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Dynamic random-access memory ( dynamic RAM or DRAM ) is a type of random-access semiconductor memory that stores each bit of data in a memory cell , usually consisting of a tiny capacitor and a transistor , both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory , DRAM is volatile memory (vs. non-volatile memory ), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence .

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119-697: Advanced-Random Access Memory ( RAM ) is a type of dynamic random-access memory (DRAM) based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the University of Granada (UGR), in Spain, in collaboration with the Centre National de la Recherche Scientifique (CNRS), in France. It was conceived by Noel Rodriguez (UGR), Francisco Gamiz (UGR) and Sorin Cristoloveanu (CNRS). A-RAM

238-411: A memory controller ; the memory controller needs to know DRAM parameters, especially memory timings , to initialize DRAMs, which may be different depending on different DRAM manufacturers and part numbers. DRAM had a 47% increase in the price-per-bit in 2017, the largest jump in 30 years since the 45% jump in 1988, while in recent years the price has been going down. In 2018, a "key characteristic of

357-558: A DRAM using a three-transistor cell that they had developed. This became the Intel 1102 in early 1970. However, the 1102 had many problems, prompting Intel to begin work on their own improved design, in secrecy to avoid conflict with Honeywell. This became the first commercially available DRAM, the Intel 1103 , in October 1970, despite initial problems with low yield until the fifth revision of

476-482: A Japanese patent of a memory circuit composed of several transistors and a capacitor, in 1967 they applied for a patent in the US. The earliest forms of DRAM mentioned above used bipolar transistors . While it offered improved performance over magnetic-core memory , bipolar DRAM could not compete with the lower price of the then-dominant magnetic-core memory. Capacitors had also been used for earlier memory schemes, such as

595-490: A chip units (SoCs) for the mobile computing and automotive market. Nvidia is also a dominant supplier of artificial intelligence (AI) hardware and software. Nvidia's professional line of GPUs are used for edge-to-cloud computing and in supercomputers and workstations for applications in fields such as architecture, engineering and construction, media and entertainment, automotive, scientific research, and manufacturing design. Its GeForce line of GPUs are aimed at

714-467: A collaboration with the Broad Institute of MIT and Harvard related to the entire suite of Nvidia's AI -powered healthcare software suite called Clara, that includes Parabricks and MONAI . Following U.S. Department of Commerce regulations which placed an embargo on exports to China of advanced microchips, which went into effect in October 2022, Nvidia saw its data center chip added to

833-421: A driver unless it is approved by Apple," suggesting a possible rift between the two companies. By January 2019, with still no sign of the enabling web drivers, Apple Insider weighed into the controversy with a claim that Apple management "doesn't want Nvidia support in macOS". The following month, Apple Insider followed this up with another claim that Nvidia support was abandoned because of "relational issues in

952-412: A logic one requires the wordline be driven to a voltage greater than the sum of V CC and the access transistor's threshold voltage (V TH ). This voltage is called V CC pumped (V CCP ). The time required to discharge a capacitor thus depends on what logic value is stored in the capacitor. A capacitor containing logic one begins to discharge when the voltage at the access transistor's gate terminal

1071-694: A new headquarters in the form of two giant triangle-shaped buildings on the other side of San Tomas Expressway (to the west of its existing headquarters complex). The company selected triangles as its design theme. As Huang explained in a blog post, the triangle is "the fundamental building block of computer graphics". In 2014, Nvidia ported the Valve games Portal and Half Life 2 to its Nvidia Shield tablet as Lightspeed Studio. Since 2014, Nvidia has diversified its business focusing on three markets: gaming, automotive electronics, and mobile devices. That same year, Nvidia also prevailed in litigation brought by

1190-445: A settlement, in which it would reimburse owners of the affected laptops for repairs or, in some cases, replacement. On January 10, 2011, Nvidia signed a six-year, $ 1.5 billion cross-licensing agreement with Intel, ending all litigation between the two companies. In November 2011, after initially unveiling it at Mobile World Congress , Nvidia released its ARM -based system on a chip for mobile devices, Tegra 3 . Nvidia claimed that

1309-518: A single bitline contact) from a column, then move the DRAM cells from an adjacent column into the voids. The location where the bitline twists occupies additional area. To minimize area overhead, engineers select the simplest and most area-minimal twisting scheme that is able to reduce noise under the specified limit. As process technology improves to reduce minimum feature sizes, the signal to noise problem worsens, since coupling between adjacent metal wires

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1428-407: A single chip, to accommodate more capacity without becoming too slow. When such a RAM is accessed by clocked logic, the times are generally rounded up to the nearest clock cycle. For example, when accessed by a 100 MHz state machine (i.e. a 10 ns clock), the 50 ns DRAM can perform the first read in five clock cycles, and additional reads within the same page every two clock cycles. This

1547-462: A time determined by an external timer function that governs the operation of the rest of a system, such as the vertical blanking interval that occurs every 10–20 ms in video equipment. The row address of the row that will be refreshed next is maintained by external logic or a counter within the DRAM. A system that provides the row address (and the refresh command) does so to have greater control over when to refresh and which row to refresh. This

1666-444: A value is read, modified, and then written back as a single, indivisible operation (Jacob, p. 459). The one-transistor, zero-capacitor (1T, or 1T0C) DRAM cell has been a topic of research since the late-1990s. 1T DRAM is a different way of constructing the basic DRAM memory cell, distinct from the classic one-transistor/one-capacitor (1T/1C) DRAM cell, which is also sometimes referred to as 1T DRAM , particularly in comparison to

1785-419: A very robust design for customer applications. At the 16 Kbit density, the cost advantage increased; the 16 Kbit Mostek MK4116 DRAM, introduced in 1976, achieved greater than 75% worldwide DRAM market share. However, as density increased to 64 Kbit in the early 1980s, Mostek and other US manufacturers were overtaken by Japanese DRAM manufacturers, which dominated the US and worldwide markets during

1904-546: A vision of the future which was so compelling that Huang decided to leave LSI and become the chief executive officer of their new startup . In 1993, the three co-founders envisioned that the ideal trajectory for the forthcoming wave of computing would be in the realm of accelerated computing, specifically in graphics-based processing. This path was chosen due to its unique ability to tackle challenges that eluded general-purpose computing methods. As Huang later explained: "We also observed that video games were simultaneously one of

2023-481: A wide margin. Due to the success of its products, Nvidia won the contract to develop the graphics hardware for Microsoft 's Xbox game console, which earned Nvidia a $ 200 million advance. However, the project took many of its best engineers away from other projects. In the short term this did not matter, and the GeForce2 GTS shipped in the summer of 2000. In December 2000, Nvidia reached an agreement to acquire

2142-514: A write-down of approximately $ 200 million on its first-quarter revenue, after reporting that certain mobile chipsets and GPUs produced by the company had "abnormal failure rates" due to manufacturing defects. Nvidia, however, did not reveal the affected products. In September 2008, Nvidia became the subject of a class action lawsuit over the defects, claiming that the faulty GPUs had been incorporated into certain laptop models manufactured by Apple Inc. , Dell , and HP . In September 2010, Nvidia reached

2261-450: Is 3-4-4-8 with a 200 MHz clock, while premium-priced high performance PC3200 DDR DRAM DIMM might be operated at 2-2-2-5 timing. Minimum random access time has improved from t RAC  = 50 ns to t RCD + t CL = 22.5 ns , and even the premium 20 ns variety is only 2.5 times faster than the asynchronous DRAM. CAS latency has improved even less, from t CAC = 13 ns to 10 ns. However,

2380-442: Is able to offer better long-term area efficiencies; since folded array architectures require increasingly complex folding schemes to match any advance in process technology. The relationship between process technology, array architecture, and area efficiency is an active area of research. The first DRAM integrated circuits did not have any redundancy. An integrated circuit with a defective DRAM cell would be discarded. Beginning with

2499-439: Is above V CCP . If the capacitor contains a logic zero, it begins to discharge when the gate terminal voltage is above V TH . Up until the mid-1980s, the capacitors in DRAM cells were co-planar with the access transistor (they were constructed on the surface of the substrate), thus they were referred to as planar capacitors. The drive to increase both density and, to a lesser extent, performance, required denser designs. This

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2618-430: Is compatible with single-gate silicon on insulator (SOI), double-gate, FinFETs and multiple-gate field-effect transistors (MuFETs). The conventional 1-transistor + 1-capacitor DRAM is extensively used in the semiconductor industry for manufacturing high-density dynamic memories. In 2009, the researchers thought that in manufacturing processes with features smaller than 45 nm, the DRAM industry would need to avoid

2737-489: Is designed to improve the quality of multi-monitor and virtual reality rendering. Laptops that include these GPUs and are sufficiently thin – as of late 2017, under 0.8 inches (20 mm) – have been designated as meeting Nvidia's "Max-Q" design standard. In July 2016, Nvidia agreed to a settlement for a false advertising lawsuit regarding its GTX 970 model, as the models were unable to use all of their advertised 4 GB of VRAM due to limitations brought by

2856-413: Is done to minimize conflicts with memory accesses, since such a system has both knowledge of the memory access patterns and the refresh requirements of the DRAM. When the row address is supplied by a counter within the DRAM, the system relinquishes control over which row is refreshed and only provides the refresh command. Some modern DRAMs are capable of self-refresh; no external logic is required to instruct

2975-436: Is fully at its highest voltage and the other bit-line is at the lowest possible voltage. To store data, a row is opened and a given column's sense amplifier is temporarily forced to the desired high or low-voltage state, thus causing the bit-line to charge or discharge the cell storage capacitor to the desired value. Due to the sense amplifier's positive feedback configuration, it will hold a bit-line at stable voltage even after

3094-405: Is given as n F , where n is a number derived from the DRAM cell design, and F is the smallest feature size of a given process technology. This scheme permits comparison of DRAM size over different process technology generations, as DRAM cell area scales at linear or near-linear rates with respect to feature size. The typical area for modern DRAM cells varies between 6–8 F . The horizontal wire,

3213-424: Is inversely proportional to their pitch. The array folding and bitline twisting schemes that are used must increase in complexity in order to maintain sufficient noise reduction. Schemes that have desirable noise immunity characteristics for a minimal impact in area is the topic of current research (Kenner, p. 37). Advances in process technology could result in open bitline array architectures being favored if it

3332-408: Is limited by its capacitance (which increases with length), which must be kept within a range for proper sensing (as DRAMs operate by sensing the charge of the capacitor released onto the bitline). Bitline length is also limited by the amount of operating current the DRAM can draw and by how power can be dissipated, since these two characteristics are largely determined by the charging and discharging of

3451-481: Is offset by the structural simplicity of DRAM memory cells: only one transistor and a capacitor are required per bit, compared to four or six transistors in SRAM. This allows DRAM to reach very high densities with a simultaneous reduction in cost per bit. Refreshing the data consumes power, causing a variety of techniques to be used to manage the overall power consumption. For this reason, DRAM usually needs to operate with

3570-537: Is the best way to describe it. An hour of sushi and begging". In October 2023, it was reported that Nvidia had quietly begun designing ARM-based central processing units (CPUs) for Microsoft's Windows operating system with a target to start selling them in 2025. In January 2024, Forbes reported that Nvidia has increased its lobbying presence in Washington, D.C. as American lawmakers consider proposals to regulate artificial intelligence . From 2023 to 2024,

3689-489: Is the clearest way to compare between the performance of different DRAM memories, as it sets the slower limit regardless of the row length or page size. Bigger arrays forcibly result in larger bit line capacitance and longer propagation delays, which cause this time to increase as the sense amplifier settling time is dependent on both the capacitance as well as the propagation latency. This is countered in modern DRAM chips by instead integrating many more complete DRAM arrays within

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3808-776: Is thirty days from going out of business". Huang routinely began presentations to Nvidia staff with those words for many years. Nvidia sold about a million RIVA 128s in about four months and used the revenue to develop its next generation of products. In 1998, the release of the RIVA TNT solidified Nvidia's reputation for developing capable graphics adapters. Nvidia went public on January 22, 1999. Investing in Nvidia after it had already failed to deliver on its contract turned out to be Irimajiri's best decision as Sega's president. After Irimajiri left Sega in 2000, Sega sold its Nvidia stock for $ 15 million. In late 1999, Nvidia released

3927-443: Is usually arranged in a rectangular array of charge storage cells consisting of one capacitor and transistor per data bit. The figure to the right shows a simple example with a four-by-four cell matrix. Some DRAM matrices are many thousands of cells in height and width. The long horizontal lines connecting each row are known as word-lines. Each column of cells is composed of two bit-lines, each connected to every other storage cell in

4046-840: The CUDA software platform and API that allows the creation of massively parallel programs which utilize GPUs. They are deployed in supercomputing sites around the world. In the late 2000s, Nvidia had moved into the mobile computing market, where it produces Tegra mobile processors for smartphones and tablets as well as vehicle navigation and entertainment systems. Its competitors include AMD , Intel , Qualcomm , and AI accelerator companies such as Cerebras and Graphcore . It also makes AI-powered software for audio and video processing (e.g., Nvidia Maxine ). Nvidia's offer to acquire Arm from SoftBank in September 2020 failed to materialize following extended regulatory scrutiny, leading to

4165-456: The GeForce 256 (NV10), its first product expressly marketed as a GPU, which was most notable for introducing onboard transformation and lighting (T&L) to consumer-level 3D hardware. Running at 120 MHz and featuring four-pixel pipelines, it implemented advanced video acceleration, motion compensation, and hardware sub-picture alpha blending. The GeForce outperformed existing products by

4284-472: The JEDEC standard. Some systems refresh every row in a burst of activity involving all rows every 64 ms. Other systems refresh one row at a time staggered throughout the 64 ms interval. For example, a system with 2  = 8,192 rows would require a staggered refresh rate of one row every 7.8 μs which is 64 ms divided by 8,192 rows. A few real-time systems refresh a portion of memory at

4403-478: The masks . The 1103 was designed by Joel Karp and laid out by Pat Earhart. The masks were cut by Barbara Maness and Judy Garcia. MOS memory overtook magnetic-core memory as the dominant memory technology in the early 1970s. The first DRAM with multiplexed row and column address lines was the Mostek MK4096 4 Kbit DRAM designed by Robert Proebsting and introduced in 1973. This addressing scheme uses

4522-520: The triangle primitives preferred by its competitors. Then Microsoft introduced the DirectX platform, refused to support any other graphics software, and also announced that its graphics software ( Direct3D ) would support only triangles. Nvidia also signed a contract with Sega to build the graphics chip for the Dreamcast video game console and worked on the project for a year. Having bet on

4641-404: The /RAS low to valid data out time. This is the time to open a row, settle the sense amplifiers, and deliver the selected column data to the output. This is also the minimum /RAS low time, which includes the time for the amplified data to be delivered back to recharge the cells. The time to read additional bits from an open page is much less, defined by the /CAS to /CAS cycle time. The quoted number

4760-500: The 1980s and 1990s. Early in 1985, Gordon Moore decided to withdraw Intel from producing DRAM. By 1986, many, but not all, United States chip makers had stopped making DRAMs. Micron Technology and Texas Instruments continued to produce them commercially, and IBM produced them for internal use. In 1985, when 64K DRAM memory chips were the most common memory chips used in computers, and when more than 60 percent of those chips were produced by Japanese companies, semiconductor makers in

4879-504: The 3T and 4T DRAM which it replaced in the 1970s. In 1T DRAM cells, the bit of data is still stored in a capacitive region controlled by a transistor, but this capacitance is no longer provided by a separate capacitor. 1T DRAM is a "capacitorless" bit cell design that stores data using the parasitic body capacitance that is inherent to silicon on insulator (SOI) transistors. Considered a nuisance in logic design, this floating body effect can be used for data storage. This gives 1T DRAM cells

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4998-464: The 3T1C cell for performance reasons (Kenner, p. 6). These performance advantages included, most significantly, the ability to read the state stored by the capacitor without discharging it, avoiding the need to write back what was read out (non-destructive read). A second performance advantage relates to the 3T1C cell's separate transistors for reading and writing; the memory controller can exploit this feature to perform atomic read-modify-writes, where

5117-462: The 64 Kbit generation, DRAM arrays have included spare rows and columns to improve yields. Spare rows and columns provide tolerance of minor fabrication defects which have caused a small number of rows or columns to be inoperable. The defective rows and columns are physically disconnected from the rest of the array by a triggering a programmable fuse or by cutting the wire by a laser. The spare rows or columns are substituted in by remapping logic in

5236-507: The DDR3 memory does achieve 32 times higher bandwidth; due to internal pipelining and wide data paths, it can output two words every 1.25 ns (1 600  Mword/s) , while the EDO DRAM can output one word per t PC  = 20 ns (50 Mword/s). Each bit of data in a DRAM is stored as a positive or negative electrical charge in a capacitive structure. The structure providing

5355-476: The DRAM market is that there are currently only three major suppliers — Micron Technology , SK Hynix and Samsung Electronics " that are "keeping a pretty tight rein on their capacity". There is also Kioxia (previously Toshiba Memory Corporation after 2017 spin-off) which doesn't manufacture DRAM. Other manufacturers make and sell DIMMs (but not the DRAM chips in them), such as Kingston Technology , and some manufacturers that sell stacked DRAM (used e.g. in

5474-400: The DRAM to refresh or to provide a row address. Under some conditions, most of the data in DRAM can be recovered even if the DRAM has not been refreshed for several minutes. Many parameters are required to fully describe the timing of DRAM operation. Here are some examples for two timing grades of asynchronous DRAM, from a data sheet published in 1998: Thus, the generally quoted number is

5593-625: The Dreamcast. However, Irimajiri still believed in Huang, and "wanted to make Nvidia successful". Despite Nvidia's disappointing failure to deliver on its contract, Irimajiri somehow managed to convince Sega's management to invest $ 5 million into Nvidia. Years later, Huang explained that this was all the money Nvidia had left at the time, and that Irimajiri's "understanding and generosity gave us six months to live". In 1996, Huang laid off more than half of Nvidia's employees—then around 100—and focused

5712-475: The Nvidia A100 GPU accelerator. In July 2020, it was reported that Nvidia was in talks with SoftBank to buy Arm , a UK-based chip designer, for $ 32 billion. On September 1, 2020, Nvidia officially announced the GeForce 30 series based on the company's new Ampere microarchitecture. On September 13, 2020, Nvidia announced that they would buy Arm from SoftBank Group for $ 40 billion, subject to

5831-1102: The Nvidia user forum, a thread was started asking the company to update users when they would release web drivers for its cards installed on legacy Mac Pro machines up to mid-2012 5,1 running the macOS Mojave operating system 10.14. Web drivers are required to enable graphics acceleration and multiple display monitor capabilities of the GPU. On its Mojave update info website, Apple stated that macOS Mojave would run on legacy machines with ' Metal compatible ' graphics cards and listed Metal compatible GPUs, including some manufactured by Nvidia. However, this list did not include Metal compatible cards that currently work in macOS High Sierra using Nvidia-developed web drivers. In September, Nvidia responded, "Apple fully controls drivers for macOS. But if Apple allows, our engineers are ready and eager to help Apple deliver great drivers for macOS 10.14 (Mojave)." In October, Nvidia followed this up with another public announcement, "Apple fully controls drivers for macOS. Unfortunately, Nvidia currently cannot release

5950-524: The UK, and further the groundbreaking work being done by the nation's researchers in critical healthcare and drug discovery." Also in October 2020, along with the release of the Nvidia RTX A6000, Nvidia announced it is retiring its workstation GPU brand Quadro, shifting its product name to Nvidia RTX for future products and the manufacturing to be Nvidia Ampere architecture -based. In August 2021,

6069-557: The United States accused Japanese companies of export dumping for the purpose of driving makers in the United States out of the commodity memory chip business. Prices for the 64K product plummeted to as low as 35 cents apiece from $ 3.50 within 18 months, with disastrous financial consequences for some U.S. firms. On 4 December 1985 the US Commerce Department's International Trade Administration ruled in favor of

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6188-568: The Year for 2007, citing the accomplishments it made during the said period as well as during the previous five years. On January 5, 2007, Nvidia announced that it had completed the acquisition of PortalPlayer, Inc. In February 2008, Nvidia acquired Ageia , developer of PhysX , a physics engine and physics processing unit . Nvidia announced that it planned to integrate the PhysX technology into its future GPU products. In July 2008, Nvidia took

6307-479: The bitline, which is almost always made of polysilicon, but is otherwise identical to the COB variation. The advantage the COB variant possesses is the ease of fabricating the contact between the bitline and the access transistor's source as it is physically close to the substrate surface. However, this requires the active area to be laid out at a 45-degree angle when viewed from above, which makes it difficult to ensure that

6426-415: The bitline. Sense amplifiers are required to read the state contained in the DRAM cells. When the access transistor is activated, the electrical charge in the capacitor is shared with the bitline. The bitline's capacitance is much greater than that of the capacitor (approximately ten times). Thus, the change in bitline voltage is minute. Sense amplifiers are required to resolve the voltage differential into

6545-436: The bitlines are divided into multiple segments, and the differential sense amplifiers are placed in between bitline segments. Because the sense amplifiers are placed between bitline segments, to route their outputs outside the array, an additional layer of interconnect placed above those used to construct the wordlines and bitlines is required. The DRAM cells that are on the edges of the array do not have adjacent segments. Since

6664-417: The capacitance can be increased by etching a deeper hole without any increase to surface area (Kenner, p. 44). Another advantage of the trench capacitor is that its structure is under the layers of metal interconnect, allowing them to be more easily made planar, which enables it to be integrated in a logic-optimized process technology, which have many levels of interconnect above the substrate. The fact that

6783-406: The capacitance, as well as the transistors that control access to it, is collectively referred to as a DRAM cell . They are the fundamental building block in DRAM arrays. Multiple DRAM memory cell variants exist, but the most commonly used variant in modern DRAMs is the one-transistor, one-capacitor (1T1C) cell. The transistor is used to admit current into the capacitor during writes, and to discharge

6902-410: The capacitor contact does not touch the bitline. CUB cells avoid this, but suffer from difficulties in inserting contacts in between bitlines, since the size of features this close to the surface are at or near the minimum feature size of the process technology (Kenner, pp. 33–42). The trench capacitor is constructed by etching a deep hole into the silicon substrate. The substrate volume surrounding

7021-417: The capacitor during reads. The access transistor is designed to maximize drive strength and minimize transistor-transistor leakage (Kenner, p. 34). The capacitor has two terminals, one of which is connected to its access transistor, and the other to either ground or V CC /2. In modern DRAMs, the latter case is more common, since it allows faster operation. In modern DRAMs, a voltage of +V CC /2 across

7140-405: The capacitor is required to store a logic one; and a voltage of −V CC /2 across the capacitor is required to store a logic zero. The resultant charge is Q = ± V C C 2 ⋅ C {\textstyle Q=\pm {V_{CC} \over 2}\cdot C} , where Q is the charge in coulombs and C is the capacitance in farads . Reading or writing

7259-410: The capacitor is under the logic means that it is constructed before the transistors are. This allows high-temperature processes to fabricate the capacitors, which would otherwise degrade the logic transistors and their performance. This makes trench capacitors suitable for constructing embedded DRAM (eDRAM) (Jacob, p. 357). Disadvantages of trench capacitors are difficulties in reliably constructing

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7378-426: The capacitor to the write bitline just as in the 1T1C cell, but there was a separate read wordline and read transistor which connected an amplifier transistor to the read bitline. By the second generation, the drive to reduce cost by fitting the same amount of bits in a smaller area led to the almost universal adoption of the 1T1C DRAM cell, although a couple of devices with 4 and 16 Kbit capacities continued to use

7497-404: The capacitor's structures within deep holes and in connecting the capacitor to the access transistor's drain terminal (Kenner, p. 44). First-generation DRAM ICs (those with capacities of 1 Kbit), such as the archetypical Intel 1103 , used a three-transistor, one-capacitor (3T1C) DRAM cell with separate read and write circuitry. The write wordline drove a write transistor which connected

7616-508: The characteristics of MOS technology, he found it was capable of building capacitors, and that storing a charge or no charge on the MOS capacitor could represent the 1 and 0 of a bit, while the MOS transistor could control writing the charge to the capacitor. This led to his development of the single-transistor MOS DRAM memory cell. He filed a patent in 1967, and was granted U.S. patent number 3,387,286 in 1968. MOS memory offered higher performance,

7735-532: The characters on it "were remembered in a dynamic store." The store used a large bank of capacitors, which were either charged or not, a charged capacitor representing cross (1) and an uncharged capacitor dot (0). Since the charge gradually leaked away, a periodic pulse was applied to top up those still charged (hence the term 'dynamic')". In November 1965, Toshiba introduced a bipolar dynamic RAM for its electronic calculator Toscal BC-1411. In 1966, Tomohisa Yoshimaru and Hiroshi Komikawa from Toshiba applied for

7854-606: The chip featured the first-ever quad-core mobile CPU. In May 2011, it was announced that Nvidia had agreed to acquire Icera , a baseband chip making company in the UK, for $ 367 million. In January 2013, Nvidia unveiled the Tegra 4 , as well as the Nvidia Shield , an Android -based handheld game console powered by the new system on a chip. On July 29, 2013, Nvidia announced that they acquired PGI from STMicroelectronics. In February 2013, Nvidia announced its plans to build

7973-620: The circuitry used to read/write them. Nvidia Nvidia Corporation ( / ɛ n ˈ v ɪ d i ə / , en- VID -ee-ə ) is an American multinational corporation and technology company headquartered in Santa Clara, California , and incorporated in Delaware . It is a software and fabless company which designs and supplies graphics processing units (GPUs), application programming interfaces (APIs) for data science and high-performance computing , as well as system on

8092-482: The column (the illustration to the right does not include this important detail). They are generally known as the + and − bit lines. A sense amplifier is essentially a pair of cross-connected inverters between the bit-lines. The first inverter is connected with input from the + bit-line and output to the − bit-line. The second inverter's input is from the − bit-line with output to the + bit-line. This results in positive feedback which stabilizes after one bit-line

8211-597: The commercialized Z-RAM from Innovative Silicon, the TTRAM from Renesas and the A-RAM from the UGR / CNRS consortium. DRAM cells are laid out in a regular rectangular, grid-like pattern to facilitate their control and access via wordlines and bitlines. The physical layout of the DRAM cells in an array is typically designed so that two adjacent DRAM cells in a column share a single bitline contact to reduce their area. DRAM cell area

8330-555: The company NVision, but that name was already taken by a manufacturer of toilet paper. Huang suggested the name Nvidia, from " invidia ", the Latin word for "envy". The company's original headquarters office was in Sunnyvale, California . Nvidia's first graphics accelerator product, the NV1 , was optimized for processing quadrilateral primitives ( forward texture mapping ) instead of

8449-626: The company reportedly hired at least four government affairs with professional backgrounds at agencies including the United States Department of State and the Department of the Treasury . It was noted that the $ 350,000 spent by the company on lobbying in 2023 was small compared to a number of major tech companies in the artificial intelligence space. As of January 2024, Raymond James Financial analysts estimated that Nvidia

8568-605: The company's remaining resources on developing a graphics accelerator product optimized for processing triangle primitives: the RIVA 128 . By the time the RIVA 128 was released in August 1997, Nvidia was down to about 40 employees and only had enough money left for about one month of payroll. The sense of extreme desperation around Nvidia during this difficult era of its early history gave rise to "the unofficial company motto": "Our company

8687-588: The complaint. Synchronous dynamic random-access memory (SDRAM) was developed by Samsung . The first commercial SDRAM chip was the Samsung KM48SL2000, which had a capacity of 16   Mb , and was introduced in 1992. The first commercial DDR SDRAM ( double data rate SDRAM) memory chip was Samsung's 64   Mb DDR SDRAM chip, released in 1998. Later, in 2001, Japanese DRAM makers accused Korean DRAM manufacturers of dumping. In 2002, US computer makers made claims of DRAM price fixing . DRAM

8806-646: The consumer market and are used in applications such as video editing , 3D rendering , and PC gaming . With a market share of 80.2% in the second quarter of 2023, Nvidia leads the market for discrete desktop GPUs by a wide margin. The company expanded its presence in the gaming industry with the introduction of the Shield Portable (a handheld game console ), Shield Tablet (a gaming tablet ), and Shield TV (a digital media player ), as well as its cloud gaming service GeForce Now . In addition to GPU design and outsourcing manufacturing, Nvidia provides

8925-456: The design of its hardware. In May 2017, Nvidia announced a partnership with Toyota which will use Nvidia's Drive PX-series artificial intelligence platform for its autonomous vehicles. In July 2017, Nvidia and Chinese search giant Baidu announced a far-reaching AI partnership that includes cloud computing, autonomous driving, consumer devices, and Baidu's open-source AI framework PaddlePaddle. Baidu unveiled that Nvidia's Drive PX 2 AI will be

9044-412: The differential sense amplifiers require identical capacitance and bitline lengths from both segments, dummy bitline segments are provided. The advantage of the open bitline array is a smaller array area, although this advantage is slightly diminished by the dummy bitline segments. The disadvantage that caused the near disappearance of this architecture is the inherent vulnerability to noise , which affects

9163-652: The drum of the Atanasoff–Berry Computer , the Williams tube and the Selectron tube . In 1966, Dr. Robert Dennard invented modern DRAM architecture in which there's a single MOS transistor per capacitor, at the IBM Thomas J. Watson Research Center , while he was working on MOS memory and was trying to create an alternative to SRAM which required six MOS transistors for each bit of data. While examining

9282-558: The effectiveness of the differential sense amplifiers. Since each bitline segment does not have any spatial relationship to the other, it is likely that noise would affect only one of the two bitline segments. The folded bitline array architecture routes bitlines in pairs throughout the array. The close proximity of the paired bitlines provide superior common-mode noise rejection characteristics over open bitline arrays. The folded bitline array architecture began appearing in DRAM ICs during

9401-728: The export control list. The next month, the company unveiled a new advanced chip in China, called the A800 GPU, that met the export control rules. In September 2023, Getty Images announced that it was partnering with Nvidia to launch Generative AI by Getty Images, a new tool that lets people create images using Getty's library of licensed photos. Getty will use Nvidia's Edify model, which is available on Nvidia's generative AI model library Picasso. On September 26, 2023, Denny's CEO Kelli Valade joined Huang in East San Jose to celebrate

9520-453: The fastest supercomputers on the exascale ), separately such as Viking Technology . Others sell such integrated into other products, such as Fujitsu into its CPUs, AMD in GPUs, and Nvidia , with HBM2 in some of their GPU chips. The cryptanalytic machine code-named Aquarius used at Bletchley Park during World War II incorporated a hard-wired dynamic memory. Paper tape was read and

9639-462: The first GPUs of the GeForce 10 series , the GTX 1080 and 1070, based on the company's new Pascal microarchitecture. Nvidia claimed that both models outperformed its Maxwell -based Titan X model; the models incorporate GDDR5X and GDDR5 memory respectively, and use a 16 nm manufacturing process. The architecture also supports a new hardware feature known as simultaneous multi-projection (SMP), which

9758-418: The forcing voltage is removed. During a write to a particular cell, all the columns in a row are sensed simultaneously just as during reading, so although only a single column's storage-cell capacitor charge is changed, the entire row is refreshed (written back in), as illustrated in the figure to the right. Typically, manufacturers specify that each row must be refreshed every 64 ms or less, as defined by

9877-585: The foundation of its autonomous-vehicle platform. Nvidia officially released the Titan V on December 7, 2017. Nvidia officially released the Nvidia Quadro GV100 on March 27, 2018. Nvidia officially released the RTX 2080 GPUs on September 27, 2018. In 2018, Google announced that Nvidia's Tesla P4 graphic cards would be integrated into Google Cloud service's artificial intelligence. In May 2018, on

9996-538: The founding of Nvidia at Denny's on Berryessa Road, where a plaque was installed to mark the relevant corner booth as the birthplace of a $ 1 trillion company. By then, Nvidia's H100 GPUs were in such demand that even other tech giants were beholden to how Nvidia allocated supply. Larry Ellison of Oracle Corporation said that month that during a dinner with Huang at Nobu in Palo Alto , he and Elon Musk of Tesla, Inc. and xAI "were begging" for H100s, "I guess

10115-512: The greatest density as well as allowing easier integration with high-performance logic circuits since they are constructed with the same SOI process technologies. Refreshing of cells remains necessary, but unlike with 1T1C DRAM, reads in 1T DRAM are non-destructive; the stored charge causes a detectable shift in the threshold voltage of the transistor. Performance-wise, access times are significantly better than capacitor-based DRAMs, but slightly worse than SRAM. There are several types of 1T DRAMs:

10234-489: The hole is then heavily doped to produce a buried n plate with low resistance. A layer of oxide-nitride-oxide dielectric is grown or deposited, and finally the hole is filled by depositing doped polysilicon, which forms the top plate of the capacitor. The top of the capacitor is connected to the access transistor's drain terminal via a polysilicon strap (Kenner, pp. 42–44). A trench capacitor's depth-to-width ratio in DRAMs of

10353-604: The intellectual assets of its one-time rival 3dfx , a pioneer in consumer 3D graphics technology leading the field from the mid-1990s until 2000. The acquisition process was finalized in April 2002. In 2001, Standard & Poor's selected Nvidia to replace the departing Enron in the S&;P 500 stock index, meaning that index funds would need to hold Nvidia shares going forward. In July 2002, Nvidia acquired Exluna for an undisclosed sum. Exluna made software-rendering tools and

10472-476: The late 1990s, Nvidia was one of 70 startup companies chasing the idea that graphics acceleration for video games was the path to the future. Only two survived: Nvidia and ATI Technologies , which merged into AMD. Nvidia initially had no name and the co-founders named all their files NV, as in "next version". The need to incorporate the company prompted the co-founders to review all words with those two letters. At one point, Malachowsky and Priem wanted to call

10591-425: The lengths of the bitlines and the number of attached DRAM cells attached to them are equal, two basic architectures to array design have emerged to provide for the requirements of the sense amplifiers: open and folded bitline arrays. The first generation (1 Kbit) DRAM ICs, up until the 64 Kbit generation (and some 256 Kbit generation devices) had open bitline array architectures. In these architectures,

10710-471: The levels specified by the logic signaling system. Modern DRAMs use differential sense amplifiers, and are accompanied by requirements as to how the DRAM arrays are constructed. Differential sense amplifiers work by driving their outputs to opposing extremes based on the relative voltages on pairs of bitlines. The sense amplifiers function effectively and efficient only if the capacitance and voltages of these bitline pairs are closely matched. Besides ensuring that

10829-404: The main memory is called the graphics memory ). It is also used in many portable devices and video game consoles. In contrast, SRAM, which is faster and more expensive than DRAM, is typically used where speed is of greater concern than cost and size, such as the cache memories in processors . The need to refresh DRAM demands more complicated circuitry and timing than SRAM. This complexity

10948-402: The mid-1980s, beginning with the 256 Kbit generation. This architecture is favored in modern DRAM ICs for its superior noise immunity. This architecture is referred to as folded because it takes its basis from the open array architecture from the perspective of the circuit schematic. The folded array architecture appears to remove DRAM cells in alternate pairs (because two DRAM cells share

11067-407: The mid-2000s can exceed 50:1 (Jacob, p. 357). Trench capacitors have numerous advantages. Since the capacitor is buried in the bulk of the substrate instead of lying on its surface, the area it occupies can be minimized to what is required to connect it to the access transistor's drain terminal without decreasing the capacitor's size, and thus capacitance (Jacob, pp. 356–357). Alternatively,

11186-409: The miniaturization issue of the memory-cell capacitor. The 1T-DRAM family of memories, including A-RAM, replaced the storage capacitor for the floating body of SOI transistors to store the charge. The universities obtained at least one patent on the technology, and tried to license it in 2010. The University of Granada ran a web site promoting the technology, updated through 2010. A version called A2RAM

11305-462: The most computationally challenging problems and would have incredibly high sales volume. Those two conditions don’t happen very often. Video games was our killer app — a flywheel to reach large markets funding huge R&D to solve massive computational problems." With $ 40,000 in the bank, the company was born. The company subsequently received $ 20 million of venture capital funding from Sequoia Capital , Sutter Hill Ventures and others. During

11424-519: The new laptop is going to be seven times faster than a top-end MacBook Pro with a Core i9 and AMD's Radeon Pro Vega 20 graphics in apps like Maya and RedCine-X Pro. In August 2019, Nvidia announced Minecraft RTX , an official Nvidia-developed patch for the game Minecraft adding real-time DXR ray tracing exclusively to the Windows 10 version of the game. The whole game is, in Nvidia's words, "refit" with path tracing , which dramatically affects

11543-505: The past", and that Apple was developing its own GPU technology. Without Apple-approved Nvidia web drivers, Apple users are faced with replacing their Nvidia cards with a competing supported brand, such as AMD Radeon from the list recommended by Apple. On March 11, 2019, Nvidia announced a deal to buy Mellanox Technologies for $ 6.9 billion to substantially expand its footprint in the high-performance computing market. In May 2019, Nvidia announced new RTX Studio laptops. The creators say that

11662-575: The personnel were merged into the Cg project. In August 2003, Nvidia acquired MediaQ for approximately US$ 70 million. On April 22, 2004, Nvidia acquired iReady, also a provider of high-performance TCP offload engines and iSCSI controllers. In December 2004, it was announced that Nvidia would assist Sony with the design of the graphics processor ( RSX ) for the PlayStation 3 game console. On December 14, 2005, Nvidia acquired ULI Electronics , which at

11781-633: The proposed takeover of Arm was stalled after the UK's Competition and Markets Authority raised "significant competition concerns". In October 2021, the European Commission opened a competition investigation into the takeover. The Commission stated that Nvidia's acquisition could restrict competitors' access to Arm's products and provide Nvidia with too much internal information on its competitors due to their deals with Arm. SoftBank (the parent company of Arm) and Nvidia announced in early February 2022 that they "had agreed not to move forward with

11900-422: The row and column decoders (Jacob, pp. 358–361). Electrical or magnetic interference inside a computer system can cause a single bit of DRAM to spontaneously flip to the opposite state. The majority of one-off (" soft ") errors in DRAM chips occur as a result of background radiation , chiefly neutrons from cosmic ray secondaries, which may change the contents of one or more memory cells or interfere with

12019-399: The same address pins to receive the low half and the high half of the address of the memory cell being referenced, switching between the two halves on alternating bus cycles. This was a radical advance, effectively halving the number of address lines required, which enabled it to fit into packages with fewer pins, a cost advantage that grew with every jump in memory size. The MK4096 proved to be

12138-399: The stacked capacitor, based on its location relative to the bitline—capacitor-under-bitline (CUB) and capacitor-over-bitline (COB). In the former, the capacitor is underneath the bitline, which is usually made of metal, and the bitline has a polysilicon contact that extends downwards to connect it to the access transistor's source terminal. In the latter, the capacitor is constructed above

12257-462: The substrate surface are referred to as trench capacitors. In the 2000s, manufacturers were sharply divided by the type of capacitor used in their DRAMs and the relative cost and long-term scalability of both designs have been the subject of extensive debate. The majority of DRAMs, from major manufactures such as Hynix , Micron Technology , Samsung Electronics use the stacked capacitor structure, whereas smaller manufacturers such Nanya Technology use

12376-523: The termination of the deal in February 2022 in what would have been the largest semiconductor acquisition. In 2023, Nvidia became the seventh public U.S. company to be valued at over $ 1 trillion , and the company's valuation has skyrocketed since then as the company became a leader in data center chips with AI capabilities in the midst of the AI boom . In June 2024, for one day, Nvidia overtook Microsoft as

12495-427: The time supplied third-party southbridge parts for chipsets to ATI , Nvidia's competitor. In March 2006, Nvidia acquired Hybrid Graphics . In December 2006, Nvidia, along with its main rival in the graphics industry AMD (which had acquired ATI), received subpoenas from the U.S. Department of Justice regarding possible antitrust violations in the graphics card industry. Forbes named Nvidia its Company of

12614-452: The transaction 'because of significant regulatory challenges'". The investigation is set to end on March 15, 2022. That same month, Nvidia was reportedly compromised by a cyberattack. In March 2022, Nvidia's CEO Jensen Huang mentioned that they are open to having Intel manufacture their chips in the future. This was the first time the company mentioned that they would work together with Intel's upcoming foundry services. In April 2022, it

12733-453: The trench capacitor structure (Jacob, pp. 355–357). The capacitor in the stacked capacitor scheme is constructed above the surface of the substrate. The capacitor is constructed from an oxide-nitride-oxide (ONO) dielectric sandwiched in between two layers of polysilicon plates (the top plate is shared by all DRAM cells in an IC), and its shape can be a rectangle, a cylinder, or some other more complex shape. There are two basic variations of

12852-524: The trustee of 3dfx's bankruptcy estate to challenge its 2000 acquisition of 3dfx's intellectual assets. On November 6, 2014, in an unpublished memorandum order, the U.S. Court of Appeals for the Ninth Circuit affirmed the "district court's judgment affirming the bankruptcy court's determination that [Nvidia] did not pay less than fair market value for assets purchased from 3dfx shortly before 3dfx filed for bankruptcy". On May 6, 2016, Nvidia unveiled

12971-523: The usual scrutiny, with the latter retaining a 10% share of Nvidia. In October 2020, Nvidia announced its plan to build the most powerful computer in Cambridge , England. The computer, called Cambridge-1, launched in July 2021 with a $ 100 million investment and will employ AI to support healthcare research . According to Jensen Huang, "The Cambridge-1 supercomputer will serve as a hub of innovation for

13090-462: The way light, reflections, and shadows work inside the engine. In May 2020, Nvidia announced it was acquiring Cumulus Networks . Post acquisition the company was absorbed into Nvidia's networking business unit, along with Mellanox . In May 2020, Nvidia's developed an open-source ventilator to address the shortage resulting from the global coronavirus pandemic . On May 14, 2020, Nvidia officially announced their Ampere GPU microarchitecture and

13209-482: The wordline, is connected to the gate terminal of every access transistor in its row. The vertical bitline is connected to the source terminal of the transistors in its column. The lengths of the wordlines and bitlines are limited. The wordline length is limited by the desired performance of the array, since propagation time of the signal that must transverse the wordline is determined by the RC time constant . The bitline length

13328-423: The world's most valuable publicly traded company , with a market capitalization of over $ 3.3 trillion. Nvidia was founded on April 5, 1993, by Jensen Huang (CEO as of 2024 ), a Taiwanese-American electrical engineer who was previously the director of CoreWare at LSI Logic and a microprocessor designer at AMD ; Chris Malachowsky , an engineer who worked at Sun Microsystems ; and Curtis Priem , who

13447-403: The wrong technology, Nvidia was confronted with a painful dilemma: keep working on its inferior chip for the Dreamcast even though it was already too far behind the competition, or stop working and run out of money right away. Eventually, Sega's president at the time, Shoichiro Irimajiri , came to visit Huang in person to deliver the news that Sega was going with another graphics chip vendor for

13566-441: Was cheaper, and consumed less power, than magnetic-core memory. The patent describes the invention: "Each cell is formed, in one embodiment, using a single field-effect transistor and a single capacitor." MOS DRAM chips were commercialized in 1969 by Advanced Memory Systems, Inc of Sunnyvale, CA . This 1024 bit chip was sold to Honeywell , Raytheon , Wang Laboratories , and others. The same year, Honeywell asked Intel to make

13685-500: Was demonstrated in 2012. Dynamic random-access memory DRAM typically takes the form of an integrated circuit chip, which can consist of dozens to billions of DRAM memory cells. DRAM chips are widely used in digital electronics where low-cost and high-capacity computer memory is required. One of the largest applications for DRAM is the main memory (colloquially called the RAM) in modern computers and graphics cards (where

13804-431: Was generally described as "5-2-2-2" timing, as bursts of four reads within a page were common. When describing synchronous memory, timing is described by clock cycle counts separated by hyphens. These numbers represent t CL - t RCD - t RP - t RAS in multiples of the DRAM clock cycle time. Note that this is half of the data transfer rate when double data rate signaling is used. JEDEC standard PC3200 timing

13923-514: Was previously a senior staff engineer and graphics chip designer at IBM and Sun Microsystems. The three men agreed to start the company in a meeting at a Denny's roadside diner on Berryessa Road in East San Jose . At the time, Malachowsky and Priem were frustrated with Sun's management and were looking to leave, but Huang was on "firmer ground", in that he was already running his own division at LSI. The three co-founders discussed

14042-573: Was reported that Nvidia planned to open a new research center in Yerevan, Armenia . In May 2022, Nvidia opened Voyager, the second of the two giant buildings at its new headquarters complex to the west of the old one. Unlike its smaller and older sibling Endeavor, the triangle theming is used more "sparingly" in Voyager. In September 2022, Nvidia announced its next-generation automotive-grade chip, Drive Thor . In September 2022, Nvidia announced

14161-477: Was strongly motivated by economics, a major consideration for DRAM devices, especially commodity DRAMs. The minimization of DRAM cell area can produce a denser device and lower the cost per bit of storage. Starting in the mid-1980s, the capacitor was moved above or below the silicon substrate in order to meet these objectives. DRAM cells featuring capacitors above the substrate are referred to as stacked or folded plate capacitors. Those with capacitors buried beneath

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