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108-573: American Standard Companies Inc. was a manufacturer of heating, ventilation, and air conditioning (HVAC) systems, plumbing fixtures , and automotive parts. The company was formed in 1929 through the merger of the American Radiator Company and Standard Sanitary Manufacturing Company forming the American Radiator and Standard Sanitary Corporation . The name was simplified to American Standard in 1967. The company

216-534: A MOSFET (metal–oxide–semiconductor field-effect transistor) using the silicon-on-sapphire process at RCA Laboratories . Semiconductor device manufacturing has since spread from Texas and California in the 1960s to the rest of the world, including Asia , Europe , and the Middle East . Wafer size has grown over time, from 25 mm in 1960, to 50 mm in 1969, 100 mm in 1976, 125 mm in 1981, 150 mm in 1983 and 200 mm in 1992. In

324-481: A Competitive Industrial Performance (CIP) Index, which measures the competitive manufacturing ability of different nations. The CIP Index combines a nation's gross manufacturing output with other factors like high-tech capability and the nation's impact on the world economy. Germany topped the 2020 CIP Index, followed by China, South Korea , the United States, and Japan. In 2023, the manufacturing industry in

432-417: A layer of silicon dioxide over the silicon wafer, for which they observed surface passivation effects. By 1957 Frosch and Derick, using masking and predeposition, were able to manufacture silicon dioxide transistors; the first planar field effect transistors, in which drain and source were adjacent at the same surface. At Bell Labs, the importance of their discoveries was immediately realized. Memos describing

540-575: A result, they make only a reactive contribution. Emerging technologies have offered new growth methods in advanced manufacturing employment opportunities, for example in the Manufacturing Belt in the United States. Manufacturing provides important material support for national infrastructure and also for national defense . On the other hand, most manufacturing processes may involve significant social and environmental costs. The clean-up costs of hazardous waste , for example, may outweigh

648-543: A semiconductor device might not need all techniques. Equipment for carrying out these processes is made by a handful of companies . All equipment needs to be tested before a semiconductor fabrication plant is started. These processes are done after integrated circuit design . A semiconductor fab operates 24/7 and many fabs use large amounts of water, primarily for rinsing the chips. Additionally steps such as Wright etch may be carried out. When feature widths were far greater than about 10 micrometres , semiconductor purity

756-419: A semiconductor fabrication facility are required to wear cleanroom suits to protect the devices from contamination by humans. To increase yield, FOUPs and semiconductor capital equipment may have a mini environment with ISO class 1 level of dust, and FOUPs can have an even cleaner micro environment. FOUPs and SMIF pods isolate the wafers from the air in the cleanroom, increasing yield because they reduce

864-432: A simple die shrink of a currently produced chip design to reduce costs, improve performance, and increase transistor density (number of transistors per unit area) without the expense of a new design. Early semiconductor processes had arbitrary names for generations (viz., HMOS I/II/III/IV and CHMOS III/III-E/IV/V). Later each new generation process became known as a technology node or process node , designated by

972-411: A small part of the device such as a memory cell to store data. Thus F is used to measure the area taken up by these cells or sections. A specific semiconductor process has specific rules on the minimum size (width or CD/Critical Dimension) and spacing for features on each layer of the chip. Normally a new semiconductor process has smaller minimum sizes and tighter spacing. In some cases, this allows

1080-448: A stone tool, a " core " of hard stone with specific flaking properties (such as flint ) was struck with a hammerstone . This flaking produced sharp edges that could be used as tools, primarily in the form of choppers or scrapers . These tools greatly aided the early humans in their hunter-gatherer lifestyle to form other tools out of softer materials such as bone and wood. The Middle Paleolithic , approximately 300,000 years ago, saw

1188-472: A wafer box or a wafer carrying box. In semiconductor device fabrication, the various processing steps fall into four general categories: deposition, removal, patterning, and modification of electrical properties. Modification of electrical properties now also extends to the reduction of a material's dielectric constant in low-κ insulators via exposure to ultraviolet light in UV processing (UVP). Modification

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1296-408: A wafer will be processed by a particular machine in a processing step during manufacturing. Process variability is a challenge in semiconductor processing, in which wafers are not processed evenly or the quality or effectiveness of processes carried out on a wafer are not even across the wafer surface. Wafer processing is separated into FEOL and BEOL stages. FEOL processing refers to the formation of

1404-502: Is believed to have originated when the technology of pottery kiln allowed sufficiently high temperatures. The concentration of various elements such as arsenic increase with depth in copper ore deposits and smelting of these ores yields arsenical bronze , which can be sufficiently work-hardened to be suitable for manufacturing tools. Bronze is an alloy of copper with tin; the latter of which being found in relatively few deposits globally delayed true tin bronze becoming widespread. During

1512-484: Is conventionally defined by the widespread manufacturing of weapons and tools using iron and steel rather than bronze. Iron smelting is more difficult than tin and copper smelting because smelted iron requires hot-working and can be melted only in specially designed furnaces. The place and time for the discovery of iron smelting is not known, partly because of the difficulty of distinguishing metal extracted from nickel-containing ores from hot-worked meteoritic iron. During

1620-788: Is deposited. Once the epitaxial silicon is deposited, the crystal lattice becomes stretched somewhat, resulting in improved electronic mobility. Another method, called silicon on insulator technology involves the insertion of an insulating layer between the raw silicon wafer and the thin layer of subsequent silicon epitaxy. This method results in the creation of transistors with reduced parasitic effects . Semiconductor equipment may have several chambers which process wafers in processes such as deposition and etching. Many pieces of equipment handle wafers between these chambers in an internal nitrogen or vacuum environment to improve process control. Wet benches with tanks containing chemical solutions were historically used for cleaning and etching wafers. At

1728-403: Is frequently achieved by oxidation , which can be carried out to create semiconductor-insulator junctions, such as in the local oxidation of silicon ( LOCOS ) to fabricate metal oxide field effect transistors . Modern chips have up to eleven or more metal levels produced in over 300 or more sequenced processing steps. A recipe in semiconductor manufacturing is a list of conditions under which

1836-403: Is known as the linewidth. Patterning often refers to photolithography which allows a device design or pattern to be defined on the device during fabrication. F is used as a measurement of area for different parts of a semiconductor device, based on the feature size of a semiconductor manufacturing process. Many semiconductor devices are designed in sections called cells, and each cell represents

1944-611: Is likely derived from the Middle French manufacture ("process of making") which itself originates from the Classical Latin manū ("hand") and Middle French facture ("making"). Alternatively, the English word may have been independently formed from the earlier English manufacture ("made by human hands") and fracture . Its earliest usage in the English language was recorded in the mid-16th century to refer to

2052-407: Is often based on tungsten and has upper and lower layers: the lower layer connects the junctions of the transistors, and an upper layer which is a tungsten plug that connects the transistors to the interconnect. Intel at the 10nm node introduced contact-over-active-gate (COAG) which, instead of placing the contact for connecting the transistor close to the gate of the transistor, places it directly over

2160-446: Is performed in highly specialized semiconductor fabrication plants , also called foundries or "fabs", with the central part being the " clean room ". In more advanced semiconductor devices, such as modern 14 / 10 / 7 nm nodes, fabrication can take up to 15 weeks, with 11–13 weeks being the industry average. Production in advanced fabrication facilities is completely automated, with automated material handling systems taking care of

2268-513: Is the essence of the secondary sector of the economy . The term may refer to a range of human activity , from handicraft to high-tech , but it is most commonly applied to industrial design , in which raw materials from the primary sector are transformed into finished goods on a large scale. Such goods may be sold to other manufacturers for the production of other more complex products (such as aircraft, household appliances , furniture, sports equipment or automobiles ), or distributed via

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2376-563: The American Radiator Company (founded 1892) merged with the Standard Sanitary Manufacturing Company (founded 1875) to form the American Radiator and Standard Sanitary Corporation. The plumbing division, Standard Sanitary, would continue to sell their products under the "Standard" label until 1967, when the company changed its name to American Standard Corporation. The American Standard label

2484-499: The Bronze Age , bronze was a major improvement over stone as a material for making tools, both because of its mechanical properties like strength and ductility and because it could be cast in molds to make intricately shaped objects. Bronze significantly advanced shipbuilding technology with better tools and bronze nails, which replaced the old method of attaching boards of the hull with cord woven through drilled holes. The Iron Age

2592-586: The Czochralski process . These ingots are then sliced into wafers about 0.75 mm thick and polished to obtain a very regular and flat surface. During the production process wafers are often grouped into lots, which are represented by a FOUP, SMIF or a wafer cassette, which are wafer carriers. FOUPs and SMIFs can be transported in the fab between machines and equipment with an automated OHT (Overhead Hoist Transport) AMHS (Automated Material Handling System). Besides SMIFs and FOUPs, wafer cassettes can be placed in

2700-514: The High-κ dielectric , creating dummy gates, manufacturing sources and drains by ion deposition and dopant annealing, depositing an "interlevel dielectric (ILD)" and then polishing, and removing the dummy gates to replace them with a metal whose workfunction depended on whether the transistor was NMOS or PMOS, thus creating the metal gate. A third process, full silicidation (FUSI) was not pursued due to manufacturing problems. Gate-first became dominant at

2808-510: The tertiary industry to end users and consumers (usually through wholesalers, who in turn sell to retailers, who then sell them to individual customers). Manufacturing engineering is the field of engineering that designs and optimizes the manufacturing process , or the steps through which raw materials are transformed into a final product . The manufacturing process begins with the product design , and materials specification . These materials are then modified through manufacturing to become

2916-429: The transistors directly in the silicon . The raw wafer is engineered by the growth of an ultrapure, virtually defect-free silicon layer through epitaxy . In the most advanced logic devices , prior to the silicon epitaxy step, tricks are performed to improve the performance of the transistors to be built. One method involves introducing a straining step wherein a silicon variant such as silicon-germanium (SiGe)

3024-422: The 1830s. This transition included going from hand production methods to machines, new chemical manufacturing and iron production processes, the increasing use of steam power and water power , the development of machine tools and the rise of the mechanized factory system . The Industrial Revolution also led to an unprecedented rise in the rate of population growth. Textiles were the dominant industry of

3132-478: The 1890s after the introduction of the practical DC motor and the AC motor , was fastest between 1900 and 1930. This was aided by the establishment of electric utilities with central stations and the lowering of electricity prices from 1914 to 1917. Electric motors allowed more flexibility in manufacturing and required less maintenance than line shafts and belts. Many factories witnessed a 30% increase in output owing to

3240-437: The 1970s. High-k dielectric such as hafnium oxide (HfO 2 ) replaced silicon oxynitride (SiON), in order to prevent large amounts of leakage current in the transistor while allowing for continued scaling or shrinking of the transistors. However HfO 2 is not compatible with polysilicon gates which requires the use of a metal gate. Two approaches were used in production: gate-first and gate-last. Gate-first consists of depositing

3348-414: The 22nm node, because planar transistors which only have one surface acting as a channel, started to suffer from short channel effects. A startup called SuVolta created a technology called Deeply Depleted Channel (DDC) to compete with FinFET transistors, which uses planar transistors at the 65 nm node which are very lightly doped. By 2018, a number of transistor architectures had been proposed for

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3456-601: The 22nm/20nm node. HKMG has been extended from planar transistors for use in FinFET and nanosheet transistors. Hafnium silicon oxynitride can also be used instead of Hafnium oxide. Since the 16nm/14nm node, Atomic layer etching (ALE) is increasingly used for etching as it offers higher precision than other etching methods. In production, plasma ALE is commonly used, which removes materials unidirectionally, creating structures with vertical walls. Thermal ALE can also be used to remove materials isotropically, in all directions at

3564-463: The 350nm and 250nm nodes (0.35 and 0.25 micron nodes), at the same time chemical mechanical polishing began to be employed. At the time, 2 metal layers for interconnect, also called metallization was state-of-the-art. Since the 22nm node, some manufacturers have added a new process called middle-of-line (MOL) which connects the transistors to the rest of the interconnect made in the BEoL process. The MOL

3672-536: The 8th century. Papermaking technology was spread to Europe by the Umayyad conquest of Hispania . A paper mill was established in Sicily in the 12th century. In Europe the fiber to make pulp for making paper was obtained from linen and cotton rags. Lynn Townsend White Jr. credited the spinning wheel with increasing the supply of rags, which led to cheap paper, which was a factor in the development of printing. Due to

3780-537: The 90nm node, transistor channels made with strain engineering were introduced to improve drive current in PMOS transistors by introducing regions with Silicon-Germanium in the transistor. The same was done in NMOS transistors at the 20nm node. In 2007, HKMG (high-k/metal gate) transistors were introduced by Intel at the 45nm node, which replaced polysilicon gates which in turn replaced metal gate (aluminum gate) technology in

3888-638: The CEO of General Electric , called for the United States to increase its manufacturing base employment to 20% of the workforce, commenting that the U.S. has outsourced too much in some areas and can no longer rely on the financial sector and consumer spending to drive demand. Further, while U.S. manufacturing performs well compared to the rest of the U.S. economy, research shows that it performs poorly compared to manufacturing in other high-wage countries. A total of 3.2 million – one in six U.S. manufacturing jobs – have disappeared between 2000 and 2007. In

3996-511: The EFEM which helps reduce the amount of humidity that enters the FOUP and improves yield. Companies that manufacture machines used in the industrial semiconductor fabrication process include ASML , Applied Materials , Tokyo Electron and Lam Research . Feature size is determined by the width of the smallest lines that can be patterned in a semiconductor fabrication process, this measurement

4104-453: The FOUPs into the machine. Additionally many machines also handle wafers in clean nitrogen or vacuum environments to reduce contamination and improve process control. Fabrication plants need large amounts of liquid nitrogen to maintain the atmosphere inside production machinery and FOUPs, which are constantly purged with nitrogen. There can also be an air curtain or a mesh between the FOUP and

4212-559: The Industrial Revolution in terms of employment, value of output and capital invested. The textile industry was also the first to use modern production methods. Rapid industrialization first began in Britain, starting with mechanized spinning in the 1780s, with high rates of growth in steam power and iron production occurring after 1800. Mechanized textile production spread from Great Britain to continental Europe and

4320-621: The Mediterranean basin. Early construction techniques used by the Ancient Egyptians made use of bricks composed mainly of clay, sand, silt, and other minerals. The Middle Ages witnessed new inventions, innovations in the ways of managing traditional means of production, and economic growth. Papermaking , a 2nd-century Chinese technology, was carried to the Middle East when a group of Chinese papermakers were captured in

4428-497: The Precision 5000. Until the 1980s, physical vapor deposition was the primary technique used for depositing materials onto wafers, until the advent of chemical vapor deposition. Equipment with diffusion pumps was replaced with those using turbomolecular pumps as the latter do not use oil which often contaminated wafers during processing in vacuum. 200 mm diameter wafers were first used in 1990 for making chips. These became

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4536-511: The Producer, a cluster tool that had chambers grouped in pairs for processing wafers, which shared common vacuum and supply lines but were otherwise isolated, which was revolutionary at the time as it offered higher productivity than other cluster tools without sacrificing quality, due to the isolated chamber design. The semiconductor industry is a global business today. The leading semiconductor manufacturers typically have facilities all over

4644-700: The UK, EEF the manufacturers organisation has led calls for the UK economy to be rebalanced to rely less on financial services and has actively promoted the manufacturing agenda. According to the United Nations Industrial Development Organization (UNIDO), China is the top manufacturer worldwide by 2023 output, producing 28.7% of the total global manufacturing output, followed by the United States of America , Germany , Japan , and India . UNIDO also publishes

4752-509: The United Kingdom-based plumbing fixture companies Armitage Shanks and Ceramica Dolomite of Italy from Blue Circle Industries for $ 430 million. On February 1, 2007 the company announced it would break up its three divisions: Manufacturing Manufacturing is the creation or production of goods with the help of equipment, labor , machines , tools , and chemical or biological processing or formulation . It

4860-568: The United States accounted for 10.70% of the total national output, employing 8.41% of the workforce. The total value of manufacturing output reached $ 2.5 trillion. In 2023, Germany's manufacturing output reached $ 844.93 billion, marking a 12.25% increase from 2022. The sector employed approximately 5.5 million people, accounting for around 20.8% of the workforce. These are the top 50 countries by total value of manufacturing output in U.S. dollars for its noted year according to World Bank : Fabrication (semiconductor) The fabrication process

4968-527: The United States in the early 19th century, with important centres of textiles, iron and coal emerging in Belgium and the United States and later textiles in France. An economic recession occurred from the late 1830s to the early 1840s when the adoption of the Industrial Revolution's early innovations, such as mechanized spinning and weaving, slowed down and their markets matured. Innovations developed late in

5076-530: The adoption of FOUPs, but many products that are not advanced are still produced in 200 mm wafers such as analog ICs, RF chips, power ICs, BCDMOS and MEMS devices. Some processes such as cleaning, ion implantation, etching, annealing and oxidation started to adopt single wafer processing instead of batch wafer processing in order to improve the reproducibility of results. A similar trend existed in MEMS manufacturing. In 1998, Applied Materials introduced

5184-400: The air in the cleanroom; semiconductor capital equipment may also have their own FFUs to clean air in the equipment's EFEM which allows the equipment to receive wafers in FOUPs. The FFUs, combined with raised floors with grills, help ensure a laminar air flow, to ensure that particles are immediately brought down to the floor and do not stay suspended in the air due to turbulence. The workers in

5292-544: The average utilization of semiconductor devices increased, durability became an issue and manufacturers started to design their devices to ensure they last for enough time, and this depends on the market the device is designed for. This especially became a problem at the 10 nm node. Silicon on insulator (SOI) technology has been used in AMD 's 130 nm, 90 nm, 65 nm, 45 nm and 32 nm single, dual, quad, six and eight core processors made since 2001. During

5400-402: The basis of CMOS technology today. An improved type of MOSFET technology, CMOS , was developed by Chih-Tang Sah and Frank Wanlass at Fairchild Semiconductor in 1963. CMOS was commercialised by RCA in the late 1960s. RCA commercially used CMOS for its 4000-series integrated circuits in 1968, starting with a 20   μm process before gradually scaling to a 10 μm process over

5508-445: The benefits of a product that creates it. Hazardous materials may expose workers to health risks. These costs are now well known and there is effort to address them by improving efficiency , reducing waste, using industrial symbiosis , and eliminating harmful chemicals. The negative costs of manufacturing can also be addressed legally. Developed countries regulate manufacturing activity with labor laws and environmental laws. Across

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5616-400: The carrier, processed and returned to the carrier, so acid-resistant carriers were developed to eliminate this time consuming process, so the entire cassette with wafers was dipped into wet etching and wet cleaning tanks. When wafer sizes increased to 100 mm, the entire cassette would often not be dipped as uniformly, and the quality of the results across the wafer became hard to control. By

5724-520: The casting of cannon, the blast furnace came into widespread use in France in the mid 15th century. The blast furnace had been used in China since the 4th century BC. The stocking frame , which was invented in 1598, increased a knitter's number of knots per minute from 100 to 1000. The Industrial Revolution was the transition to new manufacturing processes in Europe and the United States from 1760 to

5832-476: The company's financial abilities. From 2020 to 2022, there was a global chip shortage . During this shortage caused by the COVID-19 pandemic, many semiconductor manufacturers banned employees from leaving company grounds. Many countries granted subsidies to semiconductor companies for building new fabrication plants or fabs. Many companies were affected by counterfeit chips. Semiconductors have become vital to

5940-568: The concept of "focus", with an implication that a business cannot perform at the highest level along all five dimensions and must therefore select one or two competitive priorities. This view led to the theory of "trade offs" in manufacturing strategy. Similarly, Elizabeth Haas wrote in 1987 about the delivery of value in manufacturing for customers in terms of "lower prices, greater service responsiveness or higher quality". The theory of "trade offs" has subsequently being debated and questioned, but Skinner wrote in 1992 that at that time "enthusiasm for

6048-451: The concepts of 'manufacturing strategy' [had] been higher", noting that in academic papers , executive courses and case studies , levels of interest were "bursting out all over". Manufacturing writer Terry Hill has commented that manufacturing is often seen as a less "strategic" business activity than functions such as marketing and finance , and that manufacturing managers have "come late" to business strategy-making discussions, where, as

6156-502: The depth of focus of available lithography, and thus interfering with the ability to pattern. CMP ( chemical-mechanical planarization ) is the primary processing method to achieve such planarization, although dry etch back is still sometimes employed when the number of interconnect levels is no more than three. Copper interconnects use an electrically conductive barrier layer to prevent the copper from diffusing into ("poisoning") its surroundings, often made of tantalum nitride. In 1997, IBM

6264-424: The desired complementary electrical properties. In dynamic random-access memory (DRAM) devices, storage capacitors are also fabricated at this time, typically stacked above the access transistor (the now defunct DRAM manufacturer Qimonda implemented these capacitors with trenches etched deep into the silicon surface). Once the various semiconductor devices have been created , they must be interconnected to form

6372-746: The desired electrical circuits. This occurs in a series of wafer processing steps collectively referred to as BEOL (not to be confused with back end of chip fabrication, which refers to the packaging and testing stages). BEOL processing involves creating metal interconnecting wires that are isolated by dielectric layers. The insulating material has traditionally been a form of SiO 2 or a silicate glass , but recently new low dielectric constant materials, also called low-κ dielectrics, are being used (such as silicon oxycarbide), typically providing dielectric constants around 2.7 (compared to 3.82 for SiO 2 ), although materials with constants as low as 2.2 are being offered to chipmakers. BEoL has been used since 1995 at

6480-399: The desired product. Contemporary manufacturing encompasses all intermediary stages involved in producing and integrating components of a product. Some industries, such as semiconductor and steel manufacturers, use the term fabrication instead. The manufacturing sector is closely connected with the engineering and industrial design industries. The Modern English word manufacture

6588-411: The entire wafer is scrapped to avoid the costs of further processing. Virtual metrology has been used to predict wafer properties based on statistical methods without performing the physical measurement itself. Once the front-end process has been completed, the semiconductor devices or chips are subjected to a variety of electrical tests to determine if they function properly. The percent of devices on

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6696-413: The era of 2 inch wafers, these were handled manually using tweezers and held manually for the time required for a given process. Tweezers were replaced by vacuum wands as they generate fewer particles which can contaminate the wafers. Wafer carriers or cassettes, which can hold several wafers at once, were developed to carry several wafers between process steps, but wafers had to be individually removed from

6804-605: The eventual replacement of FinFET , most of which were based on the concept of GAAFET : horizontal and vertical nanowires, horizontal nanosheet transistors (Samsung MBCFET, Intel Nanoribbon), vertical FET (VFET) and other vertical transistors, complementary FET (CFET), stacked FET, vertical TFETs, FinFETs with III-V semiconductor materials (III-V FinFET), several kinds of horizontal gate-all-around transistors such as nano-ring, hexagonal wire, square wire, and round wire gate-all-around transistors and negative-capacitance FET (NC-FET) which uses drastically different materials. FD-SOI

6912-437: The first automatic reticle and photomask inspection tool. In 1985, KLA developed an automatic inspection tool for silicon wafers, which replaced manual microscope inspection. In 1985, SGS (now STmicroelectronics ) invented BCD, also called BCDMOS , a semiconductor manufacturing process using bipolar , CMOS and DMOS devices. Applied Materials developed the first practical multi chamber, or cluster wafer processing tool,

7020-438: The gate of the transistor to improve transistor density. Historically, the metal wires have been composed of aluminum . In this approach to wiring (often called subtractive aluminum ), blanket films of aluminum are deposited first, patterned, and then etched, leaving isolated wires. Dielectric material is then deposited over the exposed wires. The various metal layers are interconnected by etching holes (called " vias") in

7128-481: The globe, manufacturers can be subject to regulations and pollution taxes to offset the environmental costs of manufacturing activities . Labor unions and craft guilds have played a historic role in the negotiation of worker rights and wages. Environment laws and labor protections that are available in developed nations may not be available in the third world . Tort law and product liability impose additional costs on manufacturing. These are significant dynamics in

7236-613: The growth of the ancient civilizations, many ancient technologies resulted from advances in manufacturing. Several of the six classic simple machines were invented in Mesopotamia. Mesopotamians have been credited with the invention of the wheel. The wheel and axle mechanism first appeared with the potter's wheel , invented in Mesopotamia (modern Iraq) during the 5th millennium BC. Egyptian paper made from papyrus , as well as pottery , were mass-produced and exported throughout

7344-403: The high-k dielectric and then the gate metal such as Tantalum nitride whose workfunction depends on whether the transistor is NMOS or PMOS, polysilicon deposition, gate line patterning, source and drain ion implantation, dopant anneal, and silicidation of the polysilicon and the source and drain. In DRAM memories this technology was first adopted in 2015. Gate-last consisted of first depositing

7452-602: The increasing shift to electric motors. Electrification enabled modern mass production, and the biggest impact of early mass production was in the manufacturing of everyday items, such as at the Ball Brothers Glass Manufacturing Company , which electrified its mason jar plant in Muncie, Indiana , U.S. around 1900. The new automated process used glass blowing machines to replace 210 craftsman glass blowers and helpers. A small electric truck

7560-407: The industry in the United States and other countries. According to a "traditional" view of manufacturing strategy, there are five key dimensions along which the performance of manufacturing can be assessed: cost, quality , dependability , flexibility and innovation . In regard to manufacturing performance, Wickham Skinner , who has been called "the father of manufacturing strategy ", adopted

7668-412: The insulating material and then depositing tungsten in them with a CVD technique using tungsten hexafluoride ; this approach can still be (and often is) used in the fabrication of many memory chips such as dynamic random-access memory (DRAM), because the number of interconnect levels can be small (no more than four). The aluminum was sometimes alloyed with copper for preventing recrystallization. Gold

7776-423: The interconnect (from silicon dioxides to newer low-κ insulators). This performance enhancement also comes at a reduced cost via damascene processing, which eliminates processing steps. As the number of interconnect levels increases, planarization of the previous layers is required to ensure a flat surface prior to subsequent lithography. Without it, the levels would become increasingly crooked, extending outside

7884-802: The introduction of the prepared-core technique , where multiple blades could be rapidly formed from a single core stone. Pressure flaking , in which a wood, bone, or antler punch could be used to shape a stone very finely was developed during the Upper Paleolithic , beginning approximately 40,000 years ago. During the Neolithic period, polished stone tools were manufactured from a variety of hard rocks such as flint , jade , jadeite , and greenstone . The polished axes were used alongside other stone tools including projectiles , knives, and scrapers, as well as tools manufactured from organic materials such as wood, bone, and antler. Copper smelting

7992-405: The large-scale manufacture of machine tools and the use of increasingly advanced machinery in steam-powered factories. Building on improvements in vacuum pumps and materials research, incandescent light bulbs became practical for general use in the late 1870s. This invention had a profound effect on the workplace because factories could now have second and third shift workers. Shoe production

8100-640: The making of products by hand. Human ancestors manufactured objects using stone and other tools long before the emergence of Homo sapiens about 200,000 years ago. The earliest methods of stone tool making, known as the Oldowan " industry ", date back to at least 2.3 million years ago, with the earliest direct evidence of tool usage found in Ethiopia within the Great Rift Valley , dating back to 2.5 million years ago. To manufacture

8208-727: The market towards end customers . This relative cost reduction towards the market, is how manufacturing firms secure their profit margins . Manufacturing has unique health and safety challenges and has been recognized by the National Institute for Occupational Safety and Health (NIOSH) as a priority industry sector in the National Occupational Research Agenda (NORA) to identify and provide intervention strategies regarding occupational health and safety issues. Surveys and analyses of trends and issues in manufacturing and investment around

8316-530: The name of its 10 nm process to position it as a 7 nm process. As transistors become smaller, new effects start to influence design decisions such as self-heating of the transistors, and other effects such as electromigration have become more evident since the 16nm node. In 2011, Intel demonstrated Fin field-effect transistors (FinFETs), where the gate surrounds the channel on three sides, allowing for increased energy efficiency and lower gate delay—and thus greater performance—over planar transistors at

8424-591: The next several years. Many early semiconductor device manufacturers developed and built their own equipment such as ion implanters. In 1963, Harold M. Manasevit was the first to document epitaxial growth of silicon on sapphire while working at the Autonetics division of North American Aviation (now Boeing ). In 1964, he published his findings with colleague William Simpson in the Journal of Applied Physics . In 1965, C.W. Mueller and P.H. Robinson fabricated

8532-443: The node with the highest transistor density is TSMC's 5   nanometer N5 node, with a density of 171.3   million transistors per square millimeter. In 2019, Samsung and TSMC announced plans to produce 3 nanometer nodes. GlobalFoundries has decided to stop the development of new nodes beyond 12 nanometers in order to save resources, as it has determined that setting up a new fab to handle sub-12 nm orders would be beyond

8640-474: The number of defects caused by dust particles. Also, fabs have as few people as possible in the cleanroom to make maintaining the cleanroom environment easier, since people, even when wearing cleanroom suits, shed large amounts of particles, especially when walking. A typical wafer is made out of extremely pure silicon that is grown into mono-crystalline cylindrical ingots ( boules ) up to 300 mm (slightly less than 12 inches) in diameter using

8748-423: The ongoing process, occurring over the last few decades, of manufacture-based industries relocating operations to "developing-world" economies where the costs of production are significantly lower than in "developed-world" economies. From a financial perspective, the goal of the manufacturing industry is mainly to achieve cost benefits per unit produced, which in turn leads to cost reductions in product prices for

8856-627: The period, such as the increasing adoption of locomotives, steamboats and steamships, hot blast iron smelting and new technologies, such as the electrical telegraph , were widely introduced in the 1840s and 1850s, were not powerful enough to drive high rates of growth. Rapid economic growth began to occur after 1870, springing from a new group of innovations in what has been called the Second Industrial Revolution . These innovations included new steel making processes , mass-production , assembly lines , electrical grid systems,

8964-615: The process' minimum feature size in nanometers (or historically micrometers ) of the process's transistor gate length, such as the " 90 nm process ". However, this has not been the case since 1994, and the number of nanometers used to name process nodes (see the International Technology Roadmap for Semiconductors ) has become more of a marketing term that has no standardized relation with functional feature sizes or with transistor density (number of transistors per unit area). Initially transistor gate length

9072-527: The production flow and some had special carriages for rolling heavy items into machining positions. Production of the Ford Model T used 32,000 machine tools. Lean manufacturing , also known as just-in-time manufacturing, was developed in Japan in the 1930s. It is a production method aimed primarily at reducing times within the production system as well as response times from suppliers and to customers. It

9180-509: The results of their work circulated around Bell Labs before being formally published in 1957. At Shockley Semiconductor , Shockley had circulated the preprint of their article in December 1956 to all his senior staff, including Jean Hoerni , who would later invent the planar process in 1959 while at Fairchild Semiconductor . In 1948, Bardeen patented an insulated-gate transistor (IGFET) with an inversion layer, Bardeen's concept, forms

9288-469: The same time but without the capability to create vertical walls. Plasma ALE was initially adopted for etching contacts in transistors, and since the 7nm node it is also used to create transistor structures by etching them. Front-end surface engineering is followed by growth of the gate dielectric (traditionally silicon dioxide ), patterning of the gate, patterning of the source and drain regions, and subsequent implantation or diffusion of dopants to obtain

9396-455: The standard until the introduction of 300 mm diameter wafers in 2000. Bridge tools were used in the transition from 150 mm wafers to 200 mm wafers and in the transition from 200 mm to 300 mm wafers. The semiconductor industry has adopted larger wafers to cope with the increased demand for chips as larger wafers provide more surface area per wafer. Over time, the industry shifted to 300 mm wafers which brought along

9504-437: The then-well-known technique of chain or sequential production. Ford also bought or designed and built special purpose machine tools and fixtures such as multiple spindle drill presses that could drill every hole on one side of an engine block in one operation and a multiple head milling machine that could simultaneously machine 15 engine blocks held on a single fixture. All of these machine tools were arranged systematically in

9612-505: The time 150 mm wafers arrived, the cassettes were not dipped and were only used as wafer carriers and holders to store wafers, and robotics became prevalent for handling wafers. With 200 mm wafers manual handling of wafer cassettes becomes risky as they are heavier. In the 1970s, several companies migrated their semiconductor manufacturing technology from bipolar to CMOS technology. Semiconductor manufacturing equipment has been considered costly since 1978. In 1984, KLA developed

9720-611: The transition from 200 mm to 300 mm wafers in 2001, many bridge tools were used which could process both 200 mm and 300 mm wafers. At the time, 18 companies could manufacture chips in the leading edge 130nm process. In 2006, 450 mm wafers were expected to be adopted in 2012, and 675 mm wafers were expected to be used by 2021. Since 2009, "node" has become a commercial name for marketing purposes that indicates new generations of process technologies, without any relation to gate length, metal pitch or gate pitch. For example, GlobalFoundries ' 7 nm process

9828-559: The transport of wafers from machine to machine. A wafer often has several integrated circuits which are called dies as they are pieces diced from a single wafer. Individual dies are separated from a finished wafer in a process called die singulation , also called wafer dicing. The dies can then undergo further assembly and packaging. Within fabrication plants, the wafers are transported inside special sealed plastic boxes called FOUPs . FOUPs in many fabs contain an internal nitrogen atmosphere which helps prevent copper from oxidizing on

9936-504: The two types of transistors separately and then stacked them. This is a list of processing techniques that are employed numerous times throughout the construction of a modern electronic device; this list does not necessarily imply a specific order, nor that all techniques are taken during manufacture as, in practice the order and which techniques are applied, are often specific to process offerings by foundries, or specific to an integrated device manufacturer (IDM) for their own products, and

10044-478: The various processing steps. For example, thin film metrology based on ellipsometry or reflectometry is used to tightly control the thickness of gate oxide, as well as the thickness, refractive index, and extinction coefficient of photoresist and other coatings. Wafer metrology equipment/tools, or wafer inspection tools are used to verify that the wafers haven't been damaged by previous processing steps up until testing; if too many dies on one wafer have failed,

10152-442: The wafers. Copper is used in modern semiconductors for wiring. The insides of the processing equipment and FOUPs is kept cleaner than the surrounding air in the cleanroom. This internal atmosphere is known as a mini-environment and helps improve yield which is the amount of working devices on a wafer. This mini environment is within an EFEM (equipment front end module) which allows a machine to receive FOUPs, and introduces wafers from

10260-422: The world economy and the national security of some countries. The US has asked TSMC to not produce semiconductors for Huawei, a Chinese company. CFET transistors were explored, which stacks NMOS and PMOS transistors on top of each other. Two approaches were evaluated for constructing these transistors: a monolithic approach which built both types of transistors in one process, and a sequential approach which built

10368-431: The world focus on such things as: In addition to general overviews, researchers have examined the features and factors affecting particular key aspects of manufacturing development. They have compared production and investment in a range of Western and non-Western countries and presented case studies of growth and performance in important individual industries and market-economic sectors. On June 26, 2009, Jeff Immelt ,

10476-685: The world. Samsung Electronics , the world's largest manufacturer of semiconductors, has facilities in South Korea and the US. Intel , the second-largest manufacturer, has facilities in Europe and Asia as well as the US. TSMC , the world's largest pure play foundry , has facilities in Taiwan, China, Singapore, and the US. Qualcomm and Broadcom are among the biggest fabless semiconductor companies, outsourcing their production to companies like TSMC. They also have facilities spread in different countries. As

10584-429: Was also used in interconnects in early chips. More recently, as the number of interconnect levels for logic has substantially increased due to the large number of transistors that are now interconnected in a modern microprocessor , the timing delay in the wiring has become so significant as to prompt a change in wiring material (from aluminum to copper interconnect layer) alongside a change in dielectric material in

10692-492: Was broken up in 2007 with the spin off of the automotive parts business as WABCO Vehicle Control Systems and sale of the plumbing fixtures business as American Standard Brands . The remaining business was renamed Trane , which continues to build HVAC systems under the American Standard name. Trane was acquired by Ingersoll Rand in 2008, and the parent company has since been renamed Trane Technologies . In 1929,

10800-857: Was introduced in Australia in the 1950s by the British Motor Corporation (Australia) at its Victoria Park plant in Sydney, from where the idea later migrated to Toyota. News spread to western countries from Japan in 1977 in two English-language articles: one referred to the methodology as the "Ohno system", after Taiichi Ohno , who was instrumental in its development within Toyota. The other article, by Toyota authors in an international journal, provided additional details. Finally, those and other publicity were translated into implementations, beginning in 1980 and then quickly multiplying throughout

10908-481: Was mechanized during the mid 19th century. Mass production of sewing machines and agricultural machinery such as reapers occurred in the mid to late 19th century. The mass production of bicycles started in the 1880s. Steam-powered factories became widespread, although the conversion from water power to steam occurred in England earlier than in the U.S. Electrification of factories, which had begun gradually in

11016-513: Was not as big of an issue as it is today in device manufacturing. In the 1960s, workers could work on semiconductor devices in street clothing. As devices become more integrated, cleanrooms must become even cleaner. Today, fabrication plants are pressurized with filtered air to remove even the smallest particles, which could come to rest on the wafers and contribute to defects. The ceilings of semiconductor cleanrooms have fan filter units (FFUs) at regular intervals to constantly replace and filter

11124-483: Was now used to handle 150 dozen bottles at a time whereas previously used hand trucks could only carry 6 dozen bottles at a time. Electric mixers replaced men with shovels handling sand and other ingredients that were fed into the glass furnace. An electric overhead crane replaced 36 day laborers for moving heavy loads across the factory. Mass production was popularized in the late 1910s and 1920s by Henry Ford 's Ford Motor Company , which introduced electric motors to

11232-466: Was seen as a potential low cost alternative to FinFETs. As of 2019, 14 nanometer and 10 nanometer chips are in mass production by Intel, UMC , TSMC, Samsung, Micron , SK Hynix , Toshiba Memory and GlobalFoundries, with 7 nanometer process chips in mass production by TSMC and Samsung, although their 7 nanometer node definition is similar to Intel's 10 nanometer process. The 5 nanometer process began being produced by Samsung in 2018. As of 2019,

11340-475: Was similar to Intel's 10 nm process , thus the conventional notion of a process node has become blurred. Additionally, TSMC and Samsung's 10 nm processes are only slightly denser than Intel's 14 nm in transistor density. They are actually much closer to Intel's 14 nm process than they are to Intel's 10 nm process (e.g. Samsung's 10 nm processes' fin pitch is the exact same as that of Intel's 14 nm process: 42 nm). Intel has changed

11448-666: Was smaller than that suggested by the process node name (e.g. 350 nm node); however this trend reversed in 2009. Feature sizes can have no connection to the nanometers (nm) used in marketing. For example, Intel's former 10 nm process actually has features (the tips of FinFET fins) with a width of 7 nm, so the Intel 10 nm process is similar in transistor density to TSMC 's 7 nm process . As another example, GlobalFoundries' 12 and 14 nm processes have similar feature sizes. In 1955, Carl Frosch and Lincoln Derick, working at Bell Telephone Laboratories , accidentally grew

11556-413: Was the first to adopt copper interconnects. In 2014, Applied Materials proposed the use of cobalt in interconnects at the 22nm node, used for encapsulating copper interconnects in cobalt to prevent electromigration, replacing tantalum nitride since it needs to be thicker than cobalt in this application. The highly serialized nature of wafer processing has increased the demand for metrology in between

11664-591: Was used for both divisions from that year on. In 1929, American Standard bought the Kewanee Toilet Boiler Company, which it kept until the early 1970s. In 1968, the group purchased earthmoving and mining product range of the Westinghouse Air Brake Company (WABCO). It divested itself of these assets in 1984. In 1984, the group acquired HVAC manufacturer Trane . In 1999, American Standard purchased control of

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