Double Data Rate 4 Synchronous Dynamic Random-Access Memory ( DDR4 SDRAM ) is a type of synchronous dynamic random-access memory with a high bandwidth (" double data rate ") interface.
150-451: Released to the market in 2014, it is a variant of dynamic random-access memory (DRAM), some of which have been in use since the early 1970s, and a higher-speed successor to the DDR2 and DDR3 technologies. DDR4 is not compatible with any earlier type of random-access memory (RAM) due to different signaling voltage and physical interface, besides other factors. DDR4 SDRAM was released to
300-599: A 47% increase in the price-per-bit in 2017, the largest jump in 30 years since the 45% jump in 1988, while in recent years the price has been going down. In 2018, a "key characteristic of the DRAM market is that there are currently only three major suppliers — Micron Technology , SK Hynix and Samsung Electronics " that are "keeping a pretty tight rein on their capacity". There is also Kioxia (previously Toshiba Memory Corporation after 2017 spin-off) which doesn't manufacture DRAM. Other manufacturers make and sell DIMMs (but not
450-434: A 600 million won decline from the 14 trillion won in 2022. The said drop can be attributed to the weak demand after COVID and a slowing global economy. Despite this decision, the company's shares increased by more than 4%. Samsung has been the top two applicant for PCT filled patents in 2022 and 2023 worldwide. Samsung has a powerful influence on South Korea's economic development, politics, media and culture and has been
600-755: A KRW-USD exchange rate of 1,084.5 KRW per USD, the spot rate as of 19 August 2011. These amounts do not include the revenues from Samsung's subsidiaries based outside South Korea. Samsung Electronics is a multinational electronics and information technology company headquartered in Suwon and the flagship company of the Samsung Group. Its products include air conditioners , computers , digital television sets , active-matrix organic light-emitting diodes (AMOLEDs), mobile phones , display monitors , computer printers , refrigerators , semiconductors and telecommunications networking equipment. It
750-451: A SO-DIMM package named UniDIMM , which can be populated with either DDR3 or DDR4 chips. At the same time, the integrated memory controller (IMC) of Skylake CPUs is announced to be capable of working with either type of memory. The purpose of UniDIMMs is to help in the market transition from DDR3 to DDR4, where pricing and availability may make it undesirable to switch the RAM type. UniDIMMs have
900-504: A bipolar dynamic RAM for its electronic calculator Toscal BC-1411. In 1966, Tomohisa Yoshimaru and Hiroshi Komikawa from Toshiba applied for a Japanese patent of a memory circuit composed of several transistors and a capacitor, in 1967 they applied for a patent in the US. The earliest forms of DRAM mentioned above used bipolar transistors . While it offered improved performance over magnetic-core memory , bipolar DRAM could not compete with
1050-507: A bus that is 8 bytes (64 data bits) wide, module peak transfer rate is calculated by taking transfers per second and multiplying by eight. At the 2016 Intel Developer Forum , the future of DDR5 SDRAM was discussed. The specifications were finalized at the end of 2016 – but no modules will be available before 2020. Other memory technologies – namely HBM in version 3 and 4 – aiming to replace DDR4 have also been proposed. In 2011, JEDEC introduced
1200-474: A capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites
1350-618: A capacitor are required per bit, compared to four or six transistors in SRAM. This allows DRAM to reach very high densities with a simultaneous reduction in cost per bit. Refreshing the data consumes power, causing a variety of techniques to be used to manage the overall power consumption. For this reason, DRAM usually needs to operate with a memory controller ; the memory controller needs to know DRAM parameters, especially memory timings , to initialize DRAMs, which may be different depending on different DRAM manufacturers and part numbers. DRAM had
1500-466: A cost advantage that grew with every jump in memory size. The MK4096 proved to be a very robust design for customer applications. At the 16 Kbit density, the cost advantage increased; the 16 Kbit Mostek MK4116 DRAM, introduced in 1976, achieved greater than 75% worldwide DRAM market share. However, as density increased to 64 Kbit in the early 1980s, Mostek and other US manufacturers were overtaken by Japanese DRAM manufacturers, which dominated
1650-472: A debate, "Samsung has the government in its hands. Samsung manages the legal world, the press, the academics and bureaucracy ". Samsung comprises around 80 companies. Its activities include construction , consumer electronics , financial services , shipbuilding , and medical services , and two research and development stations that have allowed the chaebol to enter the industries of "high-polymer chemicals , genetic engineering tools [and biotech as
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#17327828224381800-437: A hard-wired dynamic memory. Paper tape was read and the characters on it "were remembered in a dynamic store." The store used a large bank of capacitors, which were either charged or not, a charged capacitor representing cross (1) and an uncharged capacitor dot (0). Since the charge gradually leaked away, a periodic pulse was applied to top up those still charged (hence the term 'dynamic')". In November 1965, Toshiba introduced
1950-412: A logic one requires the wordline be driven to a voltage greater than the sum of V CC and the access transistor's threshold voltage (V TH ). This voltage is called V CC pumped (V CCP ). The time required to discharge a capacitor thus depends on what logic value is stored in the capacitor. A capacitor containing logic one begins to discharge when the voltage at the access transistor's gate terminal
2100-413: A longer burst length of 16, higher capacity support, and improved signal integrity with tighter pin spacing (0.85 mm vs. 1.0 mm), slightly increased height (31.25 mm vs. 30.35 mm), and increased thickness (1.2 mm vs. 1.0 mm) for better signal routing and performance. Internal banks are increased to 16 (4 bank select bits), with up to 8 ranks per DIMM. Protocol changes include: Increased memory density
2250-603: A major driving force behind the " Miracle on the Han River ". Its affiliate companies produce around a fifth of South Korea's total exports. Samsung's revenue was equal to 22.4% of South Korea's $ 1.67 trillion GDP in 2022. "You can even say the Samsung chairman is more powerful than the President of South Korea . [South] Korean people have come to think of Samsung as invincible and above the law", said Woo Suk-hoon, host of
2400-568: A minimum transfer rate of 2133 MT/s , influenced by DDR3's nearing limit at similar speeds, and is expected to reach up to 4266 MT/s . Notable improvements in DDR4 include increased data transfer rates and enhanced efficiency. Early DDR4 samples, such as those from Samsung in January 2011, showed a CAS latency of 13 clock cycles , comparable to the DDR2 to DDR3 transition. Additionally, DDR4 features
2550-463: A popular economics podcast in a Washington Post article headlined "In South Korea, the Republic of Samsung", published on 9 December 2012. Critics claimed that Samsung knocked out smaller businesses, limiting choices for South Korean consumers and sometimes colluded with fellow giants to fix prices while bullying those who investigate. Lee Jung-hee , a South Korean presidential candidate, said in
2700-519: A premium. Unlike DDR3, DDR4 does not have a low voltage variant; it consistently operates at 1.2 V . Additionally, DDR4 improves on DDR3 with a longer burst length of 16 and supports larger memory capacities, enhancing both performance and system flexibility. In April 2013, a news writer at International Data Group (IDG) – an American technology research business originally part of IDC – produced an analysis of their perceptions related to DDR4 SDRAM. The conclusions were that
2850-611: A range of aircraft from the 1980s to the 1990s. The company was founded in 1999 as Korea Aerospace Industries (KAI), the result of a merger between then three domestic major aerospace divisions of Samsung Aerospace , Daewoo Heavy Industries and Hyundai Space and Aircraft Company. However, Samsung still manufactures aircraft engines and gas turbines . In 2000, Samsung R&D opened a development center in Warsaw , Poland . Its work began with set-top-box technology before moving into digital TV and smartphones . The smartphone platform
3000-433: A rock and a hard place" where "nobody wants to pay a premium for DDR4 products, and manufacturers don't want to make the memory if they are not going to get a premium", according to Mike Howard from iSuppli. A switch in consumer sentiment toward desktop computing and release of processors having DDR4 support by Intel and AMD could therefore potentially lead to "aggressive" growth. Intel's 2014 Haswell roadmap, revealed
3150-638: A serial interface. Many other computer buses have migrated towards replacing parallel buses with serial buses, for example by the evolution of Serial ATA replacing Parallel ATA , PCI Express replacing PCI , and serial ports replacing parallel ports. In general, serial buses are easier to scale up and have fewer wires/traces, making circuit boards using them easier to design. In the longer term, experts speculate that non-volatile RAM types like PCM ( phase-change memory ), RRAM ( resistive random-access memory ), or MRAM ( magnetoresistive random-access memory ) could replace DDR4 SDRAM and its successors. GDDR5 SGRAM
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#17327828224383300-467: A single bitline contact) from a column, then move the DRAM cells from an adjacent column into the voids. The location where the bitline twists occupies additional area. To minimize area overhead, engineers select the simplest and most area-minimal twisting scheme that is able to reduce noise under the specified limit. As process technology improves to reduce minimum feature sizes, the signal to noise problem worsens, since coupling between adjacent metal wires
3450-407: A single chip, to accommodate more capacity without becoming too slow. When such a RAM is accessed by clocked logic, the times are generally rounded up to the nearest clock cycle. For example, when accessed by a 100 MHz state machine (i.e. a 10 ns clock), the 50 ns DRAM can perform the first read in five clock cycles, and additional reads within the same page every two clock cycles. This
3600-404: A slightly curved edge connector so not all of the pins are engaged at the same time during module insertion, lowering the insertion force. DDR4 SO-DIMMs have 260 pins instead of the 204 pins of DDR3 SO-DIMMs, spaced at 0.5 rather than 0.6 mm, and are 2.0 mm wider (69.6 versus 67.6 mm), but remain the same 30 mm in height. For its Skylake microarchitecture , Intel designed
3750-575: A small trading company with forty employees located in Su-dong (now Ingyo-dong). It dealt in dried fish, locally-grown groceries and noodles. The company prospered and Lee moved its head office to Seoul in 1947. When the Korean War broke out, he was forced to leave Seoul. He started a sugar refinery in Busan named Cheil Jedang . In 1954, Lee founded Cheil Mojik , a textiles company, and built
3900-462: A time determined by an external timer function that governs the operation of the rest of a system, such as the vertical blanking interval that occurs every 10–20 ms in video equipment. The row address of the row that will be refreshed next is maintained by external logic or a counter within the DRAM. A system that provides the row address (and the refresh command) does so to have greater control over when to refresh and which row to refresh. This
4050-839: A total premium income of $ 11.7 billion in 2011 and total assets of $ 28.81 billion on 31 March 2011. It is the largest provider of general insurance in South Korea. Samsung Fire has been listed on the Korea Exchange stock market since 1975 (number 000810). Samsung Heavy Industries is a shipbuilding and engineering company headquartered in Seoul, founded in August 1974. Its principal products are bulk carriers, container vessels, crude oil tankers, cruisers, passenger ferries, material handling equipment steel and bridge structures. It achieved total revenues of 13,358.6 billion won in 2011 and
4200-444: A value is read, modified, and then written back as a single, indivisible operation (Jacob, p. 459). The one-transistor, zero-capacitor (1T, or 1T0C) DRAM cell has been a topic of research since the late-1990s. 1T DRAM is a different way of constructing the basic DRAM memory cell, distinct from the classic one-transistor/one-capacitor (1T/1C) DRAM cell, which is also sometimes referred to as 1T DRAM , particularly in comparison to
4350-509: A very wide parallel memory interface—up to 512 bits for Wide I/O 2 compared to 64 bits for DDR4—although they operate at lower frequencies than DDR4. Wide I/O 2 is designed for high-performance, compact devices, often integrated into processors or system on a chip (SoC) packages. In contrast, HBM targets graphics memory and general computing, while Hybrid Memory Cube (HMC) is aimed at high-end servers and enterprise applications. Micron Technology 's Hybrid Memory Cube (HMC) stacked memory uses
4500-488: A voltage of 1.2 V and supports frequencies between 800 and 1600 MHz (DDR4-1600 through DDR4-3200). Compared to DDR3, which operates at 1.5 V with frequencies from 400 to 1067 MHz (DDR3-800 through DDR3-2133), DDR4 offers better performance and energy efficiency . DDR4 speeds are advertised as double the base clock rate due to its Double Data Rate (DDR) nature, with common speeds including DDR4-2400 and DDR4-3200, and higher speeds like DDR4-4266 and DDR4-5000 available at
4650-513: A whole], aerospace , and nanotechnology ." As of April 2011, the Samsung Group comprised 59 unlisted companies and 19 listed companies, all of which had their primary listing on the Korea Exchange . In FY 2009, Samsung reported consolidated revenues of 220 trillion KRW ($ 172.5 billion). In FY 2010, Samsung reported consolidated revenues of 280 trillion KRW ($ 258 billion), and profits of 30 trillion KRW ($ 27.6 billion) based upon
DDR4 SDRAM - Misplaced Pages Continue
4800-450: Is 3-4-4-8 with a 200 MHz clock, while premium-priced high performance PC3200 DDR DRAM DIMM might be operated at 2-2-2-5 timing. Minimum random access time has improved from t RAC = 50 ns to t RCD + t CL = 22.5 ns , and even the premium 20 ns variety is only 2.5 times faster than the asynchronous DRAM. CAS latency has improved even less, from t CAC = 13 ns to 10 ns. However,
4950-482: Is Korea's largest IT service company. It achieved total revenues of 6,105.9 billion won (US$ 5.71 billion) in 2012. Samsung C&T Corporation is listed on the Korea Exchange stock market (000830). Samsung Electro-Mechanics , established in 1973 as a manufacturer of key electronic components, is headquartered in Suwon , South Korea. It is listed on the Korea Exchange stock market (number 009150). Samsung Advanced Institute of Technology (SAIT), established in 1987,
5100-495: Is a graphics type of DDR3 synchronous graphics RAM , which was introduced before DDR4, and is not a successor to DDR4. Dynamic random-access memory Dynamic random-access memory ( dynamic RAM or DRAM ) is a type of random-access semiconductor memory that stores each bit of data in a memory cell , usually consisting of a tiny capacitor and a transistor , both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use
5250-682: Is a tertiary hospital staffed by approximately 7,400, including over 1,200 doctors and 2,300 nurses. Since its foundation in the 1990s, the Samsung Medical Center has successfully incorporated and developed an advanced model with the motto of becoming a "patient-centered hospital", a new concept in Korea. Samsung donates around US$ 100 million per annum to the Samsung Medical Center. It incorporates Samsung Seoul Hospital, Kangbuk Samsung Hospital, Samsung Changwon Hospital, Samsung Cancer Center and Samsung Life Sciences Research Center. In 2010,
5400-442: Is able to offer better long-term area efficiencies; since folded array architectures require increasingly complex folding schemes to match any advance in process technology. The relationship between process technology, array architecture, and area efficiency is an active area of research. The first DRAM integrated circuits did not have any redundancy. An integrated circuit with a defective DRAM cell would be discarded. Beginning with
5550-439: Is above V CCP . If the capacitor contains a logic zero, it begins to discharge when the gate terminal voltage is above V TH . Up until the mid-1980s, the capacitors in DRAM cells were co-planar with the access transistor (they were constructed on the surface of the substrate), thus they were referred to as planar capacitors. The drive to increase both density and, to a lesser extent, performance, required denser designs. This
5700-433: Is also used in many portable devices and video game consoles. In contrast, SRAM, which is faster and more expensive than DRAM, is typically used where speed is of greater concern than cost and size, such as the cache memories in processors . The need to refresh DRAM demands more complicated circuitry and timing than SRAM. This complexity is offset by the structural simplicity of DRAM memory cells: only one transistor and
5850-433: Is anticipated, possibly using TSV (" through-silicon via ") or other 3D stacking processes . The DDR4 specification will include standardized 3D stacking "from the start" according to JEDEC, with provision for up to 8 stacked dies. X-bit Labs predicted that "as a result DDR4 memory chips with very high density will become relatively inexpensive". Switched memory banks are also an anticipated option for servers. In 2008,
6000-413: Is done to minimize conflicts with memory accesses, since such a system has both knowledge of the memory access patterns and the refresh requirements of the DRAM. When the row address is supplied by a counter within the DRAM, the system relinquishes control over which row is refreshed and only provides the refresh command. Some modern DRAMs are capable of self-refresh; no external logic is required to instruct
6150-436: Is fully at its highest voltage and the other bit-line is at the lowest possible voltage. To store data, a row is opened and a given column's sense amplifier is temporarily forced to the desired high or low-voltage state, thus causing the bit-line to charge or discharge the cell storage capacitor to the desired value. Due to the sense amplifier's positive feedback configuration, it will hold a bit-line at stable voltage even after
DDR4 SDRAM - Misplaced Pages Continue
6300-405: Is given as n F , where n is a number derived from the DRAM cell design, and F is the smallest feature size of a given process technology. This scheme permits comparison of DRAM size over different process technology generations, as DRAM cell area scales at linear or near-linear rates with respect to feature size. The typical area for modern DRAM cells varies between 6–8 F . The horizontal wire,
6450-534: Is headquartered in Incheon, South Korea and its existing three plants comprises the largest biologic contract manufacturing complex. It expanded its contract development service lab to San Francisco, U.S. Samsung Biologics is listed on the Korean Exchange stock market (number 207940). Samsung Bioepis is a biosimilar medicine producer and joint venture between Samsung Biologics (50 per cent plus one share) and
6600-453: Is headquartered in Suwon and operates research labs around the world. Ace Digitech is listed on the Korea Exchange stock market (number 036550). Cheil Industries is listed on the Korea Exchange stock market (number 001300). Cheil Worldwide is a marketing company that offers advertising, public relations, etc. It is listed on the Korea Exchange stock market (number 030000). Credu
6750-553: Is high. The combination of RAS =L and CAS = WE =H that previously encoded an activate command is unused. As in previous SDRAM encodings, A10 is used to select command variants: auto-precharge on read and write commands, and one bank vs. all banks for the precharge command. It also selects two variants of the ZQ calibration command. As in DDR3, A12 is used to request burst chop : truncation of an 8-transfer burst after four transfers. Although
6900-424: Is inversely proportional to their pitch. The array folding and bitline twisting schemes that are used must increase in complexity in order to maintain sufficient noise reduction. Schemes that have desirable noise immunity characteristics for a minimal impact in area is the topic of current research (Kenner, p. 37). Advances in process technology could result in open bitline array architectures being favored if it
7050-408: Is limited by its capacitance (which increases with length), which must be kept within a range for proper sensing (as DRAMs operate by sensing the charge of the capacitor released onto the bitline). Bitline length is also limited by the amount of operating current the DRAM can draw and by how power can be dissipated, since these two characteristics are largely determined by the charging and discharging of
7200-712: Is listed on the Korea Exchange stock market (number 02803450). Samsung Fire & Marine Insurance is a multinational general insurance company headquartered in Seoul. It was founded in January 1952 as Korea Anbo Fire and Marine Insurance and was renamed Samsung Fire & Marine Insurance in December 1993. Samsung Fire & Marine Insurance offers services including accident insurance, automobile insurance, casualty insurance, fire insurance, liability insurance , marine insurance , personal pensions and loans. As of March 2011 it had operations in 10 countries and 6.5 million customers. Samsung Fire & Marine Insurance had
7350-638: Is listed on the Korea Exchange stock market (number 032830). Samsung SDI builds lithium-ion batteries for electric vehicles such as the BMW i3 , and acquired Magna Steyr 's battery plant near Graz in 2015. Samsung SDI also produced CRTs and VFD displays until 2012. SDI began using the " 21700 " cell format in August 2015. Samsung plans to convert its factory in Göd , Hungary to supply 50,000 cars per year. Samsung SDI uses lithium-ion technology for its phone and portable computer batteries. On 5 December 2012,
7500-465: Is listed on the Korea Exchange stock market (number 067280). Imarket Korea provides procurement services and business-to-business goods. It is listed on the Korea Exchange stock market (number 122900). Samsung Card is a South Korean credit card company. It is listed on the Korea Exchange stock market (number 029780). Hotel Shilla (also known as "The Shilla") opened in March 1979, following
7650-489: Is the clearest way to compare between the performance of different DRAM memories, as it sets the slower limit regardless of the row length or page size. Bigger arrays forcibly result in larger bit line capacitance and longer propagation delays, which cause this time to increase as the sense amplifier settling time is dependent on both the capacitance as well as the propagation latency. This is countered in modern DRAM chips by instead integrating many more complete DRAM arrays within
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#17327828224387800-610: Is the largest provider of life insurance in South Korea. Samsung Air China Life Insurance is a 50:50 joint venture between Samsung Life Insurance and China National Aviation Holding . It was established in Beijing in July 2005. Siam Samsung Life Insurance: Samsung Life Insurance holds a 37 per cent stake while the Saha Group also has a 37.5 per cent stake in the joint venture, with the remaining 25 per cent owned by Thanachart Bank. It
7950-719: Is the world's second-largest shipbuilder by revenues (after Hyundai Heavy Industries ). It is listed on the Korea Exchange stock market (number 010140). Samsung Life Insurance is a multinational life insurance company headquartered in Seoul, founded in March 1957 as Dongbang Life Insurance. It became an affiliate of the Samsung Group in July 1963. Samsung Life's principal activity is the provision of individual life insurance and annuity products and services. As of December 2011 it had operations in seven countries, 8.08 million customers and 5,975 employees. Samsung Life had total sales of 22,717 billion won in 2011 and total assets of 161,072 billion won at 31 December 2011. It
8100-443: Is usually arranged in a rectangular array of charge storage cells consisting of one capacitor and transistor per data bit. The figure to the right shows a simple example with a four-by-four cell matrix. Some DRAM matrices are many thousands of cells in height and width. The long horizontal lines connecting each row are known as word-lines. Each column of cells is composed of two bit-lines, each connected to every other storage cell in
8250-642: The Wide I/O 2 standard, which features stacked memory dies placed directly on top of the CPU within the same package. This configuration provides higher bandwidth and improved power efficiency compared to DDR4 SDRAM, thanks to its wide interface and short signal lengths. Wide I/O 2 aims to replace various mobile DDRX SDRAM standards used in high-performance embedded and mobile devices like smartphones. In parallel, Hynix developed High Bandwidth Memory (HBM) , standardized as JEDEC JESD235. Both Wide I/O 2 and HBM utilize
8400-463: The 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm (5¼ inches). The height of DDR4 modules is slightly increased to 31.25 mm (1.23 inches) from 30.35 mm (1.2 inches) to facilitate easier signal routing. Additionally, the thickness of DDR4 modules has been increased to 1.2 mm from 1.0 mm to support more signal layers, enhancing overall performance and reliability. DDR4 DIMM modules have
8550-811: The Burj Khalifa in United Arab Emirates. In 1993, Lee Kun-hee sold off ten of Samsung Group's subsidiaries, downsized the company, and merged other operations to concentrate on three industries: electronics, engineering and chemicals. In 1996, the Samsung Group reacquired the Sungkyunkwan University foundation. Samsung became the world's largest producer of memory chips in 1992 and is the world's second-largest chipmaker after Intel (see Worldwide Top 20 Semiconductor Market Share Ranking Year by Year). In 1995, it created its first liquid-crystal display screen. Samsung grew to be
8700-506: The Intel 1103 , in October 1970, despite initial problems with low yield until the fifth revision of the masks . The 1103 was designed by Joel Karp and laid out by Pat Earhart. The masks were cut by Barbara Maness and Judy Garcia. MOS memory overtook magnetic-core memory as the dominant memory technology in the early 1970s. The first DRAM with multiplexed row and column address lines was
8850-472: The JEDEC standard. Some systems refresh every row in a burst of activity involving all rows every 64 ms. Other systems refresh one row at a time staggered throughout the 64 ms interval. For example, a system with 2 = 8,192 rows would require a staggered refresh rate of one row every 7.8 μs which is 64 ms divided by 8,192 rows. A few real-time systems refresh a portion of memory at
9000-588: The Korean hanja Samsung ( 三 星 ) is three stars . The three stands for something big, numerous and powerful , while stars stands for everlasting or eternal . In 1938, during Japanese-ruled Korea , Lee Byung-chul (1910–1987) of a large landowning family in the Uiryeong county moved to nearby Daegu and founded Mitsuboshi Trading Company (株式会社三星商会 ( Kabushiki gaisha Mitsuboshi Shōkai ) ), or Samsung Sanghoe ( 주식회사 삼성상회 ). Samsung started out as
9150-497: The Mostek MK4096 4 Kbit DRAM designed by Robert Proebsting and introduced in 1973. This addressing scheme uses the same address pins to receive the low half and the high half of the address of the memory cell being referenced, switching between the two halves on alternating bus cycles. This was a radical advance, effectively halving the number of address lines required, which enabled it to fit into packages with fewer pins,
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#17327828224389300-448: The world's largest mobile phone maker by unit sales, overtaking Nokia , which had been the market leader since 1998. On 24 August 2012, nine American jurors ruled that Samsung Electronics had to pay Apple $ 1.05 billion in damages for violating six of its patents on smartphone technology. The award was still less than the $ 2.5 billion requested by Apple. The decision also ruled that Apple did not violate five Samsung patents cited in
9450-404: The /RAS low to valid data out time. This is the time to open a row, settle the sense amplifiers, and deliver the selected column data to the output. This is also the minimum /RAS low time, which includes the time for the amplified data to be delivered back to recharge the cells. The time to read additional bits from an open page is much less, defined by the /CAS to /CAS cycle time. The quoted number
9600-721: The 1980s, Samsung Electronics began to invest heavily in research and development, investments that were pivotal in pushing the company to the forefront of the global electronics industry. In 1982, it built a television assembly plant in Portugal; in 1984, a plant in New York; in 1985, a plant in Tokyo; in 1987, a facility in England; and another facility in Austin, Texas , in 1996. As of 2012, Samsung has invested more than US$ 13 billion in
9750-504: The 3T and 4T DRAM which it replaced in the 1970s. In 1T DRAM cells, the bit of data is still stored in a capacitive region controlled by a transistor, but this capacitance is no longer provided by a separate capacitor. 1T DRAM is a "capacitorless" bit cell design that stores data using the parasitic body capacitance that is inherent to silicon on insulator (SOI) transistors. Considered a nuisance in logic design, this floating body effect can be used for data storage. This gives 1T DRAM cells
9900-464: The 3T1C cell for performance reasons (Kenner, p. 6). These performance advantages included, most significantly, the ability to read the state stored by the capacitor without discharging it, avoiding the need to write back what was read out (non-destructive read). A second performance advantage relates to the 3T1C cell's separate transistors for reading and writing; the memory controller can exploit this feature to perform atomic read-modify-writes, where
10050-462: The 64 Kbit generation, DRAM arrays have included spare rows and columns to improve yields. Spare rows and columns provide tolerance of minor fabrication defects which have caused a small number of rows or columns to be inoperable. The defective rows and columns are physically disconnected from the rest of the array by a triggering a programmable fuse or by cutting the wire by a laser. The spare rows or columns are substituted in by remapping logic in
10200-484: The 8n used in DDR3; the basic burst size is eight 64-bit words, and higher bandwidths are achieved by sending more read/write commands per second. To allow this, the standard divides the DRAM banks into two or four selectable bank groups, where transfers to different bank groups may be done more rapidly. Because power consumption increases with speed, the reduced voltage allows higher speed operation without unreasonable power and cooling requirements. DDR4 RAM operates at
10350-633: The Austin facility, which operates under the name Samsung Austin Semiconductor. This makes the Austin location the largest foreign investment in Texas and one of the largest single foreign investments in the United States. In 1987, United States International Trade Commission found that the Samsung Group of South Korea unlawfully sold computer chips in the United States without licenses from
10500-456: The DDR3 memory does achieve 32 times higher bandwidth; due to internal pipelining and wide data paths, it can output two words every 1.25 ns (1 600 Mword/s) , while the EDO DRAM can output one word per t PC = 20 ns (50 Mword/s). Each bit of data in a DRAM is stored as a positive or negative electrical charge in a capacitive structure. The structure providing
10650-518: The DRAM chips in them), such as Kingston Technology , and some manufacturers that sell stacked DRAM (used e.g. in the fastest supercomputers on the exascale ), separately such as Viking Technology . Others sell such integrated into other products, such as Fujitsu into its CPUs, AMD in GPUs, and Nvidia , with HBM2 in some of their GPU chips. The cryptanalytic machine code-named Aquarius used at Bletchley Park during World War II incorporated
10800-400: The DRAM to refresh or to provide a row address. Under some conditions, most of the data in DRAM can be recovered even if the DRAM has not been refreshed for several minutes. Many parameters are required to fully describe the timing of DRAM operation. Here are some examples for two timing grades of asynchronous DRAM, from a data sheet published in 1998: Thus, the generally quoted number is
10950-533: The European Union's antitrust regulator fined Samsung SDI and several other major companies for fixing prices of TV cathode-ray tubes in two cartels lasting nearly a decade. It is listed on the Korea Exchange stock-exchange (number 006400). Samsung SDS is a multinational IT Service company, founded in March 1985. Its main activity is the deployment of IT systems ( ERP , IT infrastructure, IT consulting, IT outsourcing, data center operation, etc.). It
11100-516: The Korean government reviewed the number of media outlets allowed. TBC allowed an early success thanks to its connections to Samsung, boosting the sale of its television sets. In 1980, Samsung acquired the Gumi -based Hanguk Jeonja Tongsin and entered telecommunications hardware. Its early products were switchboards. The facility was developed into the telephone and fax manufacturing systems and became
11250-404: The Samsung Group in 1991, it severed all payment guarantees and share-holding ties with Samsung affiliates." One Hansol Group source asserted, "Hansol, Shinsegae, and CJ have been under independent management since their respective separations from the Samsung Group". One Shinsegae department store executive director said, "Shinsegae has no payment guarantees associated with the Samsung Group". In
11400-448: The Samsung Medical Center and pharmaceutical multinational Pfizer agreed to collaborate on research to identify the genomic mechanisms responsible for clinical outcomes in hepatocellular carcinoma . Hanhwa Techwin was a developer and manufacturer of surveillance (including security cameras), aeronautics , optoelectronics , automations and weapons technology . It was announced to be sold to Hanwha Group in December 2014 and
11550-488: The Samsung Trading Corporation, with the Samsung's founder Lee Byung-chul. The trading firm grew to become the now Samsung C&T Corporation . After a few years, Cho and Lee separated due to differences in management style. Cho wanted a 30 equity share. Samsung Group was separated into Samsung Group and Hyosung Group, Hankook Tire and other businesses. In the late 1960s, Samsung Group entered
11700-411: The Samsung brand, and is the largest South Korean chaebol (business conglomerate). As of 2024, Samsung has the world's fifth-highest brand value . Samsung was founded by Lee Byung-chul in 1938 as a trading company . Over the next three decades, the group diversified into areas including food processing, textiles, insurance, securities, and retail. Samsung entered the electronics industry in
11850-659: The U.S.-based Biogen Idec (50 per cent). In 2014, Biogen Idec agreed to commercialize future anti-TNF biosimilar products in Europe through Samsung Bioepis. Samsung Engineering is a multinational construction company headquartered in Seoul, founded in January 1969. Its principal activity is the construction of oil refining plants; upstream oil and gas facilities; petrochemical plants and gas plants; steel making plants; power plants ; water treatment facilities ; and other infrastructure. It achieved total revenues of 9,298.2 billion won (US$ 8.06 billion) in 2011. Samsung Engineering
12000-536: The US and worldwide markets during the 1980s and 1990s. Early in 1985, Gordon Moore decided to withdraw Intel from producing DRAM. By 1986, many, but not all, United States chip makers had stopped making DRAMs. Micron Technology and Texas Instruments continued to produce them commercially, and IBM produced them for internal use. In 1985, when 64K DRAM memory chips were the most common memory chips used in computers, and when more than 60 percent of those chips were produced by Japanese companies, semiconductor makers in
12150-494: The United States accused Japanese companies of export dumping for the purpose of driving makers in the United States out of the commodity memory chip business. Prices for the 64K product plummeted to as low as 35 cents apiece from $ 3.50 within 18 months, with disastrous financial consequences for some U.S. firms. On 4 December 1985 the US Commerce Department's International Trade Administration ruled in favor of
12300-459: The address lines to use address space layout randomization and dual-voltage I/O lines that further isolate potential boundary conditions that might result in instability at high write/read speeds. DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to
12450-411: The bank is still busy and unavailable for other commands until eight transfer times have elapsed, a different bank can be accessed. Also, the number of bank addresses has been increased greatly. There are four bank select bits to select up to 16 banks within each DRAM: two bank address bits (BA0, BA1), and two bank group bits (BG0, BG1). There are additional timing restrictions when accessing banks within
12600-625: The best medical service, advanced medical research and development of outstanding medical personnel". The Samsung Medical Center consists of a hospital and a cancer center, which is the largest in Asia. The hospital is located in an intelligent building with floor space of more than 200,000 square meters and 20 floors above ground and 5 floors underground, housing 40 departments, 10 specialist centers, 120 special clinics and 1,306 beds. The 655-bed Cancer Center has 11 floors above ground and 8 floors underground, with floor space of over 100,000 square meters. SMC
12750-479: The bitline, which is almost always made of polysilicon, but is otherwise identical to the COB variation. The advantage the COB variant possesses is the ease of fabricating the contact between the bitline and the access transistor's source as it is physically close to the substrate surface. However, this requires the active area to be laid out at a 45-degree angle when viewed from above, which makes it difficult to ensure that
12900-415: The bitline. Sense amplifiers are required to read the state contained in the DRAM cells. When the access transistor is activated, the electrical charge in the capacitor is shared with the bitline. The bitline's capacitance is much greater than that of the capacitor (approximately ten times). Thus, the change in bitline voltage is minute. Sense amplifiers are required to resolve the voltage differential into
13050-436: The bitlines are divided into multiple segments, and the differential sense amplifiers are placed in between bitline segments. Because the sense amplifiers are placed between bitline segments, to route their outputs outside the array, an additional layer of interconnect placed above those used to construct the wordlines and bitlines is required. The DRAM cells that are on the edges of the array do not have adjacent segments. Since
13200-491: The book Wafer Level 3-D ICs Process Technology highlighted concerns about the increasing die area consumption due to non-scaling analog elements like charge pumps , voltage regulators , and additional circuitry. These components, including CRC error-detection, on-die termination , burst hardware, programmable pipelines, low impedance, and a greater need for sense amplifiers (driven by reduced bits per bitline due to lower voltage), have significantly increased bandwidth but at
13350-417: The capacitance can be increased by etching a deeper hole without any increase to surface area (Kenner, p. 44). Another advantage of the trench capacitor is that its structure is under the layers of metal interconnect, allowing them to be more easily made planar, which enables it to be integrated in a logic-optimized process technology, which have many levels of interconnect above the substrate. The fact that
13500-406: The capacitance, as well as the transistors that control access to it, is collectively referred to as a DRAM cell . They are the fundamental building block in DRAM arrays. Multiple DRAM memory cell variants exist, but the most commonly used variant in modern DRAMs is the one-transistor, one-capacitor (1T1C) cell. The transistor is used to admit current into the capacitor during writes, and to discharge
13650-410: The capacitor contact does not touch the bitline. CUB cells avoid this, but suffer from difficulties in inserting contacts in between bitlines, since the size of features this close to the surface are at or near the minimum feature size of the process technology (Kenner, pp. 33–42). The trench capacitor is constructed by etching a deep hole into the silicon substrate. The substrate volume surrounding
13800-417: The capacitor during reads. The access transistor is designed to maximize drive strength and minimize transistor-transistor leakage (Kenner, p. 34). The capacitor has two terminals, one of which is connected to its access transistor, and the other to either ground or V CC /2. In modern DRAMs, the latter case is more common, since it allows faster operation. In modern DRAMs, a voltage of +V CC /2 across
13950-405: The capacitor is required to store a logic one; and a voltage of −V CC /2 across the capacitor is required to store a logic zero. The resultant charge is Q = ± V C C 2 ⋅ C {\textstyle Q=\pm {V_{CC} \over 2}\cdot C} , where Q is the charge in coulombs and C is the capacitance in farads . Reading or writing
14100-410: The capacitor is under the logic means that it is constructed before the transistors are. This allows high-temperature processes to fabricate the capacitors, which would otherwise degrade the logic transistors and their performance. This makes trench capacitors suitable for constructing embedded DRAM (eDRAM) (Jacob, p. 357). Disadvantages of trench capacitors are difficulties in reliably constructing
14250-426: The capacitor to the write bitline just as in the 1T1C cell, but there was a separate read wordline and read transistor which connected an amplifier transistor to the read bitline. By the second generation, the drive to reduce cost by fitting the same amount of bits in a smaller area led to the almost universal adoption of the 1T1C DRAM cell, although a couple of devices with 4 and 16 Kbit capacities continued to use
14400-404: The capacitor's structures within deep holes and in connecting the capacitor to the access transistor's drain terminal (Kenner, p. 44). First-generation DRAM ICs (those with capacities of 1 Kbit), such as the archetypical Intel 1103 , used a three-transistor, one-capacitor (3T1C) DRAM cell with separate read and write circuitry. The write wordline drove a write transistor which connected
14550-457: The case. Samsung decried the decision saying that the move could harm innovation in the sector. It also followed a South Korean ruling stating that both companies were guilty of infringing on each other's intellectual property. In first trading after the ruling, Samsung shares on the KOSPI fell 7.7%, the largest fall since 24 October 2008, to 1,177,000 South Korean won . Apple then sought to ban
14700-494: The center of Samsung's mobile phone manufacturing. They have produced over 800 million mobile phones to date. The company grouped them together under Samsung Electronics in the 1980s. After Lee, the founder's death in 1987, Samsung Group was separated into five business groups – Samsung Group, Shinsegae Group, CJ Group , Hansol Group and the JoongAng Group . Shinsegae (discount store, department store)
14850-569: The chip inventor, Texas Instruments Inc. Since 1990, Samsung has increasingly globalised its activities and electronics; in particular, its mobile phones and semiconductors have become its most important source of income. It was in this period that Samsung started to rise as an international corporation in the 1990s. Samsung's construction branch was awarded contracts to build one of the two Petronas Towers in Malaysia, Taipei 101 in Taiwan and
15000-480: The circuitry used to read/write them. Samsung Samsung Group ( Korean : 삼성 ; Hanja : 三星 ; RR : samseong [samsʌŋ] ; stylised as SΛMSUNG ) is a South Korean multinational manufacturing conglomerate headquartered in Samsung Digital City, Suwon , South Korea. It comprises numerous affiliated businesses, most of them united under
15150-482: The column (the illustration to the right does not include this important detail). They are generally known as the + and − bit lines. A sense amplifier is essentially a pair of cross-connected inverters between the bit-lines. The first inverter is connected with input from the + bit-line and output to the − bit-line. The second inverter's input is from the − bit-line with output to the + bit-line. This results in positive feedback which stabilizes after one bit-line
15300-597: The commercialized Z-RAM from Innovative Silicon, the TTRAM from Renesas and the A-RAM from the UGR / CNRS consortium. DRAM cells are laid out in a regular rectangular, grid-like pattern to facilitate their control and access via wordlines and bitlines. The physical layout of the DRAM cells in an array is typically designed so that two adjacent DRAM cells in a column share a single bitline contact to reduce their area. DRAM cell area
15450-651: The commission received complaints stating that the agency hired students to attack competitors of Samsung Electronics in online forums. Samsung Taiwan made an announcement on its Facebook page in which it stated that it had not interfered with any evaluation report and had stopped online marketing campaigns that constituted posting or responding to content in online forums. In 2015, Samsung has been granted more U.S. patents than any other company. The company received 7,679 utility patents through 11 December. The Galaxy Note 7 smartphone went on sale on 19 August 2016. However, in early September 2016, Samsung suspended sales of
15600-485: The company had raised a large number of secret funds through bank accounts illegally opened under the names of up to 1,000 Samsung executives – under his own name, four accounts were opened to manage 5 billion won . In 2010, Samsung announced a ten-year growth strategy centered around five businesses. One of these businesses was to be focused on biopharmaceuticals , to which has committed ₩ 2.1 trillion. In first quarter of 2012, Samsung Electronics became
15750-469: The company's first use of DDR4 SDRAM in Haswell-EP processors. AMD's Ryzen processors, revealed in 2016 and shipped in 2017, use DDR4 SDRAM. DDR4 RAM operates with a primary supply voltage of 1.2 V and an auxiliary 2.5 V supply for wordline boosting ( VPP ). This contrasts with DDR3 , which runs at 1.5 V and had lower voltage variants at 1.35 V introduced in 2013. DDR4 was introduced with
15900-463: The company. Kim said that Samsung lawyers trained executives to serve as scapegoats in a "fabricated scenario" to protect Lee, even though those executives were not involved. Kim also told the media that he was "sidelined" by Samsung after he refused to pay a $ 3.3 million bribe to the U.S. Federal District Court judge presiding over a case where two of their executives were found guilty on charges related to memory chip price-fixing. Kim revealed that
16050-588: The complaint. Synchronous dynamic random-access memory (SDRAM) was developed by Samsung . The first commercial SDRAM chip was the Samsung KM48SL2000, which had a capacity of 16 Mb , and was introduced in 1992. The first commercial DDR SDRAM ( double data rate SDRAM) memory chip was Samsung's 64 Mb DDR SDRAM chip, released in 1998. Later, in 2001, Japanese DRAM makers accused Korean DRAM manufacturers of dumping. In 2002, US computer makers made claims of DRAM price fixing . DRAM
16200-496: The cost of occupying more die area. Consequently, the proportion of die allocated to the memory array itself has decreased over time: from 70–78% for SDRAM and DDR1 to 47% for DDR2, 38% for DDR3, and potentially less than 30% for DDR4. The specification defined standards for ×4, ×8 and ×16 memory devices with capacities of 2, 4, 8 and 16 Gbit. In addition to bandwidth and capacity variants, DDR4 modules can optionally implement: Although it still operates in fundamentally
16350-459: The data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory , DRAM is volatile memory (vs. non-volatile memory ), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence . DRAM typically takes
16500-412: The differential sense amplifiers require identical capacitance and bitline lengths from both segments, dummy bitline segments are provided. The advantage of the open bitline array is a smaller array area, although this advantage is slightly diminished by the dummy bitline segments. The disadvantage that caused the near disappearance of this architecture is the inherent vulnerability to noise , which affects
16650-558: The effectiveness of the differential sense amplifiers. Since each bitline segment does not have any spatial relationship to the other, it is likely that noise would affect only one of the two bitline segments. The folded bitline array architecture routes bitlines in pairs throughout the array. The close proximity of the paired bitlines provide superior common-mode noise rejection characteristics over open bitline arrays. The folded bitline array architecture began appearing in DRAM ICs during
16800-539: The electronics industry. It formed several electronics-related divisions, such as Samsung Electronics Devices, Samsung Electro-Mechanics, Samsung Corning and Samsung Semiconductor & Telecommunications, and opened the facility in Suwon . Its first product was a black-and-white television set. Byung-chul was also the owner of the Tongyang Broadcasting Company , a private radio and television company that existed from 1964 to 1980, shut down after
16950-560: The first plant in Chimsan-dong, Daegu . It was the largest woollen mill in the country at the time of construction. Samsung diversified into many different areas. Lee sought to establish Samsung as a leader in a wide range of industries. Samsung moved into lines of business such as insurance, securities, and retail. In 1947, Cho Hong-jai, the Hyosung group's founder, jointly invested in a new company called Samsung Mulsan Gongsa, or
17100-418: The forcing voltage is removed. During a write to a particular cell, all the columns in a row are sensed simultaneously just as during reading, so although only a single column's storage-cell capacitor charge is changed, the entire row is refreshed (written back in), as illustrated in the figure to the right. Typically, manufacturers specify that each row must be refreshed every 64 ms or less, as defined by
17250-468: The form of an integrated circuit chip, which can consist of dozens to billions of DRAM memory cells. DRAM chips are widely used in digital electronics where low-cost and high-capacity computer memory is required. One of the largest applications for DRAM is the main memory (colloquially called the RAM) in modern computers and graphics cards (where the main memory is called the graphics memory ). It
17400-512: The greatest density as well as allowing easier integration with high-performance logic circuits since they are constructed with the same SOI process technologies. Refreshing of cells remains necessary, but unlike with 1T1C DRAM, reads in 1T DRAM are non-destructive; the stored charge causes a detectable shift in the threshold voltage of the transistor. Performance-wise, access times are significantly better than capacitor-based DRAMs, but slightly worse than SRAM. There are several types of 1T DRAMs:
17550-489: The hole is then heavily doped to produce a buried n plate with low resistance. A layer of oxide-nitride-oxide dielectric is grown or deposited, and finally the hole is filled by depositing doped polysilicon, which forms the top plate of the capacitor. The top of the capacitor is connected to the access transistor's drain terminal via a polysilicon strap (Kenner, pp. 42–44). A trench capacitor's depth-to-width ratio in DRAMs of
17700-484: The increasing popularity of mobile computing and other devices using slower but low-powered memory, the slowing of growth in the traditional desktop computing sector, and the consolidation of the memory manufacturing marketplace, meant that margins on RAM were tight. As a result, the desired premium pricing for the new technology was harder to achieve, and capacity had shifted to other sectors. SDRAM manufacturers and chipset creators were, to an extent, "stuck between
17850-419: The intention of the late Lee Byung-chul , founder of the Samsung Group. Shilla Hotels and Resorts is listed on the Korea Exchange stock market (number 008770). Samsung C&T Corporation covers the three main sectors of Environment & Asset, Food Culture and Resort. Samsung Medical Center was founded on 9 November 1994, under the philosophy of "contributing to improving the nation's health through
18000-893: The late 1960s and the construction and shipbuilding industries in the mid-1970s; these areas would drive its subsequent growth. Following Lee's death in 1987, Samsung was separated into five business groups – Samsung Group, Shinsegae Group, CJ Group , Hansol Group, and JoongAng Group. Samsung industrial affiliates include Samsung Electronics , Samsung Heavy Industries , Samsung Engineering and Samsung C&T Corporation . Other subsidiaries include Samsung Life Insurance and Cheil Worldwide . Notable Samsung industrial affiliates include Samsung Electronics (the world's largest information technology company , consumer electronics maker and chipmaker measured by 2017 revenues), Samsung Heavy Industries (the world's second largest shipbuilder measured by 2010 revenues), and Samsung Engineering and Samsung C&T Corporation (respectively
18150-425: The lengths of the bitlines and the number of attached DRAM cells attached to them are equal, two basic architectures to array design have emerged to provide for the requirements of the sense amplifiers: open and folded bitline arrays. The first generation (1 Kbit) DRAM ICs, up until the 64 Kbit generation (and some 256 Kbit generation devices) had open bitline array architectures. In these architectures,
18300-471: The levels specified by the logic signaling system. Modern DRAMs use differential sense amplifiers, and are accompanied by requirements as to how the DRAM arrays are constructed. Differential sense amplifiers work by driving their outputs to opposing extremes based on the relative voltages on pairs of bitlines. The sense amplifiers function effectively and efficient only if the capacitance and voltages of these bitline pairs are closely matched. Besides ensuring that
18450-659: The lower price of the then-dominant magnetic-core memory. Capacitors had also been used for earlier memory schemes, such as the drum of the Atanasoff–Berry Computer , the Williams tube and the Selectron tube . In 1966, Dr. Robert Dennard invented modern DRAM architecture in which there's a single MOS transistor per capacitor, at the IBM Thomas J. Watson Research Center , while he was working on MOS memory and
18600-402: The mid-1980s, beginning with the 256 Kbit generation. This architecture is favored in modern DRAM ICs for its superior noise immunity. This architecture is referred to as folded because it takes its basis from the open array architecture from the perspective of the circuit schematic. The folded array architecture appears to remove DRAM cells in alternate pairs (because two DRAM cells share
18750-407: The mid-2000s can exceed 50:1 (Jacob, p. 357). Trench capacitors have numerous advantages. Since the capacitor is buried in the bulk of the substrate instead of lying on its surface, the area it occupies can be minimized to what is required to connect it to the access transistor's drain terminal without decreasing the capacitor's size, and thus capacitance (Jacob, pp. 356–357). Alternatively,
18900-540: The phone and announced an informal recall. This occurred after some units of the phones had batteries with a defect that caused them to produce excessive heat, leading to fires and explosions. Samsung replaced the recalled units of the phones with a new version; however, it was later discovered that the new version of the Galaxy Note 7 also had the battery defect. Samsung recalled all Galaxy Note 7 smartphones worldwide on 10 October 2016, and permanently ended production of
19050-465: The phone the following day. In 2018, they inaugurated the world's largest mobile manufacturing facility in Noida , India, in the presence of Indian Prime Minister Narendra Modi and South Korean President Moon Jae-in . In 2023, Samsung announced its decision to reduce the production of memory chips. This action is on account of the company's projected 96% decline in quarterly operating profit -
19200-693: The public market in Q2 ;2014, focusing on ECC memory , while the non-ECC DDR4 modules became available in Q3 ;2014, accompanying the launch of Haswell-E processors that require DDR4 memory. The primary advantages of DDR4 over its predecessor, DDR3, include higher module density and lower voltage requirements, coupled with higher data rate transfer speeds. The DDR4 standard allows for DIMMs of up to 64 GB in capacity, compared to DDR3's maximum of 16 GB per DIMM. Unlike previous generations of DDR memory, prefetch has not been increased above
19350-422: The row and column decoders (Jacob, pp. 358–361). Electrical or magnetic interference inside a computer system can cause a single bit of DRAM to spontaneously flip to the opposite state. The majority of one-off (" soft ") errors in DRAM chips occur as a result of background radiation , chiefly neutrons from cosmic ray secondaries, which may change the contents of one or more memory cells or interfere with
19500-486: The sales of eight Samsung phones (Galaxy S 4G, Galaxy S2 AT&T , Galaxy S2 Skyrocket, Galaxy S2 T-Mobile, Galaxy S2 Epic 4G, Galaxy S Showcase, Droid Charge and Galaxy Prevail) in the United States, but this was denied by the court. As of 2013, the Fair Trade Commission of Taiwan is investigating Samsung and its local Taiwanese advertising agency for false advertising . The case was commenced after
19650-882: The same bank group; it is faster to access a bank in a different bank group. In addition, there are three chip select signals (C0, C1, C2), allowing up to eight stacked chips to be placed inside a single DRAM package. These effectively act as three more bank select bits, bringing the total to seven (128 possible banks). Standard transfer rates are 1600, 1866, 2133, 2400, 2666, 2933, and 3200 MT/s ( 12 ⁄ 15 , 14 ⁄ 15 , 16 ⁄ 15 , 18 ⁄ 15 , 20 ⁄ 15 , 22 ⁄ 15 , and 24 ⁄ 15 GHz clock frequencies, double data rate), with speeds up to DDR4-4800 (2400 MHz clock) commercially available. The DDR4 team at Micron Technology identified some key points for IC and PCB design: IC design: Circuit board design: Rowhammer mitigation techniques include larger storage capacitors, modifying
19800-429: The same dimensions and number of pins as regular DDR4 SO-DIMMs, but the edge connector's notch is placed differently to avoid accidental use in incompatible DDR4 SO-DIMM sockets. DDR4-xxxx denotes per-bit data transfer rate, and is normally used to describe DDR chips. PC4-xxxxx denotes overall transfer rate, in megabytes per second, and applies only to modules (assembled DIMMs). Because DDR4 memory modules transfer data on
19950-422: The same way, DDR4 makes one major change to the command formats used by previous SDRAM generations . A new command signal, ACT , is low to indicate the activate (open row) command. The activate command requires more address bits than any other (18 row address bits in a 16 Gbit part), so the standard RAS , CAS , and WE active low signals are shared with high-order address bits that are not used when ACT
20100-492: The single-transistor MOS DRAM memory cell. He filed a patent in 1967, and was granted U.S. patent number 3,387,286 in 1968. MOS memory offered higher performance, was cheaper, and consumed less power, than magnetic-core memory. The patent describes the invention: "Each cell is formed, in one embodiment, using a single field-effect transistor and a single capacitor." MOS DRAM chips were commercialized in 1969 by Advanced Memory Systems, Inc of Sunnyvale, CA . This 1024 bit chip
20250-399: The stacked capacitor, based on its location relative to the bitline—capacitor-under-bitline (CUB) and capacitor-over-bitline (COB). In the former, the capacitor is underneath the bitline, which is usually made of metal, and the bitline has a polysilicon contact that extends downwards to connect it to the access transistor's source terminal. In the latter, the capacitor is constructed above
20400-462: The substrate surface are referred to as trench capacitors. In the 2000s, manufacturers were sharply divided by the type of capacitor used in their DRAMs and the relative cost and long-term scalability of both designs have been the subject of extensive debate. The majority of DRAMs, from major manufactures such as Hynix , Micron Technology , Samsung Electronics use the stacked capacitor structure, whereas smaller manufacturers such Nanya Technology use
20550-526: The take-over completed in June 2015. It was later renamed Hanwha Techwin. The company was listed on the Korea Exchange stock-exchange (number 012450) Samsung Thales Co., Ltd. (until 2001 known as Samsung Thomson-CSF Co., Ltd .) was a joint venture between Samsung-Techwin and the France-based aerospace and defense company Thales . It was established in 1978 and is based in Seoul. Samsung's involvement
20700-453: The trench capacitor structure (Jacob, pp. 355–357). The capacitor in the stacked capacitor scheme is constructed above the surface of the substrate. The capacitor is constructed from an oxide-nitride-oxide (ONO) dielectric sandwiched in between two layers of polysilicon plates (the top plate is shared by all DRAM cells in an IC), and its shape can be a rectangle, a cylinder, or some other more complex shape. There are two basic variations of
20850-482: The wordline, is connected to the gate terminal of every access transistor in its row. The vertical bitline is connected to the source terminal of the transistors in its column. The lengths of the wordlines and bitlines are limited. The wordline length is limited by the desired performance of the array, since propagation time of the signal that must transverse the wordline is determined by the RC time constant . The bitline length
21000-472: The world's 13th and 36th largest construction companies). Other notable subsidiaries include Samsung Life Insurance (the world's 14th largest life insurance company), Samsung Everland (operator of Everland Resort , the oldest theme park in South Korea) and Cheil Worldwide (the world's 15th largest advertising agency, as measured by 2012 revenues). According to Samsung's founder, the meaning of
21150-569: The world's largest manufacturer of liquid-crystal display panels. Ten years later, Sony , which had not invested in large-size TFT-LCDs , contacted Samsung to cooperate, and, in 2006, S-LCD was established as a joint venture between Samsung and Sony in order to provide a stable supply of LCD panels for both manufacturers. S-LCD was owned by Samsung (50% plus one share) and Sony (50% minus one share) and operates its factories and facilities in Tanjung, South Korea. As of 26 December 2011, it
21300-405: Was announced that Samsung had acquired the stake of Sony in this joint venture. Compared to other major Korean companies, Samsung survived the 1997 Asian financial crisis relatively unharmed. However, Samsung Motor was sold to Renault at a significant loss. As of 2010, Renault Samsung is 80.1 per cent owned by Renault and 19.9 per cent owned by Samsung. Additionally, Samsung manufactured
21450-415: Was developed with partners, officially launched with the original Samsung Solstice line of devices and other derivatives in 2008, which was later developed into Samsung Galaxy line of devices including Notes, Edge and other products. In 2007, former Samsung chief lawyer Kim Yong Chul claimed that he was involved in bribing and fabricating evidence on behalf of the group's chairman, Lee Kun-hee , and
21600-440: Was formed in 2004, and Toshiba owns 51 per cent of its stock, while Samsung owns the remaining 49 per cent. Samsung Electronics is listed on the Korea Exchange stock market (number 005930). Samsung Biologics is a biopharmaceutical division of Samsung, founded in 2011. It has contract development and manufacturing (CDMO) services including drug substance and product manufacturing and bioanalytical testing services. The company
21750-431: Was generally described as "5-2-2-2" timing, as bursts of four reads within a page were common. When describing synchronous memory, timing is described by clock cycle counts separated by hyphens. These numbers represent t CL - t RCD - t RP - t RAS in multiples of the DRAM clock cycle time. Note that this is half of the data transfer rate when double data rate signaling is used. JEDEC standard PC3200 timing
21900-550: Was originally part of Samsung Group, separated in the 1990s from the Samsung Group along with CJ Group (Food/Chemicals/Entertainment/logistics), Hansol Group (Paper/Telecom), and the JoongAng Group (Media). Today these separated groups are independent and they are not part of or connected to the Samsung Group. One Hansol Group representative said, "Only people ignorant of the laws governing the business world could believe something so absurd", adding, "When Hansol separated from
22050-466: Was sold to Honeywell , Raytheon , Wang Laboratories , and others. The same year, Honeywell asked Intel to make a DRAM using a three-transistor cell that they had developed. This became the Intel 1102 in early 1970. However, the 1102 had many problems, prompting Intel to begin work on their own improved design, in secrecy to avoid conflict with Honeywell. This became the first commercially available DRAM,
22200-477: Was strongly motivated by economics, a major consideration for DRAM devices, especially commodity DRAMs. The minimization of DRAM cell area can produce a denser device and lower the cost per bit of storage. Starting in the mid-1980s, the capacitor was moved above or below the silicon substrate in order to meet these objectives. DRAM cells featuring capacitors above the substrate are referred to as stacked or folded plate capacitors. Those with capacitors buried beneath
22350-518: Was the world's largest mobile phone maker by unit sales in the first quarter of 2012, with a global market share of 25.4%. It was also the world's second-largest semiconductor maker by 2011 revenues (after Intel ). Steco is a joint venture established between Samsung Electronics and Japan's Toray Industries in 1995. Toshiba Samsung Storage Technology Corporation (TSST) is a joint venture between Samsung Electronics and Toshiba of Japan which specialises in optical disc drive manufacturing. TSST
22500-459: Was trying to create an alternative to SRAM which required six MOS transistors for each bit of data. While examining the characteristics of MOS technology, he found it was capable of building capacitors, and that storing a charge or no charge on the MOS capacitor could represent the 1 and 0 of a bit, while the MOS transistor could control writing the charge to the capacitor. This led to his development of
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