby the conductivity. Diodes optimized to take advantage of this phenomenon are known as photodiodes . Compound semiconductor diodes can also produce light, as in light-emitting diodes and laser diode Bipolar junction transistors (BJTs) are formed from two p–n junctions, in either n–p–n or p–n–p configuration. The middle, or base ,

12180-452: The electrical properties of materials. The properties of the time-temperature coefficient of resistance, rectification, and light-sensitivity were observed starting in the early 19th century. Thomas Johann Seebeck was the first to notice that semiconductors exhibit special feature such that experiment concerning an Seebeck effect emerged with much stronger result when applying semiconductors, in 1821. In 1833, Michael Faraday reported that

12320-399: The electrons being pushed into the collector would quickly fill up the "holes" (the electron-needy impurities), and conduction would stop almost instantly. This junction of the two crystals (or parts of one crystal) created a solid-state diode, and the concept soon became known as semiconduction. The mechanism of action when the diode off has to do with the separation of charge carriers around

12460-410: The electrons from the emitter to the collector of this newly discovered diode, an amplifier could be built. For instance, if contacts are placed on both sides of a single type of crystal, current will not flow between them through the crystal. However, if a third contact could then "inject" electrons or holes into the material, the current would flow. Actually doing this appeared to be very difficult. If

12600-530: The electrons in the conduction band). When ionizing radiation strikes a semiconductor, it may excite an electron out of its energy level and consequently leave a hole. This process is known as electron-hole pair generation . Electron-hole pairs are constantly generated from thermal energy as well, in the absence of any external energy source. Electron-hole pairs are also apt to recombine. Conservation of energy demands that these recombination events, in which an electron loses an amount of energy larger than

12740-512: The fast response of crystal detectors. Considerable research and development of silicon materials occurred during the war to develop detectors of consistent quality. Detector and power rectifiers could not amplify a signal. Many efforts were made to develop a solid-state amplifier and were successful in developing a device called the point contact transistor which could amplify 20 dB or more. In 1922, Oleg Losev developed two-terminal, negative resistance amplifiers for radio, but he died in

12880-450: The first demonstration to higher-ups at Bell Labs on the afternoon of 23 December 1947, often given as the birthdate of the transistor. What is now known as the " p–n–p point-contact germanium transistor " operated as a speech amplifier with a power gain of 18 in that trial. John Bardeen , Walter Houser Brattain , and William Bradford Shockley were awarded the 1956 Nobel Prize in physics for their work. Bell Telephone Laboratories needed

13020-454: The gaining or losing of elemental ions such as a proton, H , in neutral molecules. For example, when ammonia , NH 3 , accepts a proton, H —a process called protonation —it forms the ammonium ion, NH + 4 . Ammonia and ammonium have the same number of electrons in essentially the same electronic configuration , but ammonium has an extra proton that gives it a net positive charge. Ammonia can also lose an electron to gain

13160-435: The gas through the application of an electric field. The Geiger–Müller tube and the proportional counter both use a phenomenon known as a Townsend avalanche to multiply the effect of the original ionizing event by means of a cascade effect whereby the free electrons are given sufficient energy by the electric field to release further electrons by ion impact. When writing the chemical formula for an ion, its net charge

13300-439: The input and output contacts very close together on the surface of the crystal on either side of this region. Brattain started working on building such a device, and tantalizing hints of amplification continued to appear as the team worked on the problem. Sometimes the system would work but then stop working unexpectedly. In one instance a non-working system started working when placed in water. Ohl and Brattain eventually developed

13440-496: The junction. This is called a " depletion region ". Armed with the knowledge of how these new diodes worked, a vigorous effort began to learn how to build them on demand. Teams at Purdue University , Bell Labs , MIT , and the University of Chicago all joined forces to build better crystals. Within a year germanium production had been perfected to the point where military-grade diodes were being used in most radar sets. After

13580-549: The labs had one. After hunting one down at a used radio store in Manhattan , he found that it worked much better than tube-based systems. Ohl investigated why the cat's whisker functioned so well. He spent most of 1939 trying to grow more pure versions of the crystals. He soon found that with higher-quality crystals their finicky behavior went away, but so did their ability to operate as a radio detector. One day he found one of his purest crystals nevertheless worked well, and it had

13720-417: The least energy. For example, a sodium atom, Na, has a single electron in its valence shell, surrounding 2 stable, filled inner shells of 2 and 8 electrons. Since these filled shells are very stable, a sodium atom tends to lose its extra electron and attain this stable configuration, becoming a sodium cation in the process On the other hand, a chlorine atom, Cl, has 7 electrons in its valence shell, which

13860-641: The liquid or solid state when salts interact with solvents (for example, water) to produce solvated ions , which are more stable, for reasons involving a combination of energy and entropy changes as the ions move away from each other to interact with the liquid. These stabilized species are more commonly found in the environment at low temperatures. A common example is the ions present in seawater, which are derived from dissolved salts. As charged objects, ions are attracted to opposite electric charges (positive to negative, and vice versa) and repelled by like charges. When they move, their trajectories can be deflected by

14000-409: The lowest measured ionization energy of all the elements and helium has the greatest. In general, the ionization energy of metals is much lower than the ionization energy of nonmetals , which is why, in general, metals will lose electrons to form positively charged ions and nonmetals will gain electrons to form negatively charged ions. Ionic bonding is a kind of chemical bonding that arises from

14140-510: The luminescence of the Sun to the existence of the Earth's ionosphere . Atoms in their ionic state may have a different color from neutral atoms, and thus light absorption by metal ions gives the color of gemstones . In both inorganic and organic chemistry (including biochemistry), the interaction of water and ions is often relevant for understanding properties of systems; an example of their importance

14280-541: The material's majority carrier . The opposite carrier is called the minority carrier , which exists due to thermal excitation at a much lower concentration compared to the majority carrier. For example, the pure semiconductor silicon has four valence electrons that bond each silicon atom to its neighbors. In silicon, the most common dopants are group III and group V elements. Group III elements all contain three valence electrons, causing them to function as acceptors when used to dope silicon. When an acceptor atom replaces

14420-434: The mid-19th and first decades of the 20th century. The first practical application of semiconductors in electronics was the 1904 development of the cat's-whisker detector , a primitive semiconductor diode used in early radio receivers. Developments in quantum physics led in turn to the invention of the transistor in 1947 and the integrated circuit in 1958. Semiconductors in their natural state are poor conductors because

14560-564: The more reliable and amplified vacuum tube based radios, the cat's whisker systems quickly disappeared. The "cat's whisker" is a primitive example of a special type of diode still popular today, called a Schottky diode . Another early type of semiconductor device is the metal rectifier in which the semiconductor is copper oxide or selenium . Westinghouse Electric (1886) was a major manufacturer of these rectifiers. During World War II, radar research quickly pushed radar receivers to operate at ever higher frequencies about 4000 MHz and

14700-479: The most common Earth anion, oxygen . From this fact it is apparent that most of the space of a crystal is occupied by the anion and that the cations fit into the spaces between them." The terms anion and cation (for ions that respectively travel to the anode and cathode during electrolysis) were introduced by Michael Faraday in 1834 following his consultation with William Whewell . Ions are ubiquitous in nature and are responsible for diverse phenomena from

14840-504: The movement of charge carriers in a crystal lattice . Doping greatly increases the number of charge carriers within the crystal. When a semiconductor is doped by Group V elements, they will behave like donors creating free electrons , known as " n-type " doping. When a semiconductor is doped by Group III elements, they will behave like acceptors creating free holes, known as " p-type " doping. The semiconductor materials used in electronic devices are doped under precise conditions to control

14980-454: The mutual attraction of oppositely charged ions. Ions of like charge repel each other, and ions of opposite charge attract each other. Therefore, ions do not usually exist on their own, but will bind with ions of opposite charge to form a crystal lattice . The resulting compound is called an ionic compound , and is said to be held together by ionic bonding . In ionic compounds there arise characteristic distances between ion neighbours from which

15120-451: The nature of these species, but he knew that since metals dissolved into and entered a solution at one electrode and new metal came forth from a solution at the other electrode; that some kind of substance has moved through the solution in a current. This conveys matter from one place to the other. In correspondence with Faraday, Whewell also coined the words anode and cathode , as well as anion and cation as ions that are attracted to

15260-399: The operator to move a small tungsten filament (the whisker) around the surface of a galena (lead sulfide) or carborundum (silicon carbide) crystal until it suddenly started working. Then, over a period of a few hours or days, the cat's whisker would slowly stop working and the process would have to be repeated. At the time their operation was completely mysterious. After the introduction of

15400-449: The other. A slice cut from the specimen at the p–n boundary developed a voltage when exposed to light. The first working transistor was a point-contact transistor invented by John Bardeen , Walter Houser Brattain , and William Shockley at Bell Labs in 1947. Shockley had earlier theorized a field-effect amplifier made from germanium and silicon, but he failed to build such a working device, before eventually using germanium to invent

15540-506: The point-contact transistor. In France, during the war, Herbert Mataré had observed amplification between adjacent point contacts on a germanium base. After the war, Mataré's group announced their " Transistron " amplifier only shortly after Bell Labs announced the " transistor ". In 1954, physical chemist Morris Tanenbaum fabricated the first silicon junction transistor at Bell Labs . However, early junction transistors were relatively bulky devices that were difficult to manufacture on

15680-520: The principle behind the light-emitting diode . Oleg Losev observed similar light emission in 1922, but at the time the effect had no practical use. Power rectifiers, using copper oxide and selenium, were developed in the 1920s and became commercially important as an alternative to vacuum tube rectifiers. The first semiconductor devices used galena , including German physicist Ferdinand Braun's crystal detector in 1874 and Indian physicist Jagadish Chandra Bose's radio crystal detector in 1901. In

15820-562: The pure semiconductors, the electrical conductivity may be varied by factors of thousands or millions. A 1 cm specimen of a metal or semiconductor has the order of 10 atoms. In a metal, every atom donates at least one free electron for conduction, thus 1 cm of metal contains on the order of 10 free electrons, whereas a 1 cm sample of pure germanium at 20   °C contains about 4.2 × 10 atoms, but only 2.5 × 10 free electrons and 2.5 × 10 holes. The addition of 0.001% of arsenic (an impurity) donates an extra 10 free electrons in

15960-439: The region between the junctions is typically very narrow. The other regions, and their associated terminals, are known as the emitter and the collector . A small current injected through the junction between the base and the emitter changes the properties of the base-collector junction so that it can conduct current even though it is reverse biased. This creates a much larger current between the collector and emitter, controlled by

16100-629: The resistance of specimens of silver sulfide decreases when they are heated. This is contrary to the behavior of metallic substances such as copper. In 1839, Alexandre Edmond Becquerel reported observation of a voltage between a solid and a liquid electrolyte, when struck by light, the photovoltaic effect . In 1873, Willoughby Smith observed that selenium resistors exhibit decreasing resistance when light falls on them. In 1874, Karl Ferdinand Braun observed conduction and rectification in metallic sulfides , although this effect had been discovered earlier by Peter Munck af Rosenschöld ( sv ) writing for

16240-664: The respective electrodes. Svante Arrhenius put forth, in his 1884 dissertation, the explanation of the fact that solid crystalline salts dissociate into paired charged particles when dissolved, for which he would win the 1903 Nobel Prize in Chemistry. Arrhenius' explanation was that in forming a solution, the salt dissociates into Faraday's ions, he proposed that ions formed even in the absence of an electric current. Ions in their gas-like state are highly reactive and will rapidly interact with ions of opposite charge to give neutral molecules or ionic salts. Ions are also produced in

16380-532: The same volume and the electrical conductivity is increased by a factor of 10,000. The materials chosen as suitable dopants depend on the atomic properties of both the dopant and the material to be doped. In general, dopants that produce the desired controlled changes are classified as either electron acceptors or donors . Semiconductors doped with donor impurities are called n-type , while those doped with acceptor impurities are known as p-type . The n and p type designations indicate which charge carrier acts as

16520-471: The same way as the electron. Combined with the negative effective mass of the electrons at the top of the valence band, we arrive at a picture of a positively charged particle that responds to electric and magnetic fields just as a normal positively charged particle would do in a vacuum, again with some positive effective mass. This particle is called a hole, and the collection of holes in the valence band can again be understood in simple classical terms (as with

16660-590: The scale at which the materials are used. A high degree of crystalline perfection is also required, since faults in the crystal structure (such as dislocations , twins , and stacking faults ) interfere with the semiconducting properties of the material. Crystalline faults are a major cause of defective semiconductor devices. The larger the crystal, the more difficult it is to achieve the necessary perfection. Current mass production processes use crystal ingots between 100 and 300 mm (3.9 and 11.8 in) in diameter, grown as cylinders and sliced into wafers . There

16800-423: The semiconductor body by contact with gaseous compounds of the desired element, or ion implantation can be used to accurately position the doped regions. Some materials, when rapidly cooled to a glassy amorphous state, have semiconducting properties. These include B, Si , Ge, Se, and Te, and there are multiple theories to explain them. The history of the understanding of semiconductors begins with experiments on

16940-1001: The semiconductor composition and electrical current allows for the manipulation of the emitted light's properties. These semiconductors are used in the construction of light-emitting diodes and fluorescent quantum dots . Semiconductors with high thermal conductivity can be used for heat dissipation and improving thermal management of electronics. They play a crucial role in electric vehicles , high-brightness LEDs and power modules , among other applications. Semiconductors have large thermoelectric power factors making them useful in thermoelectric generators , as well as high thermoelectric figures of merit making them useful in thermoelectric coolers . A large number of elements and compounds have semiconducting properties, including: The most common semiconducting materials are crystalline solids, but amorphous and liquid semiconductors are also known. These include hydrogenated amorphous silicon and mixtures of arsenic , selenium , and tellurium in

17080-455: The silicon. After the process is completed and the silicon has reached room temperature, the doping process is done and the semiconducting wafer is almost prepared. Semiconductors are defined by their unique electric conductive behavior, somewhere between that of a conductor and an insulator. The differences between these materials can be understood in terms of the quantum states for electrons, each of which may contain zero or one electron (by

17220-434: The spatial extension and the ionic radius of individual ions may be derived. The most common type of ionic bonding is seen in compounds of metals and nonmetals (except noble gases , which rarely form chemical compounds). Metals are characterized by having a small number of electrons in excess of a stable, closed-shell electronic configuration . As such, they have the tendency to lose these extra electrons in order to attain

17360-426: The surface with the application of a small amount of charge from any other location on the crystal. Instead of needing a large supply of injected electrons, a very small number in the right place on the crystal would accomplish the same thing. Their understanding solved the problem of needing a very small control area to some degree. Instead of needing two separate semiconductors connected by a common, but tiny, region,

17500-405: The term Halbleiter (a semiconductor in modern meaning) in his Ph.D. thesis in 1910. Felix Bloch published a theory of the movement of electrons through atomic lattices in 1928. In 1930, B. Gudden  [ de ] stated that conductivity in semiconductors was due to minor concentrations of impurities. By 1931, the band theory of conduction had been established by Alan Herries Wilson and

17640-474: The traditional tube-based radio receivers no longer worked well. The introduction of the cavity magnetron from Britain to the United States in 1940 during the Tizard Mission resulted in a pressing need for a practical high-frequency amplifier. On a whim, Russell Ohl of Bell Laboratories decided to try a cat's whisker . By this point, they had not been in use for a number of years, and no one at

17780-438: The transistor were close enough to those of an earlier 1925 patent by Julius Edgar Lilienfeld that they thought it best that his name be left off the patent application. Shockley was incensed, and decided to demonstrate who was the real brains of the operation. A few months later he invented an entirely new, considerably more robust, bipolar junction transistor type of transistor with a layer or 'sandwich' structure, used for

17920-559: The transport of wafers from machine to machine. A wafer often has several integrated circuits which are called dies as they are pieces diced from a single wafer. Individual dies are separated from a finished wafer in a process called die singulation , also called wafer dicing. The dies can then undergo further assembly and packaging. Within fabrication plants, the wafers are transported inside special sealed plastic boxes called FOUPs . FOUPs in many fabs contain an internal nitrogen atmosphere which helps prevent copper from oxidizing on

18060-407: The two parts of the crystal were in contact with each other, the electrons could be pushed out of the conductive side which had extra electrons (soon to be known as the emitter ), and replaced by new ones being provided (from a battery, for instance) where they would flow into the insulating portion and be collected by the whisker filament (named the collector ). However, when the voltage was reversed

18200-406: The use of semiconductors, with the most important aspect being the integrated circuit (IC), which are found in desktops , laptops , scanners, cell-phones , and other electronic devices. Semiconductors for ICs are mass-produced. To create an ideal semiconducting material, chemical purity is paramount. Any small imperfection can have a drastic effect on how the semiconducting material behaves due to

18340-506: The vast majority of all transistors into the 1960s. With the fragility problems solved, the remaining problem was purity. Making germanium of the required purity was proving to be a serious problem and limited the yield of transistors that actually worked from a given batch of material. Germanium's sensitivity to temperature also limited its usefulness. Scientists theorized that silicon would be easier to fabricate, but few investigated this possibility. Former Bell Labs scientist Gordon K. Teal

18480-588: The wafer diameter to sizes significantly smaller than silicon wafers thus making mass production of GaAs devices significantly more expensive than silicon. Gallium Nitride (GaN) is gaining popularity in high-power applications including power ICs , light-emitting diodes (LEDs), and RF components due to its high strength and thermal conductivity. Compared to silicon, GaN's band gap is more than 3 times wider at 3.4 eV and it conducts electrons 1,000 times more efficiently. Other less common materials are also in use or under investigation. Silicon carbide (SiC)

18620-583: The wafer. At Bell Labs, the importance of Frosch and Derick technique and transistors was immediately realized. Results of their work circulated around Bell Labs in the form of BTL memos before being published in 1957. At Shockley Semiconductor , Shockley had circulated the preprint of their article in December 1956 to all his senior staff, including Jean Hoerni , who would later invent the planar process in 1959 while at Fairchild Semiconductor . Ion An ion ( / ˈ aɪ . ɒ n , - ən / )

18760-442: The wafers. Copper is used in modern semiconductors for wiring. The insides of the processing equipment and FOUPs is kept cleaner than the surrounding air in the cleanroom. This internal atmosphere is known as a mini-environment and helps improve yield which is the amount of working devices on a wafer. This mini environment is within an EFEM (equipment front end module) which allows a machine to receive FOUPs, and introduces wafers from

18900-406: The war, William Shockley decided to attempt the building of a triode -like semiconductor device. He secured funding and lab space, and went to work on the problem with Brattain and John Bardeen . The key to the development of the transistor was the further understanding of the process of the electron mobility in a semiconductor. It was realized that if there were some way to control the flow of

19040-408: The wedge was pushed down onto the surface of a crystal and voltage was applied to the other side (on the base of the crystal), current started to flow from one contact to the other as the base voltage pushed the electrons away from the base towards the other side near the contacts. The point-contact transistor had been invented. While the device was constructed a week earlier, Brattain's notes describe

19180-467: The years preceding World War II, infrared detection and communications devices prompted research into lead-sulfide and lead-selenide materials. These devices were used for detecting ships and aircraft, for infrared rangefinders, and for voice communication systems. The point-contact crystal detector became vital for microwave radio systems since available vacuum tube devices could not serve as detectors above about 4000 MHz; advanced radar systems relied on

19320-401: Was a widely used early semiconductor material but its thermal sensitivity makes it less useful than silicon. Today, germanium is often alloyed with silicon for use in very-high-speed SiGe devices; IBM is a major producer of such devices. Gallium arsenide (GaAs) is also widely used in high-speed devices but so far, it has been difficult to form large-diameter boules of this material, limiting

19460-636: Was sometimes poor. This was later explained by John Bardeen as due to the extreme "structure sensitive" behavior of semiconductors, whose properties change dramatically based on tiny amounts of impurities. Commercially pure materials of the 1920s containing varying proportions of trace contaminants produced differing experimental results. This spurred the development of improved material refining techniques, culminating in modern semiconductor refineries producing materials with parts-per-trillion purity. Devices using semiconductors were at first constructed based on empirical knowledge before semiconductor theory provided

19600-478: Was the first to develop a working silicon transistor at the nascent Texas Instruments , giving it a technological edge. From the late 1950s, most transistors were silicon-based. Within a few years transistor-based products, most notably easily portable radios, were appearing on the market. " Zone melting ", a technique using a band of molten material moving through the crystal, further increased crystal purity. In 1955, Carl Frosch and Lincoln Derick accidentally grew

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